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IRFM460SENSN/a26avai500V Single N-Channel Hi-Rel MOSFET in a TO-254AA package


IRFM460 ,500V Single N-Channel Hi-Rel MOSFET in a TO-254AA packageapplications such as switch- Simple Drive Requirementsing power supplies, motor controls, inverter ..
IRFM9140 ,-100V Single P-Channel Hi-Rel MOSFET in a TO-254AA packageapplications such as switch- Simple Drive Requirementsing power supplies, motor controls, inverter ..
IRFM9240 ,-200V Single P-Channel Hi-Rel MOSFET in a TO-254AA packageapplications such as switch- Simple Drive Requirementsing power supplies, motor controls, inverter ..
IRFML8244TRPBF ,25V Single N-Channel HEXFET Power MOSFET in a Micro 3 packagePD - 97587AIRFML8244TRPbFHEXFET Power MOSFETV 25 VDSV ± 20 VGS Max

IRFM460
500V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
PD- 907278
International
TOR, Reciilier
IRFM460
POWER MOSFET 500V, N-CHANNEL
THRU-HOLE (TO-254AA) HEXFET® MOSFETTECHNOLOGY
Product Summary
Part Number RDS(on) ID
IRFM460 0.27 n 19A . :~3%
HEXFET® MOSFET technology is the key to International
RecWer's advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state re-
sistance combined with high transConductanCe. HEXFET TO-254AA
transistors also feature all of the well-established advan-
tages of MOSFETs, such as voltage control, very fast switch- Featu res:
ing, ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
. . . a Simple Drive Requirements
mg power supplies, motor controls, inverters, choppers, n Ease of Paralleling
audio amplifiers, high energy pulse circuits, and virtually a Hermetically Sealed
any application where high reliability is required. The n Electrically Isolated
HEXFETtransistor’s totally isolated package eliminates the n D namic dv/dt Ratin
need for additional isolating material between the device a Liy ht-wei ht g
and the heatsink. This improves thermal efficiency and g g
reduces drain capacitance.
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 19
ID @ VGS = 10V, TC = 100°C Continuous Drain Current 12 A
IDM Pulsed Drain Current C) 76
PD @ TC = 25°C Max. Power Dissipation 250 W
Linear Derating Factor 2.0 W/°C
VGS Gate-to-Source Voltage 120 V
EAS Single Pulse Avalanche Energy © 1200 mJ
IAR Avalanche Current CO 19 A
EAR Repetitive Avalanche Energy (D 25 mJ
dv/dt Peak Diode Recovery dv/dt © 3.5 V/ns
TJ Operating Junction -55 to 150
TSTG Storage Temperature Range oC
Lead Temperature 300 ( 0.063 in.(1.6mm) from case for 10s)
Weight 9.3 (Typical) g
For footnotes refer to the last page
1
2/6/02
IRFM460 International
TOR Rectifier
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDss Drain-to-Source Breakdown Voltage 500 - - V VGS = 0V, ID = 1.0mA
ABVDss/ATJ Temperature Coemcient of Breakdown - 0.68 - V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State - - 0.27 Q VGS = 10V, t = 12A
Resistance - - 0.31 VGS = 10V, ID = 19A
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS = VGS, ID = 250pA
gfs Forward Transconductance 13 - - S M 1/DS > 15V, log, = 12A ©
loss Zero Gate Voltage Drain Current - - 25 VDS= 400V ,VGs=0V
- - 250 “A VDS = 400V,
VGS = 0V, TJ = 125°C
less Gate-to-Source Leakage Forward - - 100 VGS = 20V
less Gate-to-Source Leakage Reverse - - -100 nA VGS = -20V
09 Total Gate Charge - - 190 VGs =10V, ID = 19A
Qgs Gate-to-Source Charge - - 27 nC VDS =250V
di Gate-to-Drain ('Miller') Charge - - 135
td(on) Turn-On Delay Time - - 35 VDD = 250V, ID = 19A,
tr Rise Time - - 120 VGS =10V, RG = 2.359
tum) Turn-Off Delay Time - - 130 ns
tt FallTime - - 98
LS + LD Total Inductance - 6.8 - nH Measured from drain lead (6mm/
0.25in. from package) to source lead
(6mm/0.25in. from package)
Ciss Input Capacitance - 4300 - VGS = 0V, VDs = 25V
Coss Output Capacitance - 1000 - pF f= 1.0MHz
Crss Reverse Transfer Capacitance - 250 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
Is Continuous Source Current (Body Diode) - - 19 A
ISM Pulse Source Current (Body Diode) co - - 76
VSD Diode Forward Voltage - - 1.8 V Tj = 25°C, ls = 19A, VGS = 0V ©
trr Reverse Recovery Time - - 580 nS Tj = 25°C, IF = 19A, di/dt s 100A/ps
QRR Reverse Recovery Charge - - 8.1 PC VDD 3 50V @
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Tum-on speed is substantially controlled by Ls + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case - - 0.5
RthCS Case-to-Sink - 0.21 - °C/W
RthJA Junction-to-Ambient - - 48 Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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