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IRFR3709ZCTRPBFIR进口N/a26500avai30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
IRFR3709ZCTRPBFIRN/a31204avai30V Single N-Channel HEXFET Power MOSFET in a D-Pak package


IRFR3709ZCTRPBF ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsHEXFET Power MOSFET High Frequency Synchronous BuckV R maxQg Converters for Comput ..
IRFR3709ZCTRPBF ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packageIRFR3709ZCPbFIRFU3709ZCPbF
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ISL84516IB ,Low-Voltage/ Dual Supply/ SPST/ Analog SwitchesApplicationsISL84516 ISL84517• Battery Powered, Handheld, and Portable EquipmentNumber of Switches ..
ISL84517IB ,Low-Voltage/ Dual Supply/ SPST/ Analog Switchesapplications include battery powered • Dual Supply Operation . . . . . . . . . . . . . . . . . . . ..
ISL84521IB ,Low-Voltage/ Single and Dual Supply/ Quad SPST/ Analog SwitchesFeaturesQuad SPST, Analog Switches• Drop-in Replacements for MAX4521 - MAX4523The Intersil ISL84521 ..
ISL84521IV ,Low-Voltage/ Single and Dual Supply/ Quad SPST/ Analog SwitchesFEATURES AT A GLANCE- PagersISL84521 ISL84522 ISL84523- Laptops, Notebooks, PalmtopsNumber of Switc ..
ISL84522IB ,Low-Voltage/ Single and Dual Supply/ Quad SPST/ Analog SwitchesApplicationsNo-Lead Flatpack (QFN) package see the ISL43140, • Battery Powered, Handheld, and Porta ..
ISL84522IB ,Low-Voltage/ Single and Dual Supply/ Quad SPST/ Analog SwitchesFEATURES AT A GLANCE- PagersISL84521 ISL84522 ISL84523- Laptops, Notebooks, PalmtopsNumber of Switc ..


IRFR3709ZCTRPBF
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
ISER Rectifier
Applications
o High Frequency Synchronous Buck
Converters for Computer Processor Power
q High Frequency Isolated DC-DC
Converters with Synchronous ReCtiMation
for Telecom and Industrial Use
0 Lead-Free
Benefits
. Very Low RDS(0n) at 4.5V VGS
o Ultra-Low Gate Impedance
0 Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
PD - 96046
R3709ZCPbF
IRFU3709ZCPbF
HEXFET© Power MOSFET
Voss RDS(on) max Ctg
30V 6.5mf2 17nC
14iit, 4si,i,))
Ri'' l,
D-Pak l-Pak
IRFR3709ZCPbF IRFU3709ZCPbF
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage i 20
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 8609 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 61 ©
IDM Pulsed Drain Current C) 340
PD @Tc = 25°C Maximum Power Dissipation 79 W
Pro @Tc = 100°C Maximum Power Dissipation 39
Linear Derating Factor 0.53 W/''C
TJ Operating Junction and -55 to + 175 ''C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case - 1.9 ''C/W
ROJA Junction-to-Ambient (PCB Mount) Co - 50
RNA Junction-to-Ambient - 1 10
Notes OD through S are on page 11
1
04/20/06

IRFR/U3709ZCPbF International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V Vss = 0V, ID = 250pA
ABN/oss/AT: Breakdown Voltage Temp. Coefficient - 22 - mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 5.2 6.5 mn I/ss = 10V, ID = 15A Cs)
- 6.5 8.2 Vss = 4.5V, ID = 12A OD
Vesnn) Gate Threshold Voltage 1.35 1.80 2.25 V Ws = VGS, b = 250PA
AVGS(th)/ATJ Gate Threshold Voltage Coefficient - -5.6 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Ws = 24V, Vss = 0V
- - 150 I/ns = 24V, VGS = 0V, T: = 150°C
less Gate-to-Source Forward Leakage - - 100 nA I/ss = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
gfs Forward Transconductance 51 - - S Ws = 15V, ID = 12A
09 Total Gate Charge - 17 26
0951 Pre-Vth Gate-to-Source Charge - 4.7 - Vros = 15V
0952 Post-Vth Gate-to-Source Charge - 1.6 - nC I/ss = 4.5V
the Gate-to-Drain Charge - 5.7 - lo = 12A
ngdr Gate Charge Overdrive - 5.0 - See Fig. 16
st Switch Charge (0952 + di) - 7.3 -
Qoss Output Charge - 10 - nC Vos = 16V, VGs = 0V
td(on) Turn-On Delay Time - 12 - VDD = 16V, Vss = 4.5V ©
t, Rise Time - 12 - ID = 12A
1am) Turn-Off Delay Time - 15 - ns Clamped Inductive Load
tr Fall Time - 3.9 -
Ciss Input Capacitance - 2330 - I/ss = 0V
Coss Output Capacitance - 460 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 230 - f = 1.0MHz
Avalanche Characteristics
Parameter . Max.
EAS ngle Pulse Avalanche Energy 100
|AR va urrent 12
EAR an nergy 7.9
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 8630 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 340 integral reverse G
(Body Diode) C) p-n junction diode. S
Vso Diode Forward Voltage - - 1.0 v T J = 25°C, ls = 12A, VGS = OV ©
trr Reverse Recovery Time - 29 44 ns Tu = 25°C, IF = 12A, VDD = 15V
er Reverse Recovery Charge - 25 37 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2

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