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IRFP064V
60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
PD-94112
2FP064V
HEXFET© Power MOSFET
Advanced Process Technology D
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature . .
Fast Switching G
Fully Avalanche Rated
Optimized for SMPS Applications s
Description
Advanced HEXFETO Power MOSFETs from International
Rectifer utilize advanced processing techniques to achieve
extremely low on-resistance persilicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designerwith an extremely efficient ' 1%,
and reliable device for use in a wide variety ofapplications. "
International
TOR Rectifier
VDSS = 60V
RDS(on) = 5.5mn
ID = 130A©
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use
of TO-220 devices. The TO-247 is similar but superior to
the earlier TO-218 package because of its isolated
mounting hole.
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 130©
ID @ Tc = 100°C Continuous Drain Current, Ves @ 10V 95 A
IDM Pulsed Drain Current co 520
Po @Tc = 25°C Power Dissipation 250 W
Linear Derating Factor 1.7 Wl°C
l/ss Gate-to-Source Voltage * 20 V
IAR Avalanche Currenk0 130 A
EAR Repetitive Avalanche Energy© 25 mJ
dv/dt Peak Diode Recovery dv/dt © 4.7 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
' Junction-to-Case - 0.60
Recs Case-to-Sink, Flat, Greased Surface 0.24 - °C/W
RQJA Junction-to-Ambient - 40
1
3/30/01
IRFP064V
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 - - V l/ss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.067 - V/°C Reference to 25''C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 5.5 mn VGs = 10V, ID = 78A ©
VGs(m) Gate Threshold Voltage 2.0 - 4.0 V Vos = Was, ID = 250pA
9ts Forward Transconductance 88 - - S Vos = 25V, ID = 78A©
loss Drain-to-Source Leakage Current - - 25 pA Vos = 60V, N/ss = 0V
- - 250 Vros = 48V, VGS = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A N/ss = 20V
Gate-to-Source Reverse Leakage - - -100 VGs = -20V
% Total Gate Charge - - 260 ID = 130A
ths Gate-to-Source Charge - - 68 nC Vos = 48V
di Gate-to-Drain ("Miller") Charge - - 94 N/ss = 10V, See Fig. 6 and 13
tum) Turn-On Delay Time - 26 - VDD = 30V
tr Rise Time - 200 - ns ID = 130A
tam) Turn-Off Delay Time - 100 - Rs = 4.39
tf Fall Time - 150 - VGS = 10V, See Fig. 10 ©
. Between lead, D
u, Internal Drain Inductance - 5.0 - .
nH 6mm (0.25in.) Q: )
from package G
Ls Internal Source Inductance - 13 - .
and center of die contact s
Ciss Input Capacitance - 6760 - VGs = 0V
Cass Output Capacitance - 1330 - Vos = 25V
Crss Reverse Transfer Capacitance - 290 - pF f = 1.0MHz, See Fig. 5
EAS Single Pulse Avalanche Energy© - 18806 3106) mJ lAs = 130A, L = 37pH
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) _ _ 130© A showing the
ISM Pulsed Source Current - - 520 integral reverse G
(Body Diode)© p-n junction diode. s
VSD Diode Forward Voltage - - 1.2 V TJ = 25°C, ls = 130A, VGS = 0V ©
tn Reverse Recovery Time - 94 140 ns TJ = 25°C, IF = 130A
G, Reverse Recovery Charge - 360 540 nC di/dt = 100A/ps co
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by L3+LD)
Notes:
C) Repetitive rating; pulse width limited by © Pulse width s 400ps; duty cycle S 2%.
max. junction temperature. (See Rr 11) S This is a typical value at device destruction and represents
© Starting To = 25°C, L = 260PH
operation outside rated limits.
RG = 259, IAS = 50A. (See Figure 12) © This is a calculated value limited to TJ = 175°C .
© la, S 130A, di/dt f 230A/ps, VDD f V(BR)DSS:
T J f 175°C
© Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 90A.
