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IRFR6215IRN/a25200avai-150V Single P-Channel HEXFET Power MOSFET in a D-Pak package
IRFR6215PBFIRN/a300avai-150V Single P-Channel HEXFET Power MOSFET in a D-Pak package
IRFR6215TRIRN/a679avai-150V Single P-Channel HEXFET Power MOSFET in a D-Pak package


IRFR6215 ,-150V Single P-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFR6215PBF ,-150V Single P-Channel HEXFET Power MOSFET in a D-Pak packagePD - 91749IRFR/U6215PRELIMINARY®HEXFET Power MOSFETl P-ChannelDl 175°C Operating TemperatureV = -15 ..
IRFR6215TR ,-150V Single P-Channel HEXFET Power MOSFET in a D-Pak packageapplications. D-PAK I-PAKThe D-PAK is designed for surface mounting usingTO-252AA TO-251AAvapor ..
IRFR6215TRLPBF ,-150V Single P-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFR6215TRPBF , 175°C Operating Temperature
IRFR825TRPBF , ZERO VOLTAGE SWITCHING SMPS
ISL8490IP ,5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 Transceiversapplications not requiring Rx and Tx output disable functions (e.g., point-to-point). Half duplex c ..
ISL8491EIB ,+-15kV ESD protected, 5V, low power, high speed and slew rate limited, full duplex, RS-485/RS-422 transceiver.applications, so they are ideal for -250µA (ISL8491E)RS-422 networks requiring high ESD tolerance o ..
ISL8491EIBZ ,+-15kV ESD protected, 5V, low power, high speed and slew rate limited, full duplex, RS-485/RS-422 transceiver.FeaturesHigh Speed and Slew Rate Limited, Full • RS-485 I/O Pin ESD Protection . . . . . . . . . . ..
ISL8491IB ,5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 TransceiversApplicationsThe ISL8488 - 91 are configured for full duplex (separate Rx input and Tx output pins)
ISL8491IP ,5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 Transceiversapplications not requiring Rx and Tx output disable functions (e.g., point-to-point). Half duplex c ..
ISL8499IRZ-T ,Ultra Low ON-Resistance, +1.65V to +4.5V, Single Supply, Quad SPDT (Dual DPDT) Analog SwitchElectrical Specifications - 4.3V Supply Test Conditions: V+ = +3.9V to +4.5V, GND = 0V, V = 1.6V, V ..


IRFR6215-IRFR6215PBF-IRFR6215TR
-150V Single P-Channel HEXFET Power MOSFET in a D-Pak package
International
Tart, Rectifier
P-Channel
175°C Operating Temperature
Surface Mount (IRFR6215)
Straight Lead (IRFU6215)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectiher
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efhcient device for use in a wide
variety of applications.
PRELIMINARY
PD - 91749
IRFR/U62'15
HEXFET® Power MOSFET
VDSS = -150V
RDS(on) = 0.295n
ID = -13A
The D-PAK is designed for surface mounting using rllfth, T0-251AA
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V -13
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V -9.0 A
IDM Pulsed Drain Current C0© -44
Pro @Tc = 25°C Power Dissipation 110 W
Linear Derating Factor 0.71 W/°C
VGS Gate-to-Source Voltage i 20 V
EAS Single Pulse Avalanche Energy©© 310 mJ
IAR Avalanche Current0D© -6.6 A
EAR Repetitive Avalanche Energy0D© 11 m]
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
T J Operating Junction and -55 to + 175
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 1 .4
ReJA Junction-to-Ambient (PCB mount) ** - 50 "CA/V
RQJA Junction-to-Ambient - 1 10
1
5/11/98

IRFRIU6215 International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -150 - - V VGS = 0V, ID = -250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient - -0.20 - V/°C Reference to 25°C, ID = -1mA
. . . - - 0.295 Vss = -1OV, ID = -6.6A ©
Roam Static Drain-to-Source On-Resistance - - 0.58 n I/ss = -10V, ID = -6.6 A @TJ = 150°C
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V I/ns = VGs, ID = -250pA
gfs Forward Transconductance 3.6 - - S Vros = -50V, ID = -6.6AOD
loss Drain-to-Source Leakage Current - - 22550 pA 11:: "='" 128$ [it, , g, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A Vss = 20V
Gate-to-Source Reverse Leakage - - -100 I/ss = -20V
09 Total Gate Charge - - 66 ID = -6.6A
Qgs Gate-to-Source Charge - - 8.1 nC Vros = -120V
di Gate-to-Drain ("Miller") Charge - - 35 Vcs = -10V, See Fig. 6 and 13 ©©
td(on) Turn-On Delay Time - 14 - Voc, = -75V
t, Rise Time - 36 - ns ID = -6.6A
tam) Turn-Off Delay Time - 53 - Rs = 6.89
" Fall Time 37 RD = 129, See Fig. 10 (96)
. Between lead, D
Lo Internal Drain Inductance - 4.5 - nH 6mm (0. 25in.) )
from packa e G
Ls Internal Source Inductance - 7.5 - and center 2f die contacts S
Ciss Input Capacitance - 860 - VGS = 0V
Coss Output Capacitance - 220 - pF Vros = -25V
Crss Reverse Transfer Capacitance - 130 - f = 1.0MHz, See Fig. 5©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - -1 3 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) co© - - -44 p-n junction diode. s
I/so Diode Forward Voltage - - -1.6 V To = 25°C, Is = -6.6A, l/ss = 0V ©
tn Reverse Recovery Time - 160 240 ns To = 25°C, IF = -6.6A
Qrr Reverse RecoveryCharge - 1.2 1.7 pC di/dt = 100/Ups ©©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by L3+LD)
Notes:
OD Repetitive rating; pulse width limited by G) Pulse width 3 300ps; duty cycle 5 2%
max. junction temperature. (See fig. 11 )
© Starting TJ = 25°C, L = 14mH (S) This is applied for I-PAK, LS of D-PAK is measured between lead and
Rs = 259, 'As = -6.6A. (See Figure 12) center of die contact
© la, S-6.6A, di/dt S -620A/ps, VDD S V(BR)ross, © Uses IRF6215 data and test conditions
T J g 175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material )
For recommended footprint and soldering techniques refer to application note #AN-994
2

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