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IRFP244PBF IR|International Rectifier N/a 12000 HEXFET® Power MOSFET



IRFP250 HAR,FeaturesPower MOSFET• 33A, 200VThis N-Channel enhancement mode silicon gate power field = 0.085Ω•rDS(ON)effect transistor is an advanced power MOSFET ..
IRFP250 H,ABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 200 VDS GSV Drain-gate Voltage (R = 20 kΩ) 200 VDGR GSV Gate- sourc ..
IRFP244PBF , HEXFET® Power MOSFET
IRFP250 ,33A, 200V, 0.085 Ohm, N-Channel Power MOSFETPD-9.443D International EOR Rectifier IRFP250 HEXFETO Power MOSFET 0 Dynamic dv/dt Rating ..
IRFP250A ,200V N-Channel A-FET / Replaced by IRFP250BFEATURESBV = 200 VDSS Avalanche Rugged TechnologyR = 0.085 ΩDS(on) Rugged Gate Oxide ..
IRFP250MPBF ,200V Single N-Channel HEXFET Power MOSFET in a TO-247AC Series M packagePD - 96292IRFP250MPbF®HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt RatingDV = 20 ..
IRFP250N ,N-Channel Power MOSFET 200V, 30A, 0.075-Ohmapplications.The TO-247 package is preferred for commercial-industrial
ISL6561IRZ , Multi-Phase PWM Controller with Precision Rds(on) or DCR Differential Current Sensing for VR10.X Application
ISL6561IRZ-T , Multi-Phase PWM Controller with Precision Rds(on) or DCR Differential Current Sensing for VR10.X Application
ISL6562CB ,Microprocessor CORE Voltage Regulator Two-Phase Buck PWM ControllerFeaturesTwo-Phase Buck PWM Controller• Two-Phase Power ConversionThe ISL6562 two-phase current mode ..
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