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IRFP150MPBF
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC Series M package
PD - 96291
|RFP15OMPbF
International
TOR Rectifier
HEXFETO Power MOSFET
. Advanced Process Technology D
. Dynamic dv/dt Rating Voss = 100V
o 175°C Operating Temperature
o Fast Switching -
. Fully Avalanche Rated G RDSW") - 00369
q Lead-Free
Description s ID - 42A
Fifth Generation HEXFETsfrom International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-247 package is preferred for commercial-
industrial applications where higher power levels
preclude the use of TO-220 devices. The TO-247 is
similar but superior to the earlier TO-218 package
because of its isolated mounting hole.
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
ID © TC = 25°C Continuous Drain Current, Ves © 10V 42
ID © TC = 100°C Continuous Drain Current, Ves @ 10V 30 A
IDM Pulsed Drain Current OTS, 140
Po @TC = 25°C Power Dissipation 160 W
Linear Derating Factor 1.1 W/“C
Ves Gate-to-Source Voltage , 20 V
EAS Single Pulse Avalanche Energy®© 420 mJ
IAR Avalanche CurrentC0S 22 A
EAR Repetitive Avalanche Energy® 16 mJ
dv/dt Peak Diode Recovery dv/dt C2S 5.0 V/ns
T., Operating Junction and -55 to + 175
TSTG Storage Temperature Range 'C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 1O lbf-in (1 .1tOm)
Thermal Resistance
Parameter Typ. Max. Units
Rac Junction-to-Case - 0.95
Rrcs Case-to-Sink, Flat, Greased Surface 0.24 - "C/W
Ram Junction-to-Ambient - 4O
1
03/01/10
IRFP150MPbF International
IEER Rectifier
Electrical Characteristics tii) To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Viim)oss Drain-to-Source Breakdown Voltage 100 - - V Vos = 0V, ID = 250pA
AVesswss/ATo Breakdown Voltage Temp. Coefficient - 0.11 - Vl°C Reference to 25°C, ID = IrnAS
Rosom Static Drain-to-Source On-Resistance - - 0.036 n l/tss = 10V, ID = 23A co
Vesun) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGs. ID = 250pA
gis Forward Transconductance 14 - - S Vos = 25V, ID = 22A©
loss Drain-to-Source Leakage Current _ : 22550 pA :12: ; :32:YV::S=_03\.ITJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A Vss = 20V
Gate-to-Source Reverse Leakage - - -100 l/ss = -20V
% Total Gate Charge - - 110 ID = 22A
ths Gate-to-Source Charge - - 15 no VDS = 80V
di Gate-to-Drain (''Miller'') Charge - - 58 Vos = 10V, See Fig. 6 and 13 ©S
Won, Turn-On Delay Time - 11 - VDD = 50V
t, Rise Time - 56 - ns ID = 22A
tam") Tum-Off Delay Time - 45 - Rs = 3.6w
tt Fall Time - 4O - R0 = 2.9N See Fig. 10 ©S
. Between lead, D
Lo Internal Drain Inductance - 5.0 - nH 6mm (0.25in.) (fi-
from package ci)
Ls Internal Source Inductance - 13 - and center of die contact s
Cas Input Capacitance - 1900 - I/ss = 0V
Coss Output Capacitance - 450 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 230 - f = 1.0MHz. See Fig. 5@
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 42 MOSFET symbol "
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) cos - - 140 p-n junction diode. S
I/so Diode Forward Voltage - - 1.3 V To = 25°C, Is =23A, Vss = 0V ©
trr Reverse Recovery Time - 180 270 ns To = 25T, IF = 22A
G, Reverse RecoveryCharge - 1.2 1.8 pC di/dt = 100A/ps G) s
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by © Pulse width 3 300ps; duty cycle g 2%.
max. junction temperature. ( See fig. 11 )
© Starting T., = 25''C, L = 1.7mH © Uses IRF'l310N data and teest conditions
Ro = 25w, IAS = 22A. (See Figure 12)
© ls, s 22A, di/dt S 180A/ps, I/oo S V(BR)DSSV
T J s: 175°C
2
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