IC Phoenix
 
Home ›  II32 > IRFR3711ZCPBF,20V Single N-Channel HEXFET Power MOSFET in a D-Pak package
IRFR3711ZCPBF Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
IRFR3711ZCPBFIRN/a10000avai20V Single N-Channel HEXFET Power MOSFET in a D-Pak package


IRFR3711ZCPBF ,20V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplications HEXFET Power MOSFET High Frequency Synchronous BuckV R max Converters for Compute ..
IRFR3711ZPBF ,20V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsHEXFET Power MOSFET High Frequency Synchronous Buck Converters for Computer Proces ..
IRFR3711ZTR ,20V Single N-Channel HEXFET Power MOSFET in a D-Pak package IRFR3711ZIRFU3711Z
IRFR3711ZTRL , High Frequency Synchronous Buck Converters for Computer Processor Power
IRFR3806 ,60V Single N-Channel HEXFET Power MOSFET in a D-Pak packageIRFR3806PbFIRFU3806PbF
IRFR3806TRPBF ,60V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsHigh Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETUninterruptibl ..
ISL84543IB ,Low-Voltage/ Single Supply/ Dual SPST/ SPDT Analog SwitchesApplicationsand ISL43210 datasheet.• Battery Powered, Handheld, and Portable EquipmentTABLE 1.
ISL84543IB ,Low-Voltage/ Single Supply/ Dual SPST/ SPDT Analog Switchesapplications.• Available in SOT-23 PackagingTable 1 summarizes the performance of this family. For ..
ISL84543IB ,Low-Voltage/ Single Supply/ Dual SPST/ SPDT Analog Switchesapplications include battery powered • Pin Compatible with MAX323 - MAX325equipment that benefit fr ..
ISL84543IH-T ,Low-Voltage/ Single Supply/ Dual SPST/ SPDT Analog Switchesapplications include battery powered • Pin Compatible with MAX323 - MAX325equipment that benefit fr ..
ISL84543IP ,Low-Voltage/ Single Supply/ Dual SPST/ SPDT Analog SwitchesFeaturesSPDT Analog Switches• Drop-in Replacements for MAX4541 - MAX4544, The Intersil ISL84541–ISL ..
ISL84544CB ,Low-Voltage/ Single Supply/ Dual SPST/ SPDT Analog SwitchesApplicationsand ISL43210 datasheet.• Battery Powered, Handheld, and Portable EquipmentTABLE 1.


IRFR3711ZCPBF
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
ISER Rectifier
PD - 96050
IRFR3711ZCPbF
lRFU3711ZCPbF
Applications HEXFET© Power MOSFET
0 High Frequency Synchronous Buck
Converters for Computer Processor Power Voss RDS(on) max 09
o High Frequency Isolated DC-DC 20V 5.7mf2 18nC
Converters with Synchronous Rectification
for Telecom and Industrial Use
o Lead-Free
tiii)), 4i,itt
Benefits l,
o Very Low RDS(on) at 4.5V VGS
o Ultra-Low Gate Impedance D-Pak l-Pak
. Fully Characterized Avalanche Voltage IRFR3711ZCPbF IRFU3711ZCPbF
and Current
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 20 V
VGS Gate-to-Source Voltage i 20
ID @ Tc = 25°C Continuous Drain Current, Vss @ 10V 93©
ID @ Tc = 100°C Continuous Drain Current, Ves @ 10V 66© A
IDM Pulsed Drain Current (D 370
PD @Tc = 25°C Maximum Power Dissipation © 79 W
Pro @Tc = 100°C Maximum Power Dissipation © 39
Linear Derating Factor 0.53 W/°C
To Operating Junction and -55 to + 175 °C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case - 1 .9
ROJA Junction-to-Ambient (PCB Mount) s - 50 "C/W
ROJA Junction-to-Ambient - 110
Notes OD through S are on page 11
1
02/23/06
http://www.datas
heetcataloa.Com/
IRFR/U3711ZCPbF International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 20 - - V Vss = 0V, ID = 250pA
ABN/oss/AT: Breakdown Voltage Temp. Coefficient - 13 - mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 4.5 5.7 mn I/cs = 10V, ID = 15A 6)
- 6.2 7.8 Vss = 4.5V, ID = 12A ©
VGS(th) Gate Threshold Voltage 1.55 2.0 2.45 V Vos = VGS, ID = 250pA
AVGS(m)/ATJ Gate Threshold Voltage Coefficient - -5.4 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Ws = 16V, I/ss = 0V
- - 150 Vos = 16V, VGS = OV, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA I/cs = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
gfs Forward Transconductance 48 - - S Vos = 10V, ID = 12A
09 Total Gate Charge - 18 27
0951 Pre-Vth Gate-to-Source Charge - 5.1 - Ws = 10V
0952 Post-Vth Gate-to-Source Charge - 1.8 - nC I/ss = 4.5V
the Gate-to-Drain Charge - 6.5 - ID = 12A
ngdr Gate Charge Overdrive - 4.6 - See Fig. 16
st Switch Charge (0952 + di) - 8.3 -
Qoss Output Charge - 9.8 - nC Vos = 10V, VGs = 0V
tam) Turn-On Delay Time - 12 - VDD = 15V, Vss = 4.5V©
t, Rise Time - 13 - ID = 12A
lam) Turn-Off Delay Time - 15 - ns Clamped Inductive Load
" Fall Time - 5.2 -
Ciss Input Capacitance - 2160 - Vss = 0V
Coss Output Capacitance - 700 - pF Vos = 10V
Crss Reverse Transfer Capacitance - 360 - f = 1.0MHz
Avalanche Characteristics
Parameter . Max.
ngle Pulse Avalanche Energy
va nt 1 2
nergy 7. 9
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 9330 MOSFET symbol D
(Body Diode) A showing the L,-,--,
ISM Pulsed Source Current - - 370 integral reverse G (rd,
(Body Diode) C) p-njunction diode. a
I/so Diode Forward Voltage - - 1.0 v T J = 25''C, ls = 12A, VGS = 0v ©
t, Reverse Recovery Time - 19 28 ns T: = 25°C, IF = 12A, VDD = 10V
er Reverse Recovery Charge - 9.4 14 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2

ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED