IRFR010 ,(IRFR012) HEXFET Transistorsapplications where limited heat
dissipation is required such as, computers and
peripherals, telec ..
IRFR010 ,(IRFR012) HEXFET TransistorsFEATURES:
Surface Mountable (Order As IRFR010)
Straight Lead Option (Order As IFtFU010)
Fast ..
IRFR010 ,(IRFR012) HEXFET TransistorsINTERNATIONAL RECTIFIER
HBSSHSE 0006250.?
ata Sheet No. PD-9.514A
T-35-25
1.].EDID
.
..
IRFR010 ,(IRFR012) HEXFET Transistorsapplications where PC
Board surface mounting is desirable. The surface mount
option IRFR010 is pr ..
IRFR014 ,60V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. D-PAK I-PAK
TO4?52AA TO-251AA
DATA
SHEETS
Absolute Maximum Ratings
Paramet ..
IRFR014TR ,60V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. Power dissipation levels up to 1.5 watts
are possible In typical surface mount
ISL6622ACRZ , VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers
ISL6622CRZ , VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers
ISL6700IB ,80V/1.25A Peak/ Medium Frequency/ Low Cost/ Half-Bridge DriverFeaturesCost, Half-Bridge Driver• Drives 2 N-Channel MOSFETs in Half-Bridge The ISL6700 is an 80V/1 ..
ISL6700IB ,80V/1.25A Peak/ Medium Frequency/ Low Cost/ Half-Bridge DriverApplications• Telecom/Datacom Power Supplies• Half-Bridge Converters• Two-Switch Forward Converters ..
ISL6721A ,Flexible Single-ended Current Mode PWM ControllerApplications• 1% Tolerance Voltage Reference• Telecom and Datacom Power• Pb-Free (RoHS Compliant)• ..
ISL6721AB ,Flexible Single Ended Current Mode PWM ControllerApplicationsISL6721AV -40 to 105 16 Ld TSSOP M16.173• Telecom and Datacom Power• Wireless Base Stat ..
IRFR010
(IRFR012) HEXFET Transistors
INTERNATIONAL RECTIFIER
IIE o [l,gasige, nouaaeu-‘z [I
ata Sheet No. PD-9.514A
. T-35-25
INTERNATIONAL RECTIFIER EtOR .
AVALANCHE AND dvldt RATED
IRFFID’IO
FllEDtFErll" TRANSISTORS
IFIFRO’IE
IRFUD’IO
IRFUD’IE
N-CHANNEL
50 Volt, 0.20 Ohm HEXFET
The HEXFET* technology is the key to International
Rectifier's advanced line of power MOSFET transistors.
Efficient geometry and unique processing of the HEXFET0
design achieve a very low on-state resistance combined
with high transconductance and great device ruggedness.
HEXFETs® feature all of the established advantages of
MOSFETs such as voltage control, ve fast switching,
ease of paralleling, and temperature sta ility of the elety
trical parameters.
Surface mount packages enhance circuit performance b
reducing stray inductances and capacitance. The D-Pa
(T 0-252AA surface mount ackage brings the advan-
tages of H XFETs to high vo ume applications where PC
Board surface mounting ls desirable. The surface mount
option IRFR01O is provided on 16mm tape, The straight
lead option IRFU010 of the device ls called the l-Pak
(T O-251AA).
They are well suited for applications where lImlted heat
dissipation is required such as, computers and
peripherals, telecommunications equipment, DCIDC con-
verters, and a wide range of consumer products.
Amuoze
l" wnmu
' nuns
moon ”mm
J_L_ l . ,
“I now
v.' mam]! Cf
I -P 6. T i:
. - ara - . omam
.' "W'' " nuaom
310! VIEW
xnnlm I
t! ", -
0mm -Frs _
11mm .
11mm -*
alumna:
1.,C_e'r,2! 155 41m ox
’ I — t .
