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IRFR48ZIRN/a25200avaiAUTOMOTIVE MOSFET


IRFR48Z ,AUTOMOTIVE MOSFETapplications.IRFR48Z IRFU48ZAbsolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Dra ..
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ISL8487EIP ,15kV ESD Protected/ 1/8 Unit Load/ 5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 TransceiversFeaturesLow Power, High Speed or Slew Rate • RS-485 I/O Pin ESD Protection . . . . . . . . . . . . ..
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ISL8488IP ,5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 Transceiversapplications. • Low Quiescent Current:-160µA (ISL8483, ISL8488, ISL8489)Data rates up to 5Mbps are ..


IRFR48Z
AUTOMOTIVE MOSFET
PD - 96924
International
TOR. Rectifier AUTOMOTIVE MOSFET
|RFR482
IRFU48Z
Features HEXFET® Power MOSFET
oAdvanced Process Technology
oUItra Low On-Resistance D
o175°C Operating Temperature VDSS = 55V
oFast Switching
oRepetitive Avalanche Allowed up to Tjmax ~ . RDS(on) = 1 1 mg
Description
Specifically designed for Automotive applications, ID = 42A
this HEXFET6 Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating 14it 1(,it
temperature, fast switching speed and improved Ri' l, V
repetitive avalanche rating . These features com- I.
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
D-Pak I-Pak
|RFR482 lfRFU48Z
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vas @ 10V (Silicon Limited) 62
ID @ To = 100°C Continuous Drain Current, Vas @ 10V 44 A
ID @ To = 25°C Continuous Drain Current, Vas @ 10V (Package Limited) 42
'DM Pulsed Drain Current co 250
PD @Tc = 25°C Power Dissipation 91 W
Linear Derating Factor 0.61 W/°C
VGS Gate-to-Source Voltage A 20 V
EAS(Therma|lyIImIted) Single Pulse Avalanche Energy© 74 mJ
EAS (Tested) Single Pulse Avalanche Energy Tested Value © 110
|AR Avalanche Current C) See Fig.12a,12b,15,16 A
EAR Repetitive Avalanche Energy s mJ
To Operating Junction and -55 to + 175
TSTS Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case - 1.64
ROJA Junction-to-Ambient (PCB mount) (3. - 40 °C/W
ReJA Junction-to-Ambient - 110
HEXFET® is a registered trademark of International Rectifier.
1
11/2/04
IRFR/U48Z
International
IEER Rectifier
Electrical Characteristics © T,, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V Ves = 0V, ID = 250pA
AVugmmss/ATJ Breakdown Voltage Temp. Coefficient - 0.054 - V/°C Reference to 25°C, ID = 1mA
Rrosom Static Drain-to-Source On-Resistance - 8.86 11 mn Vss = 10V, ID = 37A ©
Vesum Gate Threshold Voltage 2.0 - 4.0 V Vos = Vss, ID = 50pA
gfs Forward Transconductance 120 - - S Vos = 25V, ID = 37A
loss Drain-to-Source Leakage Current - - 20 pA l/ns = 55V, l/ss = 0V
--.- -- 250 Vos = 55V, Ves = 0V, T, = 125°C
less Gate-to-Source Forward Leakage - - 200 nA Ves = 20V
Gate-to-Source Reverse Leakage - - -200 Vss = -20V
a, Total Gate Charge - 40 60 ID = 37A
Qgs Gate-to-Source Charge - 11 - nC Vos = 44V
di Gate-to-Drain ("Miller") Charge - 15 - Ves = 10V s
td(on) Turn-On Delay Time - 15 - Vor, = 28V
t, Rise Time - 61 - ID = 37A
tum) Turn-Off Delay Time - 4O - ns Rs = 12 Q
t, Fall Time - 35 -- Vss = 10V 6)
LD Internal Drain Inductance - 4.5 - Between lead, A D
nH 6mm (0.25in.) {/‘5 é\
Ls Internal Source Inductance - 7.5 - from package 'Ir, /
and center of die contact s
Ciss Input Capacitance - 1720 - Vss = 0V
Coss Output Capacitance - 290 - Vrys = 25V
Crss Reverse Transfer Capacitance - 160 - pF f = 1.0MHz
Coss Output Capacitance - 1000 - Vas = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 230 - Vss = 0V, Vos = 44V, f = 1.0MHz
Cass eff. Effective Output Capacitance - 360 - Vss = 0V, Vos = 0V to 44V C)
Source-Drain Ratings and Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 37 MOSFET symbol D
(Body Diode) A showing the (r,
ISM Pulsed Source Current - - 250 integral reverse G c,
(Body Diode) CO p-n junction diode. q
VSD Diode Forward Voltage - - 1.3 V To = 25°C, Is = 37A, vss = 0V ©
trr Reverse Recovery Time - 20 40 ns T J = 25°C, IF = 37A, VDD = 28V
Qrr Reverse Recovery Charge - 14 28 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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