IC Phoenix
 
Home ›  II31 > IRFP3703 ,30V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
IRFP3703 Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
IRFP3703 |IRFP3703IR N/a500avai30V Single N-Channel HEXFET Power MOSFET in a TO-247AC package


IRFP3703 ,30V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageApplicationsl Offline High Power AC/DC Convertors using Synchronous RectificationNotes � through ..
IRFP3710 ,100V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageapplications where higher power levelspreclude the use of TO-220 devices. The TO-247 issimilar but ..
IRFP3710PBF ,100V Single N-Channel HEXFET Power MOSFET in a TO-247AC packagePD-91490CIRFP3710®HEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingV = 100VDS ..
IRFP4004PBF ,40V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageApplicationsHigh Efficiency Synchronous Rectification inHEXFET Power MOSFETSMPSUninterruptibl ..
IRFP4110PBF ,100V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageApplicationsHEXFET Power MOSFETHigh Efficiency Synchronous Rectification in SMPSUninterruptib ..
IRFP4227 ,Plasma Display Panel Switch 200V Discrete HEXFET Power MOSFET in a Lead-Free TO-247AC Package.ApplicationsT max175 °C Low Q for Fast ResponseJG High Repetitive Peak Current Capability forDD ..
ISL6569CR ,Multi-Phase PWM ControllerISL6569®Data Sheet October 2003 FN9085.5Multi-Phase PWM Controller
ISL6594ACBZ , Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features
ISL6594BCRZ , Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features
ISL6594DCRZ-T , Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features
ISL6596CRZ , Synchronous Rectified MOSFET Driver
ISL6596IRZ , Synchronous Rectified MOSFET Driver


IRFP3703
30V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
. PD-93917A
International
Tait Rectifier SMPS MOSFET IRFP3703
HEXFET© Power MOSFET
Applications
o Synchronous Rectification
q Active ORing
VDss RDS(on) max ID
30V 0.00289 210A©
Benefits
o Ultra Low On-Resistance
0 Low Gate Impedance to Reduce Switching
Losses
0 Fully Avalanche Rated
T0-247AC
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGS @ 10V 210 ©
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 100 © A
G, Pulsed Drain Current (D 1000
Pro @Tc = 25°C Power Dissipation 230 W
PD @TA = 25°C Power Dissipation 3.8
Linear Derating Factor 1.5 Wl°C
VGS Gate-to-Source Voltage , 20 V
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ,TSTG Junction and Storage Temperature Range -55 to + 175 ''C
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.65
Recs Case-to-Sink, Flat, Greased Surface 0.24 - ''C/W
RQJA Junction-to-Ambient - 40
Typical SMPS Topologies
o Forward and Bridge Converters with Synchronous Rectification for Telecom and
Industrial Applications
0 Offline High Power AC/DC Convertors using Synchronous Rectification
Notes co through © are on page 8
1
5/18/01

IRFP3703 International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V VGS = 0V, ID = 250pA
AV(BR)Ds$/ATJ Breakdown Voltage Temp. Coemcient - 0.028 - V/°C Reference to 25°C, ID = 1mA
. . . - 2.3 2.8 VGS = 10V, ID = 76A ©
- - - r mn
RDS(on) Static Drain to Source On Resistant: - 2.8 3.9 Was = 7.0V, ID = 76A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vros = VGS, ID = 250pA
. - - 20 Vos = 24V, VGS = 0V
I Drain-to-Source Leaka e Current A
DSS g - - 250 p Vos = 24V, VGS = OV, To = 150°C
less Gate-to-Source Forward Leakage - - 200 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -200 VGs = -20V
Dynamic @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
git Forward Transconductance 150 - - S I/os = 24V, ID = 76A
% Total Gate Charge - 209 - ID = 76A
Q95 Gate-to-Source Charge - 62 - nC Vos = 24V
di Gate-to-Drain ("Miller") Charge - 42 - VGs=10V, Cr)
Mon) Turn-On Delay Time - 18 - Yoo = 15V, VGS = 10V
tr Rise Time - 123 - ns ID = 76A
tam) Turn-Off Delay Time - 53 - Rs = 1.8n
t, Fall Time - 24 - VGS = 10V ©
Ciss Input Capacitance - 8250 - VGs = 0V
Cass Output Capacitance - 3000 - Vos = 25V
Crss Reverse Transfer Capacitance - 290 - pF f = 1.0MHz
Coss Output Capacitance - 10360 - VGS = 0V, VDs = 1.0V, f = 1.0MHz
Coss Output Capacitance - 3060 - VGS = 0V, Vros = 24V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 2590 - VGs = 0V, VDs = 0V to 24V s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 1700 mJ
IAR Avalanche Current0) - 76 A
EAR Repetitive Avalanche Energy0) - 23 mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current 210© MOSFET symbol D
(Body Diode) - - A showing the
ISM Pulsed Source Current 1000 integral reverse G
(Body Diode) (D - - p-n junction diode. s
Va, Diode Forward Voltage - 0.8 1.3 V T: = 25°C, ls = 76A, VGS = 0V GD
trr Reverse Recovery Time - 80 120 ns TJ = 25°C, IF = 76A, Vos = 16V
Qrr Reverse RecoveryCharge - 185 275 nC di/dt=100A/ps ©
2

ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED