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IRFP3710-IRFP3710PBF
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
PD-91490C
IRFP3710
International
152R Rectifier
HEXFET*) Power MOSFET
0 Advanced Process Technology D
o Dynoamic dv/dt Rating VDSS = 100V
0 175 C Operating Temperature
o Fast Switching r4
A R = 0.0259
o Fully Avalanche Rated G " DS(on)
. . ID = 57A
Description s
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-247 package is preferred for commercial-
industrial applications where higher power levels
preclude the use of TO-220 devices. The TO-247 is
similar but superior to the earlier TO-218 package TO-247AC
because of its isolated mounting hole.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, l/ss @ 10V s 57
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V co 40 A
IDM Pulsed Drain Current C)6) 180
PD @Tc = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
I/ss Gate-to-Source Voltage * 20 V
EAs Single Pulse Avalanche Energy©6) 530 mJ
IAR Avalanche CurrenK0S 28 A
EAR Repetitive Avalanche Energy(0 20 mJ
dv/dt Peak Diode Recovery dv/dt ©S 5.0 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Ric Junction-to-Case - 0.75
chs Case-to-Sink, Flat, Greased Surface 0.24 - ''C/W
' Junction-to-Ambient - 40
1
IRFP3710 International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V l/ss = 0V, ID = 250pA
DV(BR)Dss/DTJ Breakdown Voltage Temp. Coeffcient - 0.12 - V/°C Reference to 25°C, ID = 1mAS
RDs(on) Static Drain-to-Source On-Resistance - -- 0.025 Q VGs = 10V, ID = 28A EO
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDs = VGS, ID = 250pA
gfs Forward Transconductance 20 - - S VDs = 25V, ID = 28A©
loss Drain-to-Source Leakage Current - - 25 pA VDS = 100V, VGS = 0V
- - 250 VDS = 80V, VGS = 0V, TJ = 150°C
I Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
GSS Gate-to-Source Reverse Leakage - - -100 VGS = -20V
09 Total Gate Charge - - 190 ID = 28A
Qgs Gate-to-Source Charge - - 26 nC VDs = 80V
di Gate-to-Drain ("Miller") Charge - - 82 VGs = 1.7V, See Fig. 6 and 13 (ii)6)
td(on) Turn-On Delay Time - 14 - VDD = 50V
tr Rise Time - 59 - ns ID = 28A
td(ott) Turn-Off Delay Time - 58 - R9 = 2.5W
tf Fall Time - 48 - RD = 1.7W, See Fig. 10 coco
LD Internal Drain Inductance - 5.0 - Between lgad,
nH 6mm (0.25in.) )
from package G
LS Internal Source Inductance - 13 - .
and center of die contact s
Ciss Input Capacitance - 3000 - VGs = 0V
Coss Output Capacitance - 640 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 330 - f = 1.0MHz, See Fig. 5©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode)S - - 57 showing the H2:
ISM Pulsed Source Current 180 A integral reverse G E
(Body Diode) C)G) - - p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 28A, I/ss = 0V ©
trr Reverse Recovery Time - 210 320 ns T: = 25°C, IF = 28A
Qrr Reverse RecoveryCharge - 1.7 2.6 pC di/dt = 100A/ps C06)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by © Pulse width L 300ps; duty cycle L 2%.
max. junction temperature. ( See fig. 11 )
© Starting Tu = 25°C, L = 1.4mH s Uses IRF37lO data and test conditions
Rs = 25W, IAS = 28A. (See Figure 12)
© kr, 2 28A, di/dt f 460/Ups, VDD 2 V(BR)DSS)
Tu 2 175°C
2
