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IRFR1205-IRFU1205
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 91318B
IRFR/U1205
International
Tart, Rectifier
HEXFET® Power MOSFET
0 Ultra Low On-Resistance D
0 Surface Mount (IRFR1205) VDSS = 55V
0 Straight Lead (IRFU1205)
0 Fast Switching -
0 Fully Avalanche Rated G " RDS(on) - 0.027n
Description Iro = 44A@
Fifth Generation HEXFETs from International Rectiher S
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efhcient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using ' "
vapor phase, infrared, or wave soldering techniques. D-PAK l-PAK
The straight lead version (IRFU series) is for through- TO-252AA T0-251AA
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 446)
ID @ To = 100°C Continuous Drain Current, VGS @ 10V 31 © A
IDM Pulsed Drain Current COC) 160
Pro @Tc = 25°C Power Dissipation 107 W
Linear Derating Factor 0.71 W/°C
Ves Gate-to-Source Voltage i 20 V
EAS Single Pulse Avalanche Energy©© 210 mJ
IAR Avalanche Current0D© 25 A
EAR Repetitive Avalanche EnergyC)© 11 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 1 .4
ReJA Junction-to-Ambient (PCB mount) ** - 50 "CA/V
RQJA Junction-to-Ambient - 1 10
1
5/11/98
IRFRIU1205
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DS$ Drain-to-Source Breakdown Voltage 55 - - V VGs = 0V, ID = 250pA
AV(BR)DS$IATJ Breakdown Voltage Temp. Coemcient - 0.055 - V/°C Reference to 25°C, ID = 1mA
Rrosom Static Drain-to-Source On-Resistance - - 0.027 VGs = 10V, ID = 26A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V I/ns = VGs, ID = 250pA
gts Forward Transconductance 17 - - S Vos = 25V, ID = 25A©
loss Drain-to-Source Leakage Current _- _- 2255:) pA VS: , iix' V2: , 8V To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A Vss = 20V
Gate-to-Source Reverse Leakage - - -100 VGs = -20V
Qg Total Gate Charge - - 65 ID = 25A
Q95 Gate-to-Source Charge - - 12 nC Vos = 44V
di Gate-to-Drain ("Miller") Charge - - 27 VGS = 10V, See Fig. 6 and 13 ©©
tum”) Turn-On Delay Time - 7.3 - VDD = 28V
tr Rise Time - 69 - ns ID = 25A
tdom Turn-Off Delay Time - 47 - Rs = 12n
" Fall Time 60 RD = 1.19, See Fig. 10 Cr)(2)
u, Internal Drain Inductance - 4.5 - nH Between lead, D
6mm (0.25in.) JC )
Ls Internal Source Inductance - 7.5 - from package . G
and center of die contact© s
Ciss Input Capacitance - 1300 - VGS = 0V
Cass Output Capacitance - 410 - pF 1/ros = 25V
Crss Reverse Transfer Capacitance - 150 - f = 1.0MHz, See Fig. 5©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 446) MOSFET symbol
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) C)0) - - 160 p-n junction diode.
Vso Diode Forward Voltage - - 1.3 V T: = 25°C, Is = 22A, l/ss = 0V (D
tn Reverse Recovery Time - 65 98 ns T: = 25°C, IF =25A
Qrr Reverse RecoveryCharge - 160 240 nC di/dt = 100A/us C9Cr)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See rig. 11 )
© VDD = 25V, starting Tu = 25°C, L = 470pH
Rs = 259, bus = 25A. (See Figure 12)
© ' 3 25A, di/dt s 320A/ps, VDD S V(BR)DSSI
T J f 175°C
© Pulse width f 300ps; duty cycle f 2%.
s Calculated continuous current based on maximum allowable junction
temperature; Package limitation current = 20A
© This is applied tor l-PAK, Ls of D-PAK is measured between lead and
center of die contact
© Uses IRFZ44N data and test conditions
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
