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IRFR2407IRN/a2500avai75V Single N-Channel HEXFET Power MOSFET in a D-Pak package


IRFR2407 ,75V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
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IRFR2407
75V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
TOR Rectifier
Surface Mount (IRFR2407)
Straight Lead (IRFU2407)
Advanced Process Technology
Dynamic dv/dt Rating
Fast Switching
0 Fully Avalanche Rated
Description
Seventh Generation HEXFETO Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
PD -93862
IRFR2407
IRFU2407
HEXFET® Power MOSFET
VDSS = 75V
RDS(on) = 0.026n
ID = 42A©
hole mounting applications. Power dissipation levels D-Pak I-Pak
up to 1.5 watts are possible in typical surface mount IRFR2407 IRFU2407
applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGS @ 10V 42©
ID @ To = 100°C Continuous Drain Current, VGS © 10V 29© A
IDM Pulsed Drain Current C) 170
PD @Tc = 25°C Power Dissipation 110 W
Linear Derating Factor 0.71 W/°C
VGs Gate-to-Source Voltage * 20 V
EAS Single Pulse Avalanche Energy© 130 m]
IAR Avalanche Current© 25 A
EAR Repetitive Avalanche Energy(0 11 mJ
dv/dt Peak Diode Recovery dv/dt Cs) 5.0 V/ns
T J Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw 10 lbf-in (1 Atom)
Thermal Resistance
Parameter Typ. Max. Units
Rax: Junction-to-Case - 1.4
ReJA Junction-to-Ambient (PCB mount)' - 50 °C/W
ReJA Junction-to-Ambient - 1 10
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994


3/1/00
IRFR/U2407
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 75 - - V VGs = 0V, ID = 250pA
AVRosmn) Static Drain-to-Source On-Resistance - 0.0218 0.026 Q VGS = 10V, lo = 25A 0)
Vesah) Gate Threshold Voltage 2.0 - 4.0 V Vros = 10V, ID = 250PA
gfs Forward Transconductance 27 - - S Vos = 25V, ID = 25A
loss Drain-to-Source Leakage Current - - 20 pA Vos = 75V, VGS = 0V
- - 250 Vos = 60V, VGS = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 200 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -200 VGS = -20V
ch Total Gate Charge - 74 110 ID = 25A
Qgs Gate-to-Source Charge - 13 19 nC Ws = 60V
di Gate-to-Drain ("Miller") Charge - 22 34 VGS = ION/Ei)
tom) Turn-On Delay Time - 16 - VDD = 38V
tr Rise Time - 90 - ns lo = 25A
tum) Turn-Off Delay Time - 65 - Rs = 6.89
tf Fall Time - 66 - VGS = 10V ©
u, Internal Drain Inductance - 4.5 - E:\zigygizi’ E D
from package G
Ls Internal Source Inductance - 7.5 - and center of die contact s
Ciss Input Capacitance - 2400 - VGS = 0V
Cass Output Capacitance - 340 - pF Vros = 25V
Crss Reverse Transfer Capacitance - 77 - f = 1.0MHz, See Fig. 5
Cass Output Capacitance - 15700 - VGs = 0V, Vos = 1.0V, f = 1.0MHz
COSS Output Capacitance - 220 - VGS = 0V, Vos = 60V, f = 1.0MHz
Coss eff. Effective Output Capacitance © - 220 - VGs = 0V, V05 = 0V to 60V
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 42© A showing the
ISM Pulsed Source Current - - 170 integral reverse G
(Body Diode) C) p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 25A, VGS = 0V Cr)
trr Reverse Recovery Time - 100 150 ns TJ = 25°C, IF = 25A
Q,, Reverse RecoveryCharge - 400 600 nC di/dt = 100A/us ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
OD Repetitive rating; pulse width limited by
max. junction temperature.
© Starting TJ = 25°C, L = 0.42mH
Rs = 259, IAS = 25A.
© ISD f 25A, di/dt s: 290/Ups, VDD s: V(BRpss,
Tr-: 175°C

© Pulse width I 300ps; duty cycle S 2%.
s Coss eff. is a fixed capacitance that gives the same charging time
as Coss while Vros is rising from 0 to 80% VDSS
© Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A

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