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IRFPS3810IORN/a49avai100V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) package
IRFPS3810 |IRFPS3810IR N/a39avai100V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) package


IRFPS3810 ,100V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) packageapplications.Super-247™Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Cu ..
IRFPS3810 ,100V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) packagePD - 93912BIRFPS3810®HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceV = ..
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IRFPS3810
100V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) package
PD - 93912B
IRFPS3810
HEXFET® Power MOSFET
International
TOR Rectifier
0 Advanced Process Technology D
0 Ultra Lew fh.tR.fs.i.stance VDSS = 100V
0 Dynamic dv/dt Rating
o 175°C 0 eratin Tem erature
.9 . g p . RDSM) = 0.0090
0 Fast Switching G
. Fully Avalanche Rated
ID = 170A©
Description
The HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to .. _
achieve extremely low on-resistance per silicon area. _ "iii'.
This benefit, combined with the fast switching speed 'iis'':'ij1ilii
and ruggedized device design that HEXFET power - -
MOSFETs are well known for, provides the designer \N.
with an extremely efficient and reliable device for use in
a wide variety of applications.
super-247TM
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS © 10V 1706)
ID @ To = 100°C Continuous Drain Current, VGS @ 10V 120© A
IDM Pulsed Drain Current co 670
Po @Tc = 25°C Power Dissipation 580 W
Linear Derating Factor 3.8 W/''C
VGS Gate-to-Source Voltage * 30 V
EAS Single Pulse Avalanche Energy© 1350 mJ
IAR Avalanche CurrentC) 100 A
EAR Repetitive Avalanche Energy© 58 mJ
dv/dt Peak Diode Recovery dv/dt s 2.3 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.26
Recs Case-to-Sink, Flat, Greased Surface 0.24 - °C/W
ReJA Junction-to-Ambient - 40
1

04/26/02
IRFPS3810
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage 100 - - V VGS = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.11 - V/°C Reference to 25°C, ID = 1mA
Roam) Static Drain-to-Source On-Resistance - - 0.009 n VGS = 10V, ID = 100A ©
VGS(th) Gate Threshold Voltage 3.0 - 5.0 V Vos = 10V, ID = 250pA
gfs Forward Transconductance 52 - - S Vos = 50V, ID = 100A
loss Drain-to-Source Leakage Current - - 25 pA Vos = 100V, VGS = 0V
- - 250 Ws = 80V, VGS = 0V, T: = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 30V
Gate-to-Source Reverse Leakage - - -100 VGS = -30V
% Total Gate Charge - 260 390 ID = 100A
095 Gate-to-Source Charge - 49 74 nC Vos = 80V
di Gate-to-Drain ("Miller") Charge - 160 250 VGS = 10V@
Gon) Turn-On Delay Time - 24 - VDD = 50V
tr Rise Time - 270 - ns ID = 100A
tdott) Turn-Off Delay Time - 45 - Rs = 1.039
tf Fall Time - 140 - VGs = 10V ©
LD Internal Drain Inductance - 5.0 - Between lead, D
nH 6mm (0.25m.) E )
from package G
Ls Internal Source Inductance - 13 - .
and center of die contact s
Ciss Input Capacitance - 6790 - VGS = 0V
Coss Output Capacitance - 2470 - pF Vros = 25V
Crss Reverse Transfer Capacitance - 990 - f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 10740 - VGS = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 1180 - VGS = 0V, Vos = 80V, f = 1.0MHz
Coss eff. Effective Output Capacitance (9 - 2210 - Vss = 0V, Vros = 0V to 80V
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 170© A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) (O - - 670 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V TJ = 25''C, Is = 100A, l/ss = 0V (ii)
tn Reverse Recovery Time - 220 330 ns T: = 25°C, IF = 100A
Qrr Reverse RecoveryCharge - 1640 2460 nC di/dt= 100/Vys (0
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by L3+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
© Starting T: = 25°C, L = 0.27mH
Rs = 259, lAs = 100A. (See Figure 12)
© ISD s 100A, di/dt s 350A/ps, vDD s V(Bmss,
Tr-a 175°C

© Pulse width s: 400ps; duty cycle 3 2%.
S %ss eff. is a roted capacitance that gives the same charging time
as C055 while VDS is rising from O to 80% VDSS
© Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 105A.

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