IRFPS40N50L ,500V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) packageFeatures and Benefits• • ..
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IRFPS40N50L
500V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) package
PD- 93923C
I t ti l
':fliiilTgl(1lfi)rile-l SMPS MOSFET IRFPS4ON5OL
HEXFET@ Power MOSFET
Applications
. Zero Voltage Switching SMPS Voss Rios(on) typ. Trr typ. ID
0 Telecom and Server Power Supplies
q Uninterruptible Power Supplies 500V 0.087Q 170ns 46A
. Motor Control applications
Features and Benefits
0 SuperFast body diode eliminates the need for external tCity,
diodes in ZVS applications. _ d/Ws..
. Lower Gate charge results in simpler drive requirements. 'i'ic(''i'-,rfrr, "
Enhanced dv/dt capabilities offer improved ruggedness. u..
a Higher Gate voltage threshold offers improved noise
immunity.
SUPER TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Vss @ 10V 46
ID @ To = 100°C Continuous Drain Current, VGS @ 10V 29 A
IDM Pulsed Drain Current (D 180
PD @Tc = 25°C Power Dissipation 540 W
Linear Derating Factor 4.3 WIT
VGs Gate-to-Source Voltage 130 V
dv/dt Peak Diode Recovery dv/dt © 25 V/ns
T, Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 46 MOSFET symbol
(Body Diode) A showing the
ISM Pulsed Source Current - - 180 integral reverse
(Body Diode) co p-n junction diode.
VSD Diode Forward Voltage - - 1.5 V To = 25''C, IS = 46A, VGs = OV C)
trr Reverse Recovery Time - 170 250 ns T J = 25°C, IF = 46A
- 220 330 To-- 125°C, di/dt = 100A/ps ©
Qrr Reverse Recovery Charge - 705 1060 nC To = 25°C, IS = 46A, VGs = 0V (0
- 1.3 2.0 To=125''C,di/dt= 100A/ps (E)
IRRM Reverse Recovery Current - 9.0 - A T J = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
1
07/18/03
IRFPS40N50L
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 500 - - V I/ss = 0V, lo = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.60 - Vl°C Reference to 25°C, lo = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 0.087 0.100 Q I/ss = 10V, ID = 28A (9
VGS(th) Gate Threshold Voltage 3.0 - 5.0 v I/os = veg, b = 250pA
loss Drain-to-Source Leakage Current - - 50 uA Vos = 500V, I/ss = 0V
- - 2.0 mA Vos = 400v, I/ss = OV, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 30V
Gate-to-Source Reverse Leakage - - -100 VGS = -30V
Re Internal Gate Resistance - 0.90 - Q f= 1MHz, open drain
Dynamic @ T J = 25°C (unless otherwise specified)
Symbol Parameter Min Typ. Max. Units Conditions
gfs Forward Transconductance 21 - - S 1/ros = 50V, ID = 46A
09 Total Gate Charge - - 380 ID = 46A
As Gate-to-Source Charge - - 80 nC I/cos = 400V
di Gate-to-Drain ("Millef') Charge - - 190 l/ss = 10V, See Fig. 7 & 15 ©
tam) Turn-On Delay Time - 27 - VDD = 250V
t, Rise Time - 170 - ns ID = 46A
tam") Turn-Off Delay Time - 50 - Rs = 0.859
t: Fall Time - 69 - Ves = 10V, See Fig. 14a & 14b 6)
Ciss Input Capacitance - 8110 - Ves = 0V
Cass Output Capacitance - 960 - I/cos = 25V
Crss Reverse Transfer Capacitance - 130 - f = 1.0MHz, See Fig. 5
C055 Output Capacitance - 11200 - pF VGS = 0V, Vos = 1.0V, f = 1.0MHz
Cass Output Capacitance - 240 - VGS = 0V, Vos = 400V, f = 1.0MH2
Cass eff. Effective Output Capacitance - 440 - l/ss = 0V,VDS = 0V to 400V ©
C055 eff. (ER) Effective Output Capacitance - 310 -
(Energy Related)
Avalanche Characteristics
S bol Parameter
EAS rgy
Thermal Resistance
Symbol Parameter Typ. Max. Units
Rem J unction-to-Case - 0.23
Recs Case-to-Sink, Flat, Greased Surface 0.24 - °CNV
Ram Junction-to-Ambient - 40
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11).
© Starting TJ = 25°C, L = 0.86mH, Rs = 259,
IAS = 46A. (See Figure 12).
G) Iso f 46A, di/dt S 367A/ps, VDD f V(BR)DSS’
T J 3 150°C.
2
© Pulse width 3 400ps; duty cycle f 2%.
s Cass eff. is a foted capacitance that gives the same charging time
as Coss while Vros is rising from O to 80% Voss.
Coss eff.(ER) is a fixed capacitance that stores the same energy
as Coss while Vos is rising from 0 to 80% I/oss.
