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IRFP26N60L
600V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
PD - 94611
It ti l
':fliiilTgl(1lfi)rile-l SMPSMOSFET IRFP26N60L
Applications HEXFET@ Power MOSFET
. Zero Voltage Switching SMPS
. Telecom and Server Power Supplies VDSS RDS(0n) typ. Trr typ. ID
. Uninterruptible Poyerfupplies 600V 210mQ 170ns 26A
q Motor Control applications
Features and Benefits "Irs
o SuperFast body diode eliminates the need for external ('ii':i'ti'
diodes in ZVS applications. T
q Lower Gate charge results in simpler drive requirements.
q Enhanced dv/dt capabilities offer improved ruggedness.
. Higher Gate voltage threshold offers improved noise immunity. TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vas @ 10V 26
ID @ To = 100°C Continuous Drain Current, Vss © 10V 17 A
IDM Pulsed Drain Current co 100
PD @TC = 25°C Power Dissipation 470 W
Linear Derating Factor 3.8 W/°C
VGS Gate-to-Source Voltage _+30 V
dv/dt Peak Diode Recovery dv/dt © 21 V/ns
Tu Operating Junction and -55 to + 150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 1.1(10) Nm, (lbf'in)
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 26 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 100 integral reverse G
(Body Diode) co p-n junction diode. S
VSD Diode Forward Voltage - - 1.5 V TJ = 25°C, ls = 26A, VGS = 0V ©
trr Reverse Recovery Time - 170 250 ns TJ = 25°C, IF = 26A
- 210 320 To = 125°C, di/dt = 100A/ps ©
Qrr Reverse Recovery Charge - 670 1000 nC TJ = 25°C, ls = 26A, VGS = 0V ©
- 1050 1570 To = 125°C, di/dt = 1OOA/ps ©
IRRM Reverse Recovery Current - 7.3 11 A TJ = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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12/30/02
IRFP26N60L
International
TOR Rectifier
Static © T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 600 - - V Vss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient -- 0.33 - V/°C Reference to 25°C, lo = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 210 250 mf2 Vos = 10V, ID = 16A ©
VGS(1h) Gate Threshold Voltage 3.0 - 5.0 v Vos = Vas, b = 250pA
loss Drain-to-Source Leakage Current - - 50 HA Vos = 600V, Vss = 0V
- - 2.0 mA Vos = 480V, Vss = 0V, T: = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 30V
Gate-to-Source Reverse Leakage - - -1OO Ves = -30V
He Internal Gate Resistance - 0.8 - n f = 1MHz, open drain
Dynamic © T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 13 - - S Vos = 50V, ID = 16A
09 Total Gate Charge - - 180 lo = 26A
As Gate-to-Source Charge - - 61 n0 I/os = 480V
di Gate-to-Drain ("Miller") Charge - - 85 I/ss = 10V, See Fig. 7 & 15 Cw)
td(on) Turn-On Delay Time - 31 - VDD = 300V
t, Rise Time - 110 - ns ID = 26A
tum") Turn-Off Delay Time - 47 - Rs = 4.39
tr Fall Time -r._- 42 - Ves =10V, See Fig. 11a &11b ©
Ciss Input Capacitance -- 5020 - Vss = 0V
Cass Output Capacitance - 450 - Vos = 25V
Crss Reverse Transfer Capacitance - 34 - pF f = 1.0MHz, See Fig. 5
Cass eff. Effective Output Capacitance - 230 - Ves = 0V,VDs = 0V to 480V S
Coss eff. (ER) Effective Output Capacitance - 170 -
(Energy Related)
Avalanche Characteristics
Symbol Parameter
EAS ng u v e nergy
IAR e u
EAR v nergy
Thermal Resistance
Symbol Parameter Typ. Max. Units
Rax: Junction-to-Case - 0.27
Recs Case-to-Sink, Flat, Greased Surface 0.24 - 'tFtl
RSJA Junction-to-Ambient - 40
Notes:
© Pulse width f 300ps; duty cycle 3 2%.
(9 Coss eff. is a fixed capacitance that gives the same charging time
as Coss while Vos is rising from Oto 80% Voss.
Coss eff.(ER) is a fixed capacitance that stores the same energy
as Coss while Vos is rising from 0 to 80% Voss-
co Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
© Starting T; = 25°C, L =1.7mH, Rs = 259,
IAS = 26A, dv/dt = 21V/ns. (See Figure 12a)
© Iso S 26A, di/dt S 480A/ps, Voo S V(BR)DSS!
To f 150°C.
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