IC Phoenix
 
Home ›  II31 > IRFP048N,55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
IRFP048N Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
IRFP048NN/a20avai55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package


IRFP048N ,55V Single N-Channel HEXFET Power MOSFET in a TO-247AC packagePD - 9.1409AIRFP048N®HEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingV = 55V ..
IRFP048NPBF ,55V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageapplications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar ..
IRFP054 ,60V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageapplications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar ..
IRFP054 ,60V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageapplications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar ..
IRFP054N ,55V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageapplications where higher power levels preclude the use ofTO-220 devices. The TO-247 is similar bu ..
IRFP054NPBF ,55V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageapplications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar b ..
ISL6557ACB ,Multi-Phase PWM Controller for Core-Voltage RegulationISL6557A®Data Sheet August 2003 FN9068.2Multi-Phase PWM Controller for
ISL6557CB ,Multi-Phase PWM Controller for Core-Voltage Regulationfeatures on the ISL6557 include Dynamic-VID™ • Precision Enable Thresholdtechnology allowing seamle ..
ISL6558CB ,Multi-Purpose Precision Multi-Phase PWM Controller With Optional Active Voltage PositioningISL6558®Data Sheet December 2003 FN9027.6Multi-Purpose Precision Multi-Phase PWM
ISL6558CB-T ,Multi-Purpose Precision Multi-Phase PWM Controller With Optional Active Voltage PositioningFeaturesController With Optional Active Voltage • Multi-Phase Power ConversionPositioning- 2-, 3-, ..
ISL6558CBZ , Multi-Purpose Precision Multi-Phase PWM Controller With Optional Active Voltage Positioning
ISL6558CBZA , Multi-Purpose Precision Multi-Phase PWM Controller With Optional Active Voltage Positioning


IRFP048N
55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
PD - 9.1409A
IRFP048N
HEXFET® Power MOSFET
International
TOR, Rectifier
0 Advanced Process Technology
o Dynamic dv/dt Rating VDSS = 55V
o 175°C Operating Temperature
o Fast Switching R - 0 0169
o Fully Avalanche Rated G DS(on) .
. . I = 64A
Description s D
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power . 6 [k
MOSFETs are well known for, provides the designer ca,
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-247 package is preferred for commercial-
industrial applications where higher power levels
preclude the use of TO-220 devices. The TO-247 is
similar but superior to the earlier TO-218 package
because of its isolated mounting hole.
TO-247AC
Absolute Maximum Ratings

Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGS @ 10V 64
ID @ Tc = 100°C Continuous Drain Current, Ves @ 10V 45 A
IDM Pulsed Drain Current (06) 210
PD @Tc = 25''C Power Dissipation 140 W
Linear Derating Factor 0.90 W/°C
VGS Gate-to-Source Voltage i 20 V
EAS Single Pulse Avalanche Energy©6) 270 m]
IAR Avalanche CurrenK0S 32 A
EAR Repetitive Avalanche Energy© 14 mJ
dv/dt Peak Diode Recovery dv/dt 0)6) 5.0 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rac Junction-to-Case - 1 .1
Recs Case-to-Sink, Flat, Greased Surface 0.24 - 'C/W
RQJA Junction-to-Ambient - 40
8/25/97
IRFPO48N International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V VGS = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.052 - V/°C Reference to 25°C, ID = 1mA©
RDs(on) Static Drain-to-Source On-Resistance - - 0.016 f2 VGs = 10V, ID = 37A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDs = VGs, ID = 250pA
gig Forward Transconductance 22 - - S VDs = 25V, ID = 32AS
loss Drain-to-Source Leakage Current - - 25 pA l/os = 55V, VGS = 0V
- - 250 Vos = 44V, VGS = 0V, Tu = 150°C
less Gate-to-Source Forward Leakage - - 100 n A I/ss = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
% Total Gate Charge - - 89 ID = 32A
Qgs Gate-to-Source Charge - - 20 nC VDS = 44V
di Gate-to-Drain ("Miller") Charge - - 39 VGS = 10V, See Fig. 6 and 13 ©(0
tum) Turn-On Delay Time - 11 - VDD = 28V
tr Rise Time - 78 - ns ID = 32A
tum) Turn-Off Delay Time - 32 - R3 = 5.19
tf Fall Time - 48 - RD = 0.859, See Fig. 10 ((i)6)
. Between lead, D
LD Internal Drain Inductance - 5.0 - .
nH 6mm (0.25in.) E )
Ls Internal Source Inductance - 13 - from package G
and center of die contact s
Ciss Input Capacitance - 1900 - VGs = 0V
Coss Output Capacitance - 620 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 270 - f = 1.0MHz, See Fig. 56)
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
. - - 45 . R
(Body Diode) showing the K
ISM Pulsed Source Current - - 210 A integral reverse G (tLl
(Body Diode) (OOD p-n junction diode. s
I/so Diode Forward Voltage - - 1.3 V To = 25°C, Is = 37A, I/cs = 0V (4)
trr Reverse Recovery Time - 94 140 ns To = 25°C, IF = 32A
er Reverse RecoveryCharge - 360 540 nC di/dt = 100A/ps COG)
Notes:
C) Repetitive rating; pulse width limited by © Pulse width f 300psi duty cycle C 2%.
max. junction temperature. ( See fig. 11 )
C) VDD = 25V, starting Tu = 25°C, L = 530pH s Uses IRFZ48N data and test conditions
Rs = 259, IAS = 32A. (See Figure 12)
© ISD S 32A, di/dt S 250A/ps, VDD S V(BR)DSS,
Tu S 175°C

ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED