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IRFP260M-IRFP260MPBF
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC Series M package
International
TOR Rectifier
Description
Fifth Generation HEXFETs from International Rectifierutilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commerciaI-industrial applications where
higher power levels preclude the use of TO-22O devices. The TO-247 is similar
but superiorto the earlierTO-218 package because of its isolated mounting hole.
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Ease of Paralleling
Simple Drive Requirements
Lead-Free
PD - 96293
IIRFP260MPbF
HEXFET® Power MOSFET
VDSS = 200V
A RDS(on) = 0.049
ID = 50A
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, I/ss @ 10V 50
ID @ To = 100°C Continuous Drain Current, Vas © 10V 35 A
IDM Pulsed Drain Current co 200
PD @Tc = 25°C Power Dissipation 300 W
Linear Derating Factor 2.0 W/°C
Vss Gate-to-Source Voltage t20 V
EAS Single Pulse Avalanche Energy© 560 mJ
IAR Avalanche CurrentCD 50 A
EAR Repetitive Avalanche Energy© 30 mJ
dv/dt Peak Diode Recovery dv/dt © 10 V/ns
To Operating Junction and -55 to +175
Tsms Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Fkuc Junction-to-Case - 0.50
Recs Case-to-Sink, Flat, Greased Surface 0.24 - °C/W
ReJA Junction-to-Ambient - 40
1
03/01/10
IRFP260MPbF
International
IEER Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 - - V Vas = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.26 - V/°C Reference to 25°C, ID = 1mA
Rosmn) Static Drain-to-Source On-Resistance - - 0.04 Q I/ss = 10V, ID = 28A ©
Vsam) Gate Threshold Voltage 2.0 - 4.0 V VDs = Vas, ID = 250PA
gfs Forward Transconductance 27 - - S VDs = 50V, ID = 28A 6)
loss Drain-to-Source Leakage Current - - 25 pA VDS = 200V, Vas = 0V
- - 250 Vos = 160V, Vas = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
th Total Gate Charge - - 234 lo = 28A
095 Gate-to-Source Charge - - 38 nC VDs = 160V
di Gate-to-Drain ("Miller") Charge - - 110 Vas = 10V ©
td(on) Turn-On Delay Time - 17 - VDD = 100V
tr Rise Time - 60 - ID = 28A
td(ott) Turn-Off Delay Time - 55 - ns Rs = 1.89
tf Fall Time - 48 - Vss = 10V C4)
Lo Internal Drain Inductance -- 5.0 - Between Cr") D
M 6mm (0.25m.) Q: )
from package G
Ls Internal Source Inductance - 13 - .
and center of die contact s
Ciss Input Capacitance - 4057 - l/ss = 0V
Coss Output Capacitance - 603 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 161 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 50 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode)® - - 200 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 28A, Vai; = 0V ©
trr Reverse Recovery Time - 268 402 ns Tu = 25°C, IF = 28A
a,, Reverse Recovery Charge - 1.9 2.8 “C di/dt = 100A/ps GD
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
(D Repetitive rating; pulse width limited by
max. junction temperature.
C) Starting Tu = 25°C, L = 1.5mH
Rs = 25Q, IAS = 28A.
TJs175°C
© ISO S 28A, di/dt S 486A/ps, VDD S V(BR)DSS,
GD Pulse width S 400us; duty cycle 3 2%.
