IRFU420BTU ,500V N-Channel B-FET / Substitute of IRFU420 & IRFU420AIRFR420B / IRFU420BNovember 2001IRFR420B / IRFU420B500V N-Channel MOSFET
IRFU420PBF ,500V Single N-Channel HEXFET Power MOSFET in a I-Pak packageapplications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount
IRFU430A ,500V Single N-Channel HEXFET Power MOSFET in a I-Pak packagePD - 94356ASMPS MOSFETIRFR430AIRFU430A
IRFU430APBF ,500V Single N-Channel HEXFET Power MOSFET in a I-Pak packagePD - 94356ASMPS MOSFETIRFR430AIRFU430A
IRFU430APBF ,500V Single N-Channel HEXFET Power MOSFET in a I-Pak packageApplications ®HEXFET Power MOSFET Switch Mode Power Supply (SMPS) Uninterruptible Power SupplyV R ..
IRFU4615PBF ,150V Single N-Channel HEXFET Power MOSFET in a I-Pak packageApplicationsHigh Efficiency Synchronous Rectification in SMPSR typ.34m
IRFR420BTM-IRFU420BTU
500V N-Channel B-FET / Substitute of IRFR420 & IRFR420A
IRFR420B / IRFU420B November 2001 IRFR420B / IRFU420B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.3A, 500V, R = 2.6Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 14 nC) planar, DMOS technology. • Low Crss ( typical 10 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge. D !!!!!!!! D ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● !!!!!!!! G ● ● ● ● ● ● ● ● I-PAK D-PAK GS IRFR Series IRFU Series GS D !!!!!!!! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter IRFR420B / IRFU420B Units V Drain-Source Voltage 500 V DSS I - Continuous (T = 25°C) Drain Current 2.3 A D C - Continuous (T = 100°C) 1.5 A C I (Note 1) Drain Current - Pulsed 8.0 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 200 mJ AS I Avalanche Current (Note 1) 2.3 A AR E (Note 1) Repetitive Avalanche Energy 4.1 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns Power Dissipation (T = 25°C) * 2.5 W P A D Power Dissipation (T = 25°C) 41 W C - Derate above 25°C 0.33 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J stg Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 3.05 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 50 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 110 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Rev. B, November 2001
