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IRFL024ZIRN/a1766avai55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
IRFL024ZIORN/a8790avai55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package


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IRFL024Z
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
International
a:aRIectifier
Features
Advanced
Repetitive
Description
Specifically d
Ultra Low On-Resistance
150°C Operating Temperature
Fast Switching
AUTOMOTIVE MOSFET
PD - 95817
IRFL024Z
HEXFET© Power MOSFET
Process Technology
Avalanche Allowed up to Tjmax
A RDS(on) = 57.5mQ
VDSS = 55V
ID = 5.1A
esigned for Automotive applications, this
HEXFETQ Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area.
Additional features of this design are a
150°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating .These
features combine to make this design an extremely
efficientand reliable device for use in Automotive applica-
tions and a wide variety of other applications. SOT-223
Absolute Maximum Ratings
Parameter Max. Units
ID © TA = 25''C Continuous Drain Current, Vss @ 10V (Silicon Limited) I 5.1
ID @ TA = 70°C Continuous Drain Current, l/ss @ 10V C) 4.1 A
'DM Pulsed Drain Current (D 41
PD @TA = 25°C Power Dissipation © 2.8
Pro @TA = 25°C Power Dissipation 1.0 W
Linear Derating Factor (E 0.02 W/°C
VGS Gate-to-Source Voltage * 20 V
EAs (Thermally limited) Single Pulse Avalanche Energy© 13 mJ
EAS (Tested ) Single Pulse Avalanche Energy Tested Value © 32
IAF, Avalanche Current CD See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy s mJ
T J Operating Junction and -55 to + 150
TSTG Storage Temperature Range T
Thermal Resistance
Parameter Typ. Max. Units
FieJA Junction-to-Ambient (PCB mount, steady state) © - 45 °C/W
Rm Junction-to-Ambient (PCB mount, steady state) - 120
1

10/25/03
IRFL024Z
International
Electrical Characteristics © T,, = 25°C (unless otherwise specified) TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage 55 - - V VGS = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.053 - V/°C Reference to 25°C, ID = 1mA
HDS(on) Static Drain-to-Source On-Resistance - 46.2 57.5 mn I/ss = 10V, ID = 3.1A ©
Vesm.) Gate Threshold Voltage 2.0 - 4.0 V Vos = Vas, ID = 250pA
gfs Forward Transconductance 6.2 - - S Vos = 25V, ID = 3.1A
loss Drain-to-Source Leakage Current - - 20 pA Vos = 55V, I/ss = 0V
-- -- 250 Vos = 55V, l/ss = OV, Tu = 125°C
less Gate-to-Source Forward Leakage - - 200 nA I/ss = 20V
Gate-to-Source Reverse Leakage - - -200 I/ss = -20V
q, Total Gate Charge -- 9.1 14 ID = 3.1A
Qgs Gate-to-Source Charge - 1.9 - nC Vos = 44V
di Gate-to-Drain ("Miller") Charge - 3.9 - I/ss = 10V ©
td(on) Turn-On Delay Time - 7.8 - VDD = 28V
t, Rise Time - 21 - ns b = 3.1A
tum) Turn-Ott Delay Time - 30 - Rs = 53 Q
t, Fall Time - 23 - l/ss = 10V ©
Ciss Input Capacitance - 340 - I/ss = 0V
Coss Output Capacitance -.-.- 68 __- Vos = 25V
Crss Reverse Transfer Capacitance - 39 - pF f = 1.0MHz
Coss Output Capacitance - 21o - I/os = ov, Vros = 1.0V, f = 1.0MHz
COSS Output Capacitance - 55 - l/ss = 0V, VDS = 44V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 93 - I/ss = 0V, Vos = 0V to 44V (9
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current -- -- 5.1 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current -- -- 41 integral reverse G
(Body Diode) (D p-n junction diode. S
VSD Diode Forward Voltage -- -- 1.3 V TJ = 25°C, ls = 3.1A, vas = 0V ©
trr Reverse Recovery Time - 15 23 ns T., = 25°C, IF = 3.1A, VDD = 28V
Qrr Reverse Recovery Charge - 9.8 15 n0 di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
© Limited by TJmax, starting Tu = 25°C, L = 2.8mH
Rs = 2591'AS = 3.1A, Ves =10V.
Part not recommended for use above this value.
© Pulse width S 1.0ms; duty cycle s 2%.
co Cass eff. is a fixed capacitance that gives the same
charging time as Cass while VDs is rising from 0 to 80%

SLimited by TJmax , see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
©This value determined from sample failure population.
100% tested to this value in production.
®When mounted on 1 inch square copper board.
.When mounted on FR-4 board using minimum
recommended footprint.

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