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IRFP350LC
400V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
IrttetttatiiEtal
IOR Rectifier
PD - 9.1229
IRFP350LC
HEXFET© Power MOSFET
Ultra Low Gate Charge
Reduced Gate Drive Requirement
Enhanced 30V Vgs Rating
Reduced Ciss, Cogs, Crss
Isolated Central Mounting Hole
Dynamic dv/dt Rated
Repetitive Avalanche Rated
VDSS = 400V
ID---. 16A
RDS(on) = 0.309
Description
This new series of Low Charge HEXFET Power MOSFETs achieve significantly
lower gate charge over conventional MOSFETs.
technology the device improvements allow for reduced gate drive requirements,
faster switching speeds and increased total system savings.
improvements combined with the proven ruggedness and reliability of HEXFETs
offer the designer a new standard in power transistors for switching applications.
The TO-247 package is preferred for commerciaI-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-21 8 package because of its isolated mounting hole.
Absolute Maximum Ratings
Utilizing advanced Hexfet
These device
TO-247AC
Parameter Max. Units
ID @ Tc = 25''C Continuous Drain Current, V GS @ 10V 16
ID @ Tc = 100°C Continuous Drain Current, V GS @ 10V 9.9 A
IDM Pulsed Drain Current (D 64
PD @Tc = 25°C Power Dissipation 190 W
Linear Derating Factor 1.5 Wl°C
I/cs Gate-to-Source Voltage E30 V
EAS Single Pulse Avalanche Energy © 390 mJ
IAR Avalanche Current OD 16 A
EAR Repetitive Avalanche Energy (D 19 md
dv/dt Peak Diode Recovery dv/dt © 4.0 V/ns
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rsuc Junction-to-Case - - 0.65
Recs Case-to-Sink, Flat, Greased Surface - 0.24 - "CA/V
ReJA Junction-to-Ambient - - 40
Revision 0
IRFP350LC
Electrical Characteristics @ ll = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 400 - - V VGS = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefhcient - 0.49 - V/°C Reference to 25°C, ID = 1mA
RDs(ON) Static Drain-to-Source On-Resistance - - 0.30 Q VGS = 10V, ID = 9.6A co
Vegan) Gate Threshold Voltage 2.0 - 4.0 V VDs = VGs, ID = 250pA
9ts Forward Transconductance 8.1 - - S Vros = 50V, ID = 9.6A
loss Drain-to-Souroe Leakage Current - - 25 pA VDS = 400V, VGS = 0V
- - 250 VDS = 320V, VGS = OV, T: = 125°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
Qg Total Gate Charge - - 76 ID = 16A
Qgs Gate-to-Source Charge - - 20 nC I/os = 320V
di Gate-to-Drain ("Miller") Charge - - 37 I/ss = 10V, See Fig. 6 and 13 G)
tuion) Turn-On Delay Time - 14 - VDD = 200V
tr Rise Time - 54 - ns ID = 16A
tum) Turn-Off Delay Time - 33 - Rs = 6.29
tr Fall Time - 35 - Ro = 12n, See Fig. 10 ©
LD Internal Drain Inductance - 5.0 - Between Igad, D
nH 6mm (0.25in.)
LS Internal Source Inductance - 13 - from package a J
and center of die contact I
Ciss Input Capacitance - 2200 - VGS = 0V
Coss Output Capacitance - 390 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 31 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol #2“;
(Body Diode) - - 16 A showing the ii" Hm
ISM Pulsed Source Current integral reverse 'UP, " 1 jc','
(Body Diode) OD - - 64 p-n junction diode. Hg ',
Vso Diode Fowvard Voltage - - 1.6 V To = 25°C, Is = 16A, VGs = 0V 6)
trr Reverse Recovery Time - 440 660 ns To = 25°C, IF = 16A
Qrr Reverse Recovery Charge - 4.1 6.2 pC di/dt = 100/Vps 0)
ton Forward Tum-On Time Intrinsic tumon time is negligible (tum-on is dominated by L S+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See rg. 11 )
© VDD = 25V, starting To = 25°C, L = 2.7mH
Rs = 259, IAS = 16A. (See Figure 12)
(3 Isro 5 16A, di/dt f 200Alps, VDD S V(BR)DSS1
Tu f 150°C
© Pulse width s: 300ps; duty cycle 3 2%.
