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IRFR2905Z ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. IRFR2905Z IRFU2905ZAbsolute Maximum RatingsParameter Max. UnitsContinuous Drain Curre ..
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ISL83078EIBZA , ±15kV ESD Protected, 3.3V, Full Fail-safe, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers
ISL83083EIBZ-T , -15kV ESD Protected, 5V, Full Fail-Safe, Fractional (1/8) Unit Load, RS-485/RS-422 Transceivers
ISL83085EIBZ-T , -15kV ESD Protected, 5V, Full Fail-Safe, Fractional (1/8) Unit Load, RS-485/RS-422 Transceivers
ISL83085EIBZ-T , -15kV ESD Protected, 5V, Full Fail-Safe, Fractional (1/8) Unit Load, RS-485/RS-422 Transceivers
ISL83088EIBZ , -15kV ESD Protected, 5V, Full Fail-Safe, Fractional (1/8) Unit Load, RS-485/RS-422 Transceivers
ISL83088EIUZ , -15kV ESD Protected, 5V, Full Fail-Safe, Fractional (1/8) Unit Load, RS-485/RS-422 Transceivers
IRFR2905
AUTOMOTIVE MOSFET
PD - 95811
International
. . IRFR2905Z
Tait Rectlltler AUTOMOTIVE MOSFET IRFU2905Z
HEXFET© Power MOSFET
Features D
o Advanced Process Technology VDSS = 55V
. Ultra Low On-Resistance
. 175°C Operating Temperature
. Fast Switching G ' A RDS(on) = 14.5mQ
o Repetitive Avalanche Allowed up to Tjmax
s ID = 42A
Description
Specifically designed for Automotive applications, this HEXFET©
Power MOSFET utilizes the latest processing techniques to " iii)
achieve extremely low on-resistance per silicon area. Additional 'N " l '",
features of this design are a 175°C junction operating tempera- l, f
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and D-Pak I-Pak
a wide variety of other applications. IRFR29052 IRFU2905Z
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 59
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 42 A
ID @ To = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) 42
G, Pulsed Dram Current (D 240
PD @Tc = 25°C Power Dissipation 110 W
Linear Derating Factor 0.72 W/°C
VGs Gate-to-Source Voltage i 20 V
EAS(Thermally|imited) Single Pulse Avalanche Energy© 55 m J
EAS(Tested ) Single Pulse Avalanche Energy Tested Value © 82
IAR Avalanche Current OJ See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy (9 m J
T: Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, tor 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbf-in (1 .1N°m)
Thermal Resistance
Parameter . Max.
ROJC 1.38
RoJA mou 40
ROJA 1 10
HEXFET6 is a registered trademark of International Rectifier.
1
1 1/24/03
IRFR/U2905Z
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V I/ss = 0V, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.053 - VI°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 11.1 14.5 mn VGS = 10V, ID = 36A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGS, ID = 250pA
gts Forward Transconductance 20 - - S Ws = 25V, ID = 36A
loss Drain-to-Source Leakage Current - - 20 pA VDS = 55V, VGS = 0V
- - 250 Ws = 55V, VGS = 0V, T, = 125°C
less Gate-to-Source Forward Leakage - - 200 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -200 I/ss = -20V
q, Total Gate Charge - 29 44 ID = 36A
As Gate-to-Source Charge - 7.7 - nC Ws = 44V
di Gate-to-Drain ("Miller") Charge - 12 - VGS = 10V ©
Re Gate Input Resistance - 1.3 - Q f= 1MHz, open drain
td(on) Turn-On Delay Time - 14 - VDD = 28V
t, Rise Time - 66 - ID = 36A
1mm Turn-Off Delay Time - 31 - ns Rs = 15 Q
tr Fall Time - 35 - VGS = 10V ©
LD Internal Drain Inductance - 4.5 -- Between lead, D
nH 6mm (0.25in.) (L1
Ls Internal Source Inductance - 7.5 - from package 91C /
and center of die contact s
Ciss Input Capacitance - 1380 - VGs = 0V
Coss Output Capacitance - 240 - I/os = 25V
Crss Reverse Transfer Capacitance - 120 - pF f = 1.0MHz
Coss Output Capacitance - 820 - Vas = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 190 - VGS = 0V, Vos = 44V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 300 - VGS = 0V, Vos = 0V to 44V (9
Source-Drain Ratings and Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 36 MOSFET symbol A D
(Body Diode) A showing the Lt
ISM Pulsed Source Current - - 240 integral reverse a E
(Body Diode) (D p-n junction diode. e
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 36A, VGs = 0V ©
trr Reverse Recovery Time - 23 35 ns T J = 25''C, IF = 36A, VDD = 28V
Qrr Reverse Recovery Charge - 16 24 nC di/dt = 100/Ups ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by LS+LD)
