IRFR430B ,500V N-Channel MOSFETIRFR430B / IRFU430BNovember 2001IRFR430B / IRFU430B500V N-Channel MOSFET
IRFR430B ,500V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 3.5A, 500V, R = 1.5Ω @V = 10 VDS(on) ..
IRFR4620 ,200V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplications DV200VDSSHigh Efficiency Synchronous Rectification in SMPSR typ.Uninterruptible ..
IRFR4620TRLPBF ,200V Single N-Channel HEXFET Power MOSFET in a D-Pak package96207AIRFR4620PbFIRFU4620PbFHEXFET Power MOSFET
IRFR48Z ,AUTOMOTIVE MOSFETapplications.IRFR48Z IRFU48ZAbsolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Dra ..
IRFR48ZTRPBF ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.IRFR48ZPbF IRFU48ZPbFAbsolute Maximum RatingsParameter Max. UnitsContinuous Drain Curr ..
ISL8485EIP ,ESD Protected to 15kV/ 5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 Transceiversfeatures higher slew rates.• Three State Rx and Tx OutputsBoth devices present a “single unit load” ..
ISL8485IB ,5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 TransceiversISL8483, ISL8485, ISL8488,®ISL8489, ISL8490, ISL8491Data Sheet December 2003 FN6046.35V, Low Power, ..
ISL8485IB-T ,5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 TransceiversISL8483, ISL8485, ISL8488,®ISL8489, ISL8490, ISL8491Data Sheet December 2003 FN6046.35V, Low Power, ..
ISL8485IBZ , 5V, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers
ISL8485IP ,5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 TransceiversApplicationsThe ISL8488 - 91 are configured for full duplex (separate Rx input and Tx output pins)
ISL8487EIB ,15kV ESD Protected/ 1/8 Unit Load/ 5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 Transceiversapplications. Data rates up to (ISL8487E); LTC1487, ADM1487 (ISL81487L); 250kbps are achievable wit ..
IRFR430B
500V N-Channel MOSFET
IRFR430B / IRFU430B November 2001 IRFR430B / IRFU430B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.5A, 500V, R = 1.5Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 25 nC) planar, DMOS technology. • Low Crss ( typical 16 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge. D !!!!!!!! D ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● !!!!!!!! G ● ● ● ● ● ● ● ● I-PAK D-PAK GS IRFR Series IRFU Series GS D !!!!!!!! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter IRFR430B / IRFU430B Units V Drain-Source Voltage 500 V DSS I - Continuous (T = 25°C) Drain Current 3.5 A D C - Continuous (T = 100°C) 2.2 A C I (Note 1) Drain Current - Pulsed 14 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 270 mJ AS I Avalanche Current (Note 1) 3.5 A AR E (Note 1) Repetitive Avalanche Energy 4.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns Power Dissipation (T = 25°C) * 2.5 W P A D Power Dissipation (T = 25°C) 48 W C - Derate above 25°C 0.38 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J stg Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.6 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 50 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 110 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Rev. B, November 2001
