IC Phoenix
 
Home ›  II32 > IRFPS35N50L,500V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) package
IRFPS35N50L Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
IRFPS35N50LIR N/a1063avai500V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) package


IRFPS35N50L ,500V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) packageApplications HEXFET Power MOSFET Switch Mode Power Supply (SMPS) Uninterruptible Power Supply V ..
IRFPS37N50A ,500V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) packageApplicationsV R max IDSS DS(on) Dl Switch Mode Power Supply (SMPS)l Uninterruptable Power Supply 50 ..
IRFPS3810 ,100V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) packageapplications.Super-247™Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Cu ..
IRFPS3810 ,100V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) packagePD - 93912BIRFPS3810®HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceV = ..
IRFPS3815 ,150V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) packageapplications.Super-247™Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Cu ..
IRFPS38N60L ,600V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) packageFeatures and Benefits•          •    ..
ISL6614CRZ-T ,Dual advanced synchronous rectified buck MOSFET driver with protection features.FeaturesThe ISL6614 integrates two ISL6613 MOSFET drivers and is • Quad N-Channel MOSFET Drives for ..
ISL6614IBZ-T , Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features
ISL6614IRZ , Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features
ISL6615ACRZ , High-Frequency 6A Sink Synchronous MOSFET Drivers with Protection Features
ISL6620ACBZ , VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers
ISL6622ACBZ , VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers


IRFPS35N50L
500V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) package
International
TOR Rectifier
Applications
SMPS MOSFET
PD- 94227
IRFPS35N50L
HEXFET® Power MOSFET
q Switch Mode Power Supply (SMPS)
o Uninterruptible Power Supply Voss RDS(on) typ. ID
o High Speeq Power switchip.g . 500V 0.1259 34A
0 ZVS and High Frequency Circuit
0 PWM Inverters
Benefits
q Low Gate Charge Qg results in Simple Drive Requirement
0 Improved Gate, Avalanche and Dynamicdv/dt G ”gift
Ruggedness , éifi‘x
. Fully Characterized Capacitance and Avalanche Voltage F 'sv,]"
and Current
. Low Trr and Soft Diode Recovery TM
0 High Performance Optimised Anti-parallel Diode Super-247
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGS @ 10V 34
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 22 A
IDM Pulsed Drain Current CD 140
Pro @Tc = 25°C Power Dissipation 450 W
Linear Derating Factor 3.6 W/''C
Vss Gate-to-Source Voltage , 30 V
dvldtPeak Diode Recovery dv/dt © 11 V/ns
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range
Soldering Temperature, tor 10 seconds 300 "C
(1 .6mm from case )
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 34 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 140 integral reverse G
(Body Diode) (D p-n junction diode. s
va, Diode Forward Voltage - - 1.5 V TJ = 25°C, Is = 34A, VGs = 0V ©
. - 170 250 To = 25°C IF = 34A
trr Reverse Recovery Time - 220 330 ns To = 125°C di/dt = 100A/ps ©
er Reverse Recovery Charge - 670 1010 nC To = 25''C
- 1.5 2.2 wc To = 125°C
IRRM Reverse Recovery Current - 8.5 - A
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Typical SMPS Topologies
0 Bridge Converters

o All Zero Voltage Switching
5/15/02
IRFPS35N50L International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 500 - - V VGs = 0V, lo = 250pA
Avungss/ATJ Breakdown Voltage Temp. Coemcient - 0.12 - V/°C Reference to 25°C, ID = 1mA©
RDs(on) Static Drain-to-Source On-Resistance - 0.125 0.145 n VGS = 10V, ID = 20A (9
VGSith) Gate Threshold Voltage 3.0 - 5.0 V Vos = Kas, ID = 250pA
. - - 50 pA VDs = 500V, VGS = 0V
loss Drain-to-Source Leakage Current - - 2.0 m A Vos = 400V, l/cs = ov, Tu = 125°C
I Gate-to-Source Forward Leakage - - 100 n A VGs = 30V
GSS Gate-to-Source Reverse Leakage - - -100 VGs = -30V
Dynamic @ Tu = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gis Forward Transconductance 18 - - S Vos = 50V, ID = 20A
% Total Gate Charge - - 230 ID = 34A
093 Gate-to-Source Charge - - 65 nC I/css = 400V
di Gate-to-Drain ("Miller") Charge - - 110 VGS = 10V, See Fig. 6 and 13 ©
tam) Turn-On Delay Time - 24 - VDD = 250V
tr Rise Time - 100 - ns ID = 34A
td(ott) Turn-Off Delay Time - 42 - Rs = 1.29
tf Fall Time - 42 - VGS = 10V,See Fig. 10 ©
Ciss Input Capacitance - 5580 - VGS = 0V
Coss Output Capacitance - 590 - V93 = 25V
Crss Reverse Transfer Capacitance - 58 - pF f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 7290 - I/ss = 0V, I/os = 1.0V, f = 1.0MHz
Coss Output Capacitance - 160 - l/ss = 0V, I/os = 400V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 320 - VGS = 0V, VDs = 0V to 400V ©
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 560 mJ
IAR Avalanche Current© - 34 A
EAR Repetitive Avalanche Energy© - 45 mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.28
Recs Case-to-Sink, Flat, Greased Surface 0.24 - °C/W
ReJA Junction-to-Ambient - 40
Notes:
C) Repetitive rating; pulse width limited by © Pulse width f 400ps; duty cycle s: 2%.
max. junction temperature. (See Fig. 11)
© Starting TJ = 25°C L = 0 97mH Rs = 259 S Coss eff. is a fixed capacitance that gives the same charging time
IAs = 34A (See Figure 12a) as Coss while Vos is rising from 0 to 80% Voss
© ISO S 34A, di/dt S 510Alps, VDD S V(BR)DSS,
T J g 150°C.
2
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED