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IRFR3707ZPBFIRN/a144avai30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
IRFR3707ZTRRPBFIRN/a34375avai30V Single N-Channel HEXFET Power MOSFET in a D-Pak package


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IRFR3707ZPBF-IRFR3707ZTRRPBF
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
ISER Rectifier
Applications
0 High Frequency Synchronous Buck
Converters for Computer Processor Power
PD - 95443B
IlRFR3707ZPbF
IRFU3707ZPbF
HEXFET© Power MOSFET
q High Frequency Isolated DC-DC VDSS RDS(on) max tilg
Converters with Synchronous Rectification 30V 9dimf2 9.6nC
for Telecom and Industrial Use
q Lead-Free
Benefits 14it 4ii,it
0 Very Low RDS(on) at 4.5V VGS Ri'' t
o Ultra-Low Gate Impedance l,
o Fully Characterized Avalanche Voltage D P k I P k
and Current IRFR37072PbF |RFU37§7ZPbF
Absolute Maximum Ratings
Parameter Max. Units
l/rss Drain-to-Source Voltage 30 V
l/ss Gate-to-Source Voltage i 20
ID @ To = 25°C Continuous Drain Current, Vss @ 10V 5669 A
ID @ To = 100°C Continuous Drain Current, Vas @ 10V 39©
IDM Pulsed Drain Current C) 220
PD @Tc = 25°C Maximum Power Dissipation 50 W
PD @Tc = 100°C Maximum Power Dissipation 25
Linear Derating Factor 0.33 W/°C
TJ Operating Junction and -55 to + 175 "C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case - 3.0 °C/W
ROJA Junction-to-Ambient (PCB Mount) © - 50
ROJA Junction-to-Ambient - 110
Notes OD through S are on page 11
1
05/14/08

IRFR/U3707ZPbF
International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V I/ss = 0V, ID = 250pA
ABN/oss/AT: Breakdown Voltage Temp. Coefficient - 0.023 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 7.5 9.5 mf2 Vas = 10V, b = 15A ©
- 10 12.5 Vas = 4.5V, ID = 12A ©
VGS(th) Gate Threshold Voltage 1.35 1.80 2.25 V Vos = Vas, ID = 25pA
AVGS(th)/ATJ Gate Threshold Voltage Coefficient - -5.0 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA VDS = 24V, Vas = 0V
- - 150 l/rs = 24V, Vas = OV, T, = 125°C
less Gate-to-Source Forward Leakage -- -- 100 nA Vss = 20V
Gate-to-Source Reverse Leakage -- -- -100 Vss = -20V
gfs Forward Transconductance 71 - - S Vos = 15V, ID = 12A
09 Total Gate Charge - 9.6 14
0951 Pre-Vth Gate-to-Source Charge - 2.6 - Vos = 15V
Qgsz Post-Vth Gate-to-Source Charge - 0.90 - nC Vas = 4.5V
di Gate-to-Drain Charge - 3.5 - ID = 12A
ngdr Gate Charge Overdrive - 2.6 - See Fig. 16
st Switch Charge (0952 + di) - 4.4 -
Qoss Output Charge - 5.8 - nC Vos = 15V, Vss = ov
tum) Turn-On Delay Time - 8.0 - VDD = 16V, Vss = 4.5V ©
t, Rise Time - 11 - ID =12A
tum Turn-Off Delay Time -- 12 -- ns Clamped Inductive Load
tf Fall Time -- 3.3 --
Ciss Input Capacitance - 1150 -- Vss = 0V
Coss Output Capacitance - 260 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 120 - f = 1.0MHz
Avalanche Characteristics
Parameter
ng va e
e rre nt
e nergy
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 56© MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 220 integral reverse G
(Body Diode) co p-n junction diode. S
Vso Diode Forward Voltage - - 1.0 V TJ = 25°C, ls = 12A, VGS = 0V ©
tn Reverse Recovery Time -- 25 38 ns TJ = 25°C, IF = 12A, vDD = 15V
er Reverse Recovery Charge -- 17 26 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2

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