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TOR Rectifier IRFP054
HEXFET® Power MOSFET
q Dynamic dv/dt Rating
..
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IRFP054-IRFP054PBF
60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
1irttetiatiipt,tall
1:212 Rectifier
PD-9.544A
lfRFP054
HEXFET® Power MOSFET
tt Dynamic dv/dt Rating
0 Isolated Central Mounting Hole
o 175°C Operating Temperature
0 Fast Switching
o Ease of Paralleling
0 Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial applications
where higher power levels preclude the use of TO-220 devices. The TO-247
is similar but superior to the earlier TO-218 package because of its isolated
mounting hole. It also provides greater creepage distance-between pins to
s ID = 70*A
Voss = 60V
RDS(on) = 0.0149
meet the requirements of most safety specifications.
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Vas @ 10 V 70*
ID @ Tc = 100°C Continuous Drain Current, I/ss @ 10 V 64 A
IDM Pulsed Drain Current co 360
Po @ To = 25°C Power Dissipation 230 W
' Linear Derating Factor 1.5 WPC
Ves Gate-to-Source Voltage 120 V
EAS Single Pulse AvaiancrdEnergy Q) 640 md
dv/dt Peak Diode Recovery dv/dt © 4.5 V/ns
To Operating Junction and -55 to +175 "e
TSTG Storage Temperature Flange "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 Ibfoin (1.1 Nun)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rmc Junction-to-Case - - 0.65
fes, 9yiy1tyfirrktlit Greased Surface - 0.24 - °C/W
Rem Junction-to-Ambient -- - 40
IRFP054 149R
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage 60 - - V Ves=0V, ID: 2500A
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.056 - V/°C Reference to 25°C, Io: 1mA
Rosa...) Static Drain-to-Source On-Resistance - - 0.014 n 'Vss---10V, b=54A ©
VGS(th) Gate Threshold Voltage 2.0 .- 4.0 V Vos=VGs, ID: 2500A
ggs Forward Transconductance 25 - -.-.. S Vos=25V, ID=54A ©
loss Drain-to-Source Leakage Current - - 25 WA Vosr--60V, Vss=OV
- _ - 250 VDs=48V, VGs=OV, TJ=150°C
less Gate-to-Source Forward Leakage - - 100 n A Ves=20V
Gate-to-Source Reverse Leakage - - -100 Vesz-20V
ch Total Gate Charge - - 160 lo=64A
Qgs Gate-to-Source Charge - - 48 nC Vns=48V
di Gate-to-Drain ("Miller") Charge - - 54 VGs=10V See Fig. 6 and 13 CE)
td(on) Turn-On Delay Time - 20 - VDD=30V
tr Rise Time - 160 - ns ID=64A
tam”) Turn-Off Delay Time - 83 - Ra--6.2n
t, Fall Time - 150 -...... RD=O.45S2 See Figure 10 ©
Lo Internal Drain Inductance - 5.0 - [3er('on.lrnd.') D
1 nH from package egg)
Ls Internal Source Inductance - 13 -- Ind center Of
die contact s
Cass Input Capacitance - 4500 - Var-UN
Coss Output Capacitance - 2000 .- pF vos: 25V
Crss Reverse Transfer Capacitance - 300 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - 70* MOSEET symbol D
(Body Diode) A showing the L,-,-'-:
E ISM Pulsed Source Current - - 360 integral feverse G :12
[ (Body Diode) Ci) p-n function diode. S
van Diode Forward Voltage - - 2.5 v TJ=25°C, ls=90A, l/ss-AN ©
tn Reverse Recovery Time - 270 540 ns TJ=25°C, lp=64A
C),, Reverse Recovery Charge - 1.1 2.2 00 dildt=100Alps ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
co Repetitive rating; pulse width limited by Cr) ISDSQOA, di/dtsZOOA/ps, VDDSV(BR)Dss,
max. junction temperature (See Figure 11) TJS175°C
Q) VDD=25V, starting TJ=25°C, L--92PH Co Pulse width s: 300 ps; duty cycle 52%.
RG=25§2, IAS=90A (See Figure 12)
* Current limited by the package, (Die Current =90A)
