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IRFR3710ZTRLPBF
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 95513D
Internahqrjol lF1FR3710ZPbF
ISBR Rectifier lRFU3710ZPbF
Features lRFU3710Z-701PbF
. Advanced Process Technology HEXFET6 Power MOSFET
q Ultra Low On-Resistance D
q 175°C OperatmgTemperature VDSS = 100V
. Fast Switching
o Repetitive Avalanche Allowed up to ijax
o Multiple Package Options G RDS(on) = 18mQ
. Lead-Free
Description s ID = 42A
This HEXFET® Power MOSFET utilizes the
latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional 14iit, (iii)
features of this design are a 175°C junction Ri' l, R'ls'
operating temperature, fast switching speed and I.
improved repetitive avalanche rating . These D-Pak I-Pak '
feteretcom.bintt rHk.etisdtsign an .extrem.e.ly IRFR3710ZPbF IRFU3710ZPbF
efficient and reliable device for use In a wide l-Pak Leadform 701
variety of applications. IRFU371OZ-701PbF
Refer to page 11 for package outline
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Vas @ 10V (Silicon Limited) 56
ID @ To = 100°C Continuous Drain Current, l/ss @ 10V 39 A
ID @ To = 25°C Continuous Drain Current, l/ss @ 10V (Package Limited) 42
IBM Pulsed Drain Current (D 220
PD @T0 = 25°C Power Dissipation 140 W
Linear Derating Factor 0.95 W/°C
Vas Gate-to-Source Voltage t 20 V
EAS(rhermawirnited) Single Pulse Avalanche Energy© 150 md
EAs(Tested ) Single Pulse Avalanche Energy Tested Value © 200
IAR Avalanche Current C) See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy (9 mJ
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 1.05
ReJA Junction-to-Ambient (PCB mount) © - 50 °C/W
RQJA Junction-to-Ambient - 110
HEXFETQ is a registered trademark of International Rectifier.
1
09/27/10
IRFR/U3710ZPbF & IRFU3710Z-701PbF
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V Vas = 0V, ID = 250uA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.088 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 15 18 mf2 Vos = 10V, ID = 33A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 v Vos = Vas, ID = 250pA
gfs Forward Transconductance 39 - - S Vos = 25V, ID = 33A
loss Drain-to-Source Leakage Current - - 20 PA Vos = 100V, Vas = 0V
-- -- 250 VDs = 100V, Vss = 0V, T: = 125°C
less Gate-to-Source Forward Leakage - - 200 nA Vos = 20V
Gate-to-Source Reverse Leakage - - -200 Ves = -20V
th Total Gate Charge - 69 100 ID = 33A
As Gate-to-Source Charge - 15 - nC Vos = 80V
di Gate-to-Drain ("Miller") Charge -- 25 -- Vss = 10V OD
td(on) Turn-On Delay Time - 14 - VDD = 50V
t, Rise Time - 43 - ID = 33A
tam) Turn-Off Delay Time - 53 - ns Rs = 6.8 Q
t, Fall Time - 42 - Vss = 10V ©
Lo Internal Drain Inductance -- 4.5 -- Between lead,
nH 6mm (0.25in.)
Ls Internal Source Inductance - 7.5 - from package
and center of die contact
Ciss Input Capacitance - 2930 - Vss = ov
Coss Output Capacitance -- 290 -- l/rss = 25V
Crss Reverse Transfer Capacitance - 180 - pF f = 1.0MHz
Coss Output Capacitance - 1200 - Vas = OV, Vros = 1.0V, f = 1.0MHz
Coss Output Capacitance - 180 - Vas = 0V, Vros = 80V, f = 1.0MH2
Coss eff. Effective Output Capacitance - 430 - Vss = 0V, Vrrs = 0V to 80V ©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 56 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current -- -- 220 integral reverse G
(Body Diode) (D p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 33A, Vas = 0V ©
trr Reverse Recovery Time - 35 53 ns To = 25°C, IF = 33A, VDD = 50V
Qrr Reverse Recovery Charge - 41 62 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