““3: “u“ “u
humanly
, ihot mm "
luv at am“ nu . mm
mlmmmowuuuam
Wmsuuaeu
BOTTOM VIEW
Case Style T0-252AA (IRFR Series)
Dimensions in Millimeters and (Inches)
Product Summary
Part Number BVDSS RDS(on)
IRFR010 50V 0.20n
IRFRO12 50V 0.300
IRFU010 50V 0.200
IRFUO12 50V 0.300
FEATURES:
D Surface Mountable (Order As IRFR010)
" Straight Lead Option (Order As IRFU010)
D Fast Switching
D Low Drive Current
" Easily Paralleled
It Excellent Temperature Stability
IOWOI #WW
Case Style TO-251AA (IRFU Series)
Dimensions in Millimeters and (Inches)
av .4..(h- - . . u - ' A 7
INTERNATIONAL RECTIFIER IIE o D qassqsa 0033351, =1 [l
IRFR010, IRFR012,‘IRFUO10, IRFU012 Devices
T-35-25 '
Absolute Maximum Ratings
Parameter IRFROIO, IHFUMO IHFROIZ. IRFU012 Units .
ID o Tc " 25H3 Continuous Drain Current " 6.7 A . _
ID o Tc " 100°C Conllnuous Drain Cummt " 4.2 A
'DM Pulsed Drain Current ti) 33 . " A
PD © Tc " 25°C Max. Power Disslpation 25 . W
Linear Daraling Factor 0.20 WIK C5)
vas t1attFttySourett Voltage . 120 V
IL Avalanche Curranl (i) 1.5 A
(See Fig. 14)
dv/dt Peak mode recovery dvldl co 2.0 WM
(See Fig. 17)
Td Operallng Juncllon ~55 to 150 "
rsra Storags Temperature Ranga
Lead Temperature 300 (0.063 In. (1.8mm) Horn case for IM) "
Electrlcal Characteristics © n = 25°C (Unless Otherwlse Specmea)
Paarneler Type Min. Typ, Max. Units Teal conditions
EVDSS thigrFttFSaurgtt Breakdown Voltage All 50 - - lf vas " ov, '0 " 250PA
Rostony Static thttWttrSouttyt MFR0t0 - 0.18 0.20
On-sme Healslanca tl) IRFU010 n Ves . tov, In "4.2A
IRFR012 - 0.20 0.30
IFIFU012
ID(°n) On-Slala Drain Current 6) IRFROIO " .
IRFU010 - - A V05) IND") N HDS(0H) Max. V _
IRFR012 th vas " -.ttN
IRFU012
VGS(th) Gale Threshold Voltage ALC 2.0 - 4.0 V ms " Was. ID - MOPA
gts Forward Transconduclanca t9 AU. 2.1 3.1 _ trip) v05 2 50V,le " 3.6A
'DSS Zevo Gate Voltage Draln Current - - 250 vos " Max. Rating, VGS " 0V
ALL - - 1000 "A VDS " 0.0 x Max. Rating
Vas . ov.1'., " 125°C
kms thtitFto.Souret, Leakage Forward ALL - -. 500 nA vas " 20V
lass Gale-lo-Source Leakage Reverse ALL - - -500 nA vas " -20V
Og Total Gate Charge ALL - 6.7 " " vas " 10V, ID n 7.3A
VDS I 0.3 A Max. Rating
Ars taattrm"ourtmfhtlro AU. " " F See Frg. "
09d thtttHo.0rah ("Miller") Charge - 3.2 4.6 " (Independent or operating temperature)
tdtrrn) TumOn Delay Tlma ALL. - I1 17 na VDD " am ID .. T.7A, Ba " 24D
tr Rise Time ALL - 33 50 M no = 3.30
1dioit) TurmOft Delay Time AU. - 12 18 us See Fig. 15
tt Full Time AU. - 23 35 M (Independent of operating temperature)
Lo Internal Drain Inductance AU. - 4.5 -.. nH Measured from the drain Modifed MOSFET symbol
lead. 6mm (0.25 in.) (mm showing the inlemal
package to center of die. Induclaqces.
LS lnlarnal Source lnduclance ALI. - 7.5 - nH Measured from the snurce
had, 6mm (0.25 In.) tmm
package to saurce
bonding pad. '
tkss tnput Capacllance ALL - 250 _ pF vas -- ov, V03 " 25V
cos, Output Capacilance ALL - 150 - pF t " 1.0 MHz
cm Reverse Transfer Capacitance AU. - 29 - pF See Fig. 10
