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IRFPS38N60L |IRFPS38N60LIR N/a450avai600V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) package


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IRFPS38N60L
600V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) package
International
TOR Rectifier
Applications
Zero Voltage Switching SMPS
Telecom and Server Power Supplies
Uninterruptible Power Supplies
Motor Control applications
Features and Benefits
. SuperFast body diode eliminates the need for external
diodes in ZVS applications.
Lower Gate charge results in simpler drive requirements.
Enhanced dv/dt capabilities offer improved ruggedness.
q Higher Gate voltage threshold offers improved noise immunity.
Absolute Maximum Ratings
SMPS MOSFET
PD - 94630
RFPS38N60L
HEXFET@ Power MOSFET
Vnss RDS(on) typ.
Trr typ.
600V 120mQ
SUPER TO-247AC
Parameter Max. Units
ID @ TC = 25''C Continuous Drain Current, VGS @ 10V 38
ID © TC = 100°C Continuous Drain Current, I/ss @ 10V 24 A
los, Pulsed Drain Current C) 150
PD @Tc = 25°C Power Dissipation 540 W
Linear Derating Factor 4.3 Wl°C
VGS Gate-to-Source Voltage $30 V
dv/dt Peak Diode Recovery dv/dt © 13 V/ns
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw 1.1(10) N-m (Ibf-in)
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
I s Continuous Source Current - - 38 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 150 integral reverse G
(Body Diode) co p-n junction diode. s
VSD Diode Forward Voltage - - 1.5 V To = 25°C, IS = 38A, VGS = 0V ©
trr Reverse Recovery Time - 170 250 ns T J = 25°C, IF = 38A
- 420 630 To-- 125°C, di/dt = 100A/ps ©
Qrr Reverse Recovery Charge - 830 1240 nC T J = 25°C, ls = 38A, VGS = 0V ©
- 2600 3900 To-- 125°C, di/dt = 100A/ps ©
IRRM Reverse Recovery Current - 9.1 14 A T J = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
1
02/12/03
International
IRFPS38N60L
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 600 - - V VGS = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.41 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 120 150 mn Vss = 10V, ID = 23A ©
VGS(th) Gate Threshold Voltage 3.0 - 5.0 V Ws = N/ss, ID = 250pA
loss Drain-to-Source Leakage Current - - 50 pA I/os = 600V, I/ss = 0V
- - 2.0 mA Ws = 480V, Ves = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 30V
Gate-to-Source Reverse Leakage - - -100 VGS = -30V
Re Internal Gate Resistance - 1.2 - Q f= 1MHz, open drain
Dynamic @ Tu = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 20 - - S Ws = 50V, ID = 23A
Qg Total Gate Charge - - 320 ID = 38A
Qgs Gate-to-Source Charge - - 85 nC VDS = 480V
di Gate-to-Drain ("Miller") Charge - - 160 VGS = 10V, See Fig. 7 & 15 C9
td(on) Turn-On Delay Time - 44 - Va, = 300V
t, Rise Time - 130 - ns b = 38A
td(off) Turn-Off Delay Time - 92 - Rs = 4.39
tr Fall Time - 69 - I/ss = 10V, See Fig. 11a &11b ©
Ciss Input Capacitance - 7990 - I/ss = OV
Coss Output Capacitance - 740 - Vos = 25V
Crss Reverse Transfer Capacitance - 72 - pF f = 1.0MHz, See Fig. 5
Coss eff. Effective Output Capacitance - 350 - VGS = 0V,VDS = 0V to 480V s
Coss eff. (ER) Effective Output Capacitance - 260 -
(Energy Related)
Avalanche Characteristics
mbol Parameter
EAs ng se va
IAR va
EAR rgy
Thermal Resistance
Symbol Parameter Typ. Max. Units
ROJC Junction-to-Case - 0.22
Recs Case-to-Sink, Flat, Greased Surface 0.24 - ''C/W
ROJA Junction-to-Ambient - 40
Notes:
© Pulse width S 300ps; duty cycle s: 2%.
(9 Coss eff. is a foted capacitance that gives the same charging time
as Coss while Vos is rising from 0 to 80% Voss.
Coss eff.(ER) is a fixed capacitance that stores the same energy
as Coss while Vos is rising from O to 80% Voss.
co Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
© Starting TJ = 25°C, L = 0.91mH, Rs = 259,
IAs = 38A, dv/dt = 13V/ns. (See Figure 12a)
G) Iso f 38A, di/dt S 630A/ps, VDD f V(BR)DSS’
T J 3 150°C.
2
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