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IRFP31N50LIRN/a968avai500V Single N-Channel HEXFET Power MOSFET in a TO-247AC package


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IRFP31N50L
500V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
International
TOR Rectifier
SMPS MOSFET
PD - 94081A
IRFP31N50L
Applications HEXFET@ Power MOSFET
. Zero Voltage Switching SMPS
0 Telecom and Server Power Supplies VDSS RDS(on) typ. Trr typ.
o Uninterruptible Power Supplies 500V 0.15Q 170ns 31A
. Motor Control applications
Features and Benefits
0 SuperFast body diode eliminates the need for external
diodes in ZVS applications.
0 Lower Gate charge results in simpler drive requirements.
q Enhanced dv/dt capabilities offer improved ruggedness.
Higher Gate voltage threshold offers improved noise
immunity. TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, I/cs @ 10V 31
ID @ TC = 100°C Continuous Drain Current, I/ss @ 10V 20 A
G, Pulsed Drain Current (D 124
PD ©Tc = 25°C Power Dissipation 460 W
Linear Derating Factor 3.7 W/°C
VGS Gate-to-Source Voltage I30 V
dv/dt Peak Diode Recovery dv/dt © 19 V/ns
T: Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw 10lb-in (1.1N-m)
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current - - 31 MOSFET symbol
(Body Diode) A showing the
ISM Pulsed Source Current - - 124 integral reverse
(Body Diode) co p-n junction diode.
VSD Diode Forward Voltage - - 1.5 V T: = 25''C, Is = 31A, VGS = 0V ©
trr Reverse Recovery Time - 170 250 ns To = 25°C, IF = 31A
- 220 330 Tu-- 125°C, di/dt = 100A/ps ©
Qrr Reverse Recovery Charge - 570 860 nC TJ = 25°C, Is = 31A, VGS = 0V (9
- 1.2 1.8 PC Tu-- 125°C, di/dt = 100/Vps ©
IRRM Reverse Recovery Current - 7.9 12 A T J = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

07/18/03
IRFP31N50L
International
Static © T J = 25°C (unless otherwise specified) TOR Rectifier
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)D$$ Drain-to-Source Breakdown Voltage 500 - - V VGS = 0V, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.28 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance 0.15 0.18 Q VGS = 10V, ID = 19A (0
Vesah) Gate Threshold Voltage 3.0 - 5.0 v Vos = v68, ID = 250pA
loss Drain-to-Source Leakage Current - - 50 pA Vos = 500V, VGs = 0V
- - 2.0 mA vDs = 400v, I/ss = 0v, Tu = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 30V
Gate-to-Source Reverse Leakage - - -100 I/ss = -30V
Rs Internal Gate Resistance - 1.1 - Q f= 1MHz, open drain
Dynamic ti) Tu = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gts Forward Transconductance 15 - - S VDS = 50V, ID = 19A
09 Total Gate Charge - - 210 ID = 31A
095 Gate-to-Source Charge - - 58 nC VDs = 400V
di Gate-to-Drain ("Miller") Charge - - 100 Ves = 10V, See Fig. 7 & 15 (g)
td(on) Turn-On Delay Time - 28 - vDD = 250V
t, Rise Time - 115 - ns ID = 31A
tam) Turn-Off Delay Time - 54 - Rs = 4.39
t, Fall Time - 53 - VGS = 10V, See Fig. 14a & 140 (D
Ciss Input Capacitance - 5000 - VGS = 0V
Cass Output Capacitance - 553 - VDs = 25V
Crss Reverse Transfer Capacitance - 59 - f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 6630 - pF VGS = OV, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 155 - VGS = 0V, Vos = 400V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 276 - Vss = OV,Vos = OV to 400V s
C055 eff. (ER) Effective Output Capacitance - 200 -
(Energy Related)
Avalanche Characteristics
Parameter
Thermal Resistance
Symbol Parameter Typ. Max. Units
ROJC Junction-to-Case - 0.26
Recs Case-to-Sink, Flat, Greased Surface 0.24 -- “C/W
Rm Junction-to-Ambient - 40
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
© Starting To = 25°C, L =1mH, Rs = 259,
IAS-- 31A (See Figure 12).
© ISD = 31A, di/dt s: 422A/ps, VDD I V(BR)DSSY
Tus 150°C.
© Pulse width 5 300ps; duty cycle 3 2%.
6) Coss eff. is a fixed capacitance that gives the same charging time
as Coss while I/rss is rising from 0 to 80% Voss.
Coss eff.(ER) is a fixed capacitance that stores the same energy
as Coss while VDS is rising from O to 80% Voss-
2
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