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IRFP23N50L |IRFP23N50LIR N/a2000avai500V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
IRFP23N50LPBFIRN/a50avai500V Single N-Channel HEXFET Power MOSFET in a TO-247AC package


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IRFP23N50L -IRFP23N50LPBF
500V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
International
TOR Rectifier
Applications
SMPS MOSFET
PD - 94230B
IRFP23N50L
HEXFET@ Power MOSFET
. Zero Voltage Switching SMPS V R T
. t . rr typ. I
. Telecom and Server Power Supplies DSS DS(on) yp D
. Uninterruptible Power Supplies 500V 0.190Q 170ns 23A
0 Motor Control applications
Features and Benefits
. SuperFast body diode eliminates the need for external
diodes in ZVS applications.
0 Lower Gate charge results in simpler drive requirements.
Enhanced dv/dt capabilities offer improved ruggedness.
Higher Gate voltage threshold offers improved noise
. . TO-247AC
immunity.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 23
ID @ Tc = 100°C Continuous Drain Current, I/ss @ 10V 15 A
G, Pulsed Drain Current (D 92
Pro @Tc = 25°C Power Dissipation 370 W
Linear Derating Factor 2.9 W/°C
VGs Gate-to-Source Voltage , 30 V
dv/dt Peak Diode Recovery dv/dt © 14 V/ns
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw 10lb"m(1.1N'm)
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 23 MOSFET symbol A D
(Body Diode) A showing the i_'rrac-
ISM Pulsed Source Current - - 92 integral reverse G &
(Body Diode) C) p-n junction diode. R
VSD Diode Forward Voltage - - 1.5 V To = 25°C, ls = 14A, VGs = 0V ©
trr Reverse Recovery Time - 170 250 ns TJ = 25°C, IF = 23A
- 220 330 TJ = 125°C, di/dt = 100A/ps (D
Qrr Reverse Recovery Charge - 560 840 nC To = 25°C, ls = 23A, VGS = 0V ©
- 980 1500 Tu = 125°C, di/dt = 100A/ps ©
IRRM Reverse Recovery Current - 7.6 11 A To = 25°C
ton Fon/vard Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
1
07/18/03
IRFP23N50L
International
Static @ T J = 25°C (unless otherwise specified) TOR Rectifier
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 500 - - V I/ss = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - 0.27 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 0.190 0.235 Q Vss = 10V, ID = 14A (9
VGS(m) Gate Threshold Voltage 3.0 - 5.0 V VDS = Vas, ID = 250pA
loss Drain-to-Source Leakage Current - - 50 “A VDS = 500V, I/ss = 0V
- - 2.0 mA VDS = 400V, I/ss = 0V, To = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 30V
Gate-to-Source Reverse Leakage - - -100 Vss = -30V
Re Internal Gate Resistance - 1.2 - Q f= 1MHz, open drain
Dynamic @ To = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 12 - - S l/rss = 50V, ID = 14A
09 Total Gate Charge - - 150 ID = 23A
Q95 Gate-to-Source Charge - - 44 nC I/rss = 400V
di Gate-to-Drain ("Miller") Charge - - 72 VGS = 10V, See Fig. 7 & 15 ©
tum) Turn-On Delay Time - 26 - vDD = 250V
t, Rise Time - 94 - ns ID = 23A
tum) Turn-Off Delay Time - 53 - Rs = 6.09
tr Fall Time - 45 - VGS = 10V, See Fig. 11a &11b (CE)
Ciss Input Capacitance - 3600 - Vss = 0V
Cass Output Capacitance - 380 - VDS = 25V
Crss Reverse Transfer Capacitance - 37 - f = 1.0MHz, See Fig. 5
Cass Output Capacitance - 4800 - pF I/cs = ov, Vos = 1.0V, f = 1.0MHz
Cass Output Capacitance - 100 - VGS = 0V, Vos = 400V, f = 1.0MHz
Cass eff. Effective Output Capacitance - 220 - Vss = ON/Mas = OV to 400V (S)
Cass eff. (ER) Effective Output Capacitance - 160 -
(Energy Related)
Avalanche Characteristics
Parameter
EAR va
Thermal Resistance
Symbol Parameter Typ. Max. Units
Raw: Junction-to-Case - 0.34
Rags Case-to-Sink, Flat, Greased Surface 0.24 --- "CA/V
ROJA Junction-to-Ambient _ 40
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11).
© Starting To = 25°C, L = 1.5mH, Rs-- 259,
IAS = 23A, dv/dt = 14V/ns. (See Figure 12).
© '30 3 23A, di/dt s 430A/ps, VDD S V(BRpss,
T J 3 150°C.
2
© Pulse width 3 300ps; duty cycle f 2%.
s Coss eff. is a fixed capacitance that gives the same charging time
as Coss while Vos is rising from 0 to 80% Voss.
Coss eff.(ER) is a fixed capacitance that stores the same energy
as Coss while Vos is rising from O to 80% l/DSS.
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