IRFL214TR ,250V Single N-Channel HEXFET Power MOSFET in a SOT-223 packageInternational
TOR
Rectifier
PD-9.862
IRFL214
HEXFETO Power MOSFET
. Surface Mount ..
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IRFL214-IRFL214TR
250V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
PD-9.862
TlFL214
1nter1atiii.t.t,tal
TOR Rectifier
HEXFET® Power MOSFET
o Surface Mount
Available in Tape & Reel D
o Dynamic dv/dt Rating
0 Repetitive Avalanche Rated
Fast Switching
o Ease of Paralleling
0 Simple Drive Requirements
r, RDS(on) = 2.09
s ID = 0.79A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SOT-223 package is designed for surface-mounting using vapor phase,
infra red, or wave soldering techniques. Its unique package design allows for
easy automatic pick-and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance due to an enlarged
tab for heatsinking. Power dissipation of greater than 1.25W is possible in a
typical surface mount application.
SOT-223
Absolute Maximum Ratings
Parameter Max. Units
Io @ To = 25°C Continuous Drain Current, Vas © 10 V 0.79
lo a Tc = 100°C Continuous Drain Current, I/ss © 10 V 0.50 A
IDM Pulsed Drain Current Ci) 6.3
f'p @ To = 25°C Power Dissipation 3.1 W
Po © TA = 25°C Power Dissipation (PCB Mount)" 2.0
Linear Derating Factor 0.025 W /° C
Linear Derating Factor (PCB Mount)" 0.017
VGs Gate-to-Source Voltage :20 V
EAs Single Pulse Avalanche Energy © 50 m)
IAR Avalanche Current (D 0.79 A
EAR Repetitive Avalanche Energy 6) 0.31 ml
dv/dt Peak Diode Recovery dv/dt s 4.8 V/ns
El, TSTG Junction and Storage Temperature Range -55 to +150 Q C
Soldering Temperature, tor 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
ch Junction-to-PCB - -- 40 o C /W
Rios Junction-to-Ambient (PCB mount)" “J - - 60
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
IRFL214
Electrical Characteristics @ Tg = 25°C (unless otherwise specified)
Parameter Min, Typ. Max. Units Test Conditions
V(ampss Drain-to-Source Breakdown Voltage 250 -.. - V Vss=0V, lo: 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.39 - VPC Reference to 25°C, Io: 1mA
RDS(on) Static Draiin-to-Source On-Resistance - -..- 2.0 n VGs=10V, ID=0.47A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDs=VGs, Io: 2500A
gfs Forward Transconductance 0.50 - - S Vos=50V, ID=0.47A ©
loss Drain-to-Source Leakage Current - - 25 IIA Vos=250V, 1/ss=0V
- - 250 Vos=200V, l/ssc-OV, TJ:125°C
less Gate-to-Source Forward Leakage - - 100 n A Vss=20V
Gate-to-Source Reverse Leakage - - -100 VGs=-20V
th Total Gate Charge - - 8.2 |o=2.7A
Qgs Gate-to-Source Charge - - 1.8 . nC VDs=200V
di Gate-to-Drain ("Miller") Charge - - 4.5 1/tss=10V See Fig. 6 and 13 CD
tam") Turn-On Delay Time - 7.0 - 1/rm=1251/
tr Rise Time - 7.6 - n s ID--2.7A
tam) Turn-Off Delay Time - 16 - Rs=24n
tf Fall Time - 7.0 -r.._. RD=45.Q See Figure 10 ©
Lo Internal Drain Inductance - 4.0 - gfmsfa tte.') D
nH from package ii)])
Ls Internal Source Inductance - 6.0 - Ind center df
die contact s
Ciss Input Capacitance - 140 - Vtss=0V
Cass Output Capacitance - 42 - pF V95: 25V
Crss Reverse Transfer Capacitance - 9.6 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls ffnlinyfyt Source Current - - 0 79 MOSFET symbol D
(Body Diode) ' A showing the *7:
ISM Pulsed Source Current - - 6 3 integral reverse G (tLI'
(Body Diode) C) . p-n junction diode. s
Vso Diode Forward Voltage -- - 2.0 V TJ=25°C, ls=0.79A, l/ss-HN ©
trr Reverse Recovery Time - 190 390 ns TJ=25OC, |F=2.7A '
thr Reverse Recovery Charge - 0.64 1.3 wc di/dt=100A/ws (ii)
ton Forward Tum-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lo)
Notes:
(D Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
Q) Voo=50V, starting TJ=25°C, L=128mH
RG=25§2, |As=0.79A (See Figure 12)
TJS150°C
Cs IsosZJA, di/dtsi65A/ps, VDDSV(BR)DSS,
© Pulse width 3 300 ws; duty cycle C2%.
