IRFR3303 ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFR3303PBF ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packagePD - 9.1642AIRFR/U3303®HEXFET Power MOSFETl Ultra Low On-ResistanceDl Surface Mount (IRFR3303)V = 3 ..
IRFR3303TR ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFR3303TRL ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packagePD - 9.1642AIRFR/U3303®HEXFET Power MOSFETl Ultra Low On-ResistanceDl Surface Mount (IRFR3303)V = 3 ..
IRFR330BTM ,400V N-Channel B-FET / Substitute of IRFR330AFeaturesThese N-Channel enhancement mode power field effect • 4.5A, 400V, R = 1.0Ω @V = 10 VDS(on) ..
IRFR3410 ,100V Single N-Channel HEXFET Power MOSFET in a D-Pak package IRFR3410 IRFU3410HEXFET Power MOSFET
ISL83384EIA ,15kV ESD Protected/ +3V to +5.5V/ 1 Microamp/ 250Kbps/ RS-232 Transmitter/ReceiverFEATURESNO. OF DATA MANUAL AUTOMATICPART NO. OF NO. OF MONITOR Rx. RATE Rx. ENABLE READY POWER- POW ..
ISL83385ECA ,15kV ESD Protected/ +3V to +5.5V/ +/-1 Microamp/ 250kbps/ RS-232 Transmitters/ReceiversISL83385ETMData Sheet January 2001 File Number 600115kV ESD Protected, +3V to +5.5V,
ISL83385ECB ,15kV ESD Protected/ +3V to +5.5V/ +/-1 Microamp/ 250kbps/ RS-232 Transmitters/Receiversfeatures of the ISL83385E, whileApplication Note AN9863 summarizes the
ISL83385EIA ,15kV ESD Protected/ +3V to +5.5V/ +/-1 Microamp/ 250kbps/ RS-232 Transmitters/ReceiversISL83385ETMData Sheet January 2001 File Number 600115kV ESD Protected, +3V to +5.5V,
ISL83385EIB ,15kV ESD Protected/ +3V to +5.5V/ +/-1 Microamp/ 250kbps/ RS-232 Transmitters/Receiversfeatures of each• Any System Requiring RS-232 Communication Portsdevice comprising the 3V RS-232 fa ..
ISL83386EIV ,15kV ESD Protected/ +3V to +5.5V/ 1 Microamp/ 250kbps/ RS-232 Transmitters/Receivers with Separate Logic Supplyapplications are PDAs, Palmtops, and cell phones where the Meets EIA/TIA-232 and V.28/V .24 Speci ..
IRFR3303-IRFR3303PBF-IRFR3303TR-IRFR3303TRL-IRFU3303
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 9.1642A
IRFR/U3303
HEXFET® Power MOSFET
International
TOR, Rectifier
Ultra Low On-Resistance
Surface Mount (IRFR3303) D
Straight Lead (IRFU3033)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
VDSS = 30V
RDS(0n) = 0.0319
ID = 33AS
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety ofapplications.
D-Pak I-Pak
The D-Pak is designed for surface mounting using vapor T0-252AA T0-251AA
phase, infrared, orwave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, I/ss @ 10V 33©
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 216) A
IDM Pulsed Drain Current co 120
Pro @Tc = 25°C Power Dissipation 57 W
Linear Derating Factor 0.45 W/°C
I/ss Gate-to-Source Voltage i 20 V
EAS Single Pulse Avalanche Energy© 95 mJ
IAR Avalanche Current0) 18 A
EAR Repetitive Avalanche Energy(0 5.7 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
Tu Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Rac Junction-to-Case - 2.2
ReJA Junction-to-Ambient (PCB mount)" - 50 "C/W
ReJA Junction-to-Ambient - 1 10
8/25/97
IRFR/U3303 International
ISER Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V VGS = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.032 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0.031 f2 VGs = 10V, ID = 18A G)
Vngh) Gate Threshold Voltage 2.0 - 4.0 V VDs = l/ss, ID = 250pA
git Forward Transconductance 9.3 - - S VDs = 25V, ID = 18A
loss Drain-to-Source Leakage Current - - 25 PA VDS = 30V, VGS = 0V
- - 250 VDs = 24V, VGS = 0V, Tu = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGs = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
Qg Total Gate Charge - - 29 ID = 18A
Qgs Gate-to-Source Charge - - 7.3 nC VDS = 24V
di Gate-to-Drain ("Miller") Charge - - 13 VGS = 10V, See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 11 - VDD = 15V
tr Rise Time - 99 - ns ID = 18A
tam) Turn-Off Delay Time - 16 - R9 = 139
tr Fall Time - 28 - RD = 0.89, See Fig. 10 GD
. Between lead, D
LD Internal Drain Inductance - 4.5 - .
nH 6mm (0.25in.) Q: )
Ls Internal Source Inductance -- 7 5 - from package G
. and center of die contact© s
Ciss Input Capacitance - 750 - VGs = 0V
Coss Output Capacitance - 400 - pF VDS = 25V
Crss Reverse Transfer Capacitance - 140 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 336) A showing the '—,-
ISM Pulsed Source Current - - 120 integral reverse G Dix
(Body Diode) CO p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 18A, VGS = 0V ©
trr Reverse Recovery Time - 53 80 ns T: = 25°C, IF = 18A
Qrr Reverse RecoveryCharge - 94 140 nC di/dt = 100A/ps 64)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by Ls+LD)
Notes:
co Repetitive rating; pulse width limited by © Pulse width f 300ps; duty cycle f 2%.
max. junction temperature. ( See fig. 11 )
© Starting To = 25°C, L = 590pH s Caculated continuous current based on maximum allowable junction
Rs = 259, 'As = 18A. (See Figure 12) temperature; Package limitation current = 20A.
© lsro f le,: di/dt S 140/Ups, V00 f V(BR)DSS, © This is applied for l-PAK, Ls of D-PAK is measured between
T: f 150 C lead and center of die contact
** When mounted on 1" square PCB (FR-4 or G-IO Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
