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IRFP1405PBFIRN/a12000avai55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package


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IRFP1405PBF
55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
l . I PD - 95509A
memoh on o
152R Rectifier llRFP1405PbF
Features HEXFET® Power MOSFET
o Advanced Process Technology D
q Ultra Low On-Resistance VDSS = 55V
o 175°C Operating Temperature
q Fast Switching
o Repetitive Avalanche Allowed up to ijax G ' " RDS(on) = 5.3mQ
o Lead-Free
Description s ID = 95A
ThisHEXFET®PowerMOSFET utilizesthelatest
processing techniques to achieve extremely low
on-resistance persilicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features s
combineto make this design an extremely efficient . GD
and reliable device for use in a wide variety of
applications. TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Ves @ 10V (Silicon Limited) 160
ID @ To = 100°C Continuous Drain Current, Ves @ 10V 110 A
ID @ TC = 25°C Continuous Drain Current, Vss @ 10V (Package Limited 95
IBM Pulsed Dram Current LO 640
PD @TC = 25°C Power Dissipation 310 W
Linear Derating Factor 2.0 W/°C
l/ss Gate-to-Source Voltage t 20 V
EAS (Thermallylimited) Single Pulse Avalanche Energy© 530 m J
EAS (Tested ) Single Pulse Avalanche Energy Tested Value © 1060
IAH Avalanche Current 09 See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy © mJ
T J Operating Junction and -55 to + 175
TSTG Storage Temperature Range =
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rm Junction-to-Case * - 0.49
Recs Case-to-Sink, Flat, Greased Surface 0.24 - °C/W
ROJA Junction-to-Ambient * - 4O
HEXFET® is a registered trademark of International Rectifier.
* R9 is measured at Tu approximately 90°C
1
08/18/10

IRFP'l
Electrical Characteristics © T,, = 25°C (unless otherwise specified)
405PbF
International
TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage 55 -- -- V Vss = 0V, ID = 250pA
AV(Bn)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.058 - VPC Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 4.2 5.3 mf2 Ves = 10V, ID = 95A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS = Vas, ID = 250pA
gfs Forward Transconductance 77 - - S l/rss = 25V, ID = 95A
loss Drain-to-Source Leakage Current -- - 20 PA Vrss = 55V, Vss = 0V
- - 250 Vos = 55V, l/ss = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 200 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -200 Vas = -20V
q, Total Gate Charge - 120 180 ID = 95A
As Gate-to-Source Charge -- 30 -- nC Vos = 44V
di Gate-to-Drain ("Miller") Charge - 53 - Vss = 10V ©
td(on) Turn-On Delay Time - 12 - Vor: = 28V
t, Rise Time - 160 - ID = 95A
td(off) Turn-Off Delay Time - 140 - ns Rs = 2.6 Q
t, Fall Time -- 150 -- Ves = 10V ©
Lo Internal Drain Inductance - 5.0 - Between lead, - D
nH 6mm (0.25in.) (i",": l
Ls Internal Source Inductance - 13 - from package GAL - j
and center of die contact s
Ciss Input Capacitance -- 5600 -- Vss = 0V
Coss Output Capacitance - 1310 - Vos = 25V
Crss Reverse Transfer Capacitance - 350 - pF f = 1.0MHz
Coss Output Capacitance - 6550 - Vas = OV, Vros = 1.0V, f = 1.0MHz
Coss Output Capacitance - 920 - Vss = 0V, Vrys = 44V, f = 1.0MHz
Coss eff. Effective Output Capacitance -- 1750 -- Ves = 0V, Vos = 0V to 44V ©
Source-Drain Ratings and Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current -- - 95 MOSFET symbol D
(Body Diode) A showing the Lt
ISM Pulsed Source Current - - 640 integral reverse G E
(Body Diode) CD p-n junction diode. q
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 95A, VGS = 0V ©
tr, Reverse Recovery Time -- 70 110 ns TJ = 25°C, IF = 95A, VDD = 28V
Qrr Reverse Recovery Charge - 170 260 nC di/dt = 100A/ps OD
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
(O Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
© Limited by Tumax, starting TJ = 25°C, L = 0.12mH © Limited by TJmaX , see Fig.12a, 12b, 15, 16 for typical repetitive
Ra = 259, IAS = 95A, Vas =10V. Part not
recommended for use above this value.
co Pulse width S1.0ms;duty cycle S 2%.

avalanche performance.
© Coss eff. is a fixed capacitance that gives the same charging time
as Coss while Vrss is rising from 0 to 80% Vross .
© This value determined from sample failure population. 100%
tested to this value in production.

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