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IRFR2607ZIRN/a25200avai75V Single N-Channel HEXFET Power MOSFET in a D-Pak package
IRFR2607ZTRPBFIRN/a30000avai75V Single N-Channel HEXFET Power MOSFET in a D-Pak package


IRFR2607ZTRPBF ,75V Single N-Channel HEXFET Power MOSFET in a D-Pak packageFeatures®HEXFET Power MOSFET

IRFR2607Z-IRFR2607ZTRPBF
75V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 95953A
':iifi"p),i,(prie,l lRFR2607ZPbF
- IRFU2607ZPbF
Features
Advanced Process Technology HEXFET® Power MOSFET
Ultra Low On-Resistance D
175°C Operating Temperature VDSS = 75V
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free G
A RDS(0n) = 22mQ
Description ID = 42A
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance persilicon area. Additional features
of this design are a 175°C junction operating git) 4it
temperature, fast switching speed and improved 's,,'' t. _
repetitiveavalancherating.Thesefeaturescombine l
to make this design an extremely efficient and
relit.a.blt. device for use In a wide variety of D-Pak I-Pak
applications. IRFR2607ZPbF IRFU2607ZPbF
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Ves @ 10V (Silicon Limited) 45
ID @ To = 100°C Continuous Drain Current, Vas @ 10V 32 A
ID @ To = 25°C Continuous Drain Current, Vss © 10V (Package Limited) 42
IDM Pulsed Drain Current 6) 180
PD ©Tc = 25°C Power Dissipation 110 W
Linear Derating Factor 0.72 W/°C
l/tss Gate-to-Source Voltage t 20 V
EAS(Thermallylimi1ed) Single Pulse Avalanche Energy© 96 mJ
EAS (Tested ) Single Pulse Avalanche Energy Tested Value © 96
|AR Avalanche Current (D See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy s mJ
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range I
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1.1N'm)
Thermal Resistance
Parameter Typ. Max. Units
fur: Junction-to-Case - 1.38
ROJA Junction-to-Ambient (PCB mount) coco -- 40 0cm
Fu, Junction-to-Ambient _ 110
1
09/16/10

IRFR/U2607ZPbF
International
TOR Rectifier
Electrical Characteristics © T, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 75 - - V Vss = 0V, ID = 250uA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.074 - V/°C Reference to 25°C, ID = 1mA
RDSM) Static Drain-to-Source On-Resistance - 17.6 22 mn Vas = 10V, ID = 30A ©
Vegan) Gate Threshold Voltage 2.0 - 4.0 V VDS = Vas, ID = 50PA
gfs Forward Transconductance 36 --- -- S Vos = 25V, ID = 30A
loss Drain-to-Source Leakage Current - - 20 pA Vos = 75V, Vas = 0V
- - 250 Vrrs = 75V, Vss = OV, To = 125°C
less Gate-to-Source Forward Leakage -- -- 200 nA Ves = 20V
Gate-to-Source Reverse Leakage - - -200 Ves = -20V
% Total Gate Charge - 34 51 ID = 30A
Qgs Gate-to-Source Charge -- 8.9 -- nC Vos = 60V
di Gate-to-Drain ("Miller") Charge - 14 - Ves = 10V ©
tom Turn-On Delay Time - 14 - VDD = 38V
t, Rise Time -- 59 -- ID = 30A
td(off) Turn-Off Delay Time - 39 - ns Ra = 15 Q
t, Fall Time - 28 - Vas = 10V ©
LD Internal Drain Inductance -- 4.5 -- Between lead,
nH 6mm (0.25in.)
Ls Internal Source Inductance - 7.5 - from package
and center of die contact
Ciss Input Capacitance - 1440 - Vss = 0V
Coss Output Capacitance - 190 - VDS = 25V
Crss Reverse Transfer Capacitance -- 110 -- pF f = 1.0MHz
Coss Output Capacitance - 720 - Vas = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 130 - Vas = 0V, Vros = 60V, f = 1.0MHz
Coss eff Effective Output Capacitance - 230 - Vss = 0V, Vos = 0V to 60V ©
Source-Drain Ratings and Characteristics
Parameter Min Typ. Max. Units Conditions
Is Continuous Source Current -- -- 45 MOSFET symbol D
(Body Diode) A showing the (ra,
ISM Pulsed Source Current - - 180 integral reverse G ld,
(Body Diode) CD p-n junction diode. a
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 30A, VGS = 0V oo
trr Reverse Recovery Time - 30 45 ns TJ = 25°C, IF = 30A, VDD = 38V
Qrr Reverse Recovery Charge -- 28 42 no di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2

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