IRFL014 ,60V Single N-Channel HEXFET Power MOSFET in a SOT-223 packageInternational
1:212 Rectifier
PD-9.860
IRFL014
HEXFET® Power MOSFET
q Surface Mount
..
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IRFL014-IRFL014TR
60V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
PD-9.860
International
1:212 Rectifier IRFLO14
HEXFET® Power MOSFET
o Surface Mount
o Available in Tape & Reel D -
o Dynamic dv/dt Rating VDSS - 60V
0 FastSwitching
o Ease of Paralleling
0 Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SOT-223 package is designed for surface-mounting using vapor phase,
infra red, or wave soldering techniques. Its unique package design allows for
easy automatic pick-and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance due to an enlarged
tab for heatsinking. Power dissipation of greater than 1.25W is possible in a
typical surface mount application, SOT-223
Absolute Maximum Ratings
Parameter Max. Units
to @ To = 25°C Continuous Drain Current, VGs @ 10 V 2.7
In a To = 100°C Continuous Drain Current, Vas © 10 V 1.7 y A
IDM Pulsed Drain Current co 22
Po © Tc = 25°C Power Dissipation 3.1 W
PD © TA 'er. 25°C Power Dissipation (PCB Mount)" 2.0
Linear Derating Factor 0.025 W PC
Linear Derating Factor (PCB Mount)" 0.017
Ves Gate-to-Source Voltage 120 V
EAS Single Pulse Avalanche Energy © 100 ml
dv/dt Peak Diode Recovery dv/dt o": 4.5 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to +150 o C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Min. Typ. Max. 'U_nits
Rao Junction-to-PCB - - 40 jaw
Rm Junction-to-Ambient (PCB mount)" - - 60
** When mounted on 1" square PCB (FR-4 or G-1O Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
IRFLO14
Electrical Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(amnss Drain-to-Source Breakdown Voltage 60 - - V Vas=OV, ID: 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.068 - VPC Reference to 25°C, b.-- 1mA
Roam) Static Drain-to-Source On-Resistance - - 0.20 n VGs=10V, kr=1.6A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vns=Vss, ID-- 250WA
gts Forward Transconductance 1.9 - - S Vos=25V, b=1.6A (4)
loss Drain-to-Source Leakage Current - - 25 WA Vos=60V, VGS=OV
- - 250 VDs=48V, VGs=0V, TJ=125°C
lass Gate-to-Source Forward Leakage - - 100 n A Ves=20V
Gate-to-Source Reverse Leakage - - -100 VGs=-20V
Qg Total Gate Charge - - 11 |D=10A
Qgs Gate-to-Source Charge - - 3.1 nC VDs=48V
di Gate-to-Drain ("Miller") Charge - - 5.8 Ves=10V See Fig. 6 and 13 GD
td(on) Turn-On Delay Time - 10 - VDD=30V
t, Rise Time - 50 - ns ID=10A
tum) Turn-Off Delay Time -- 13 - Re=24§2
tr Fall Time - 19 - Fio=2.7£2 See Figure 10 ©
Lo Internal Drain Inductance - 4.0 - (iht,11ei'J./gilnd.') D
nH from package GE )
Ls Internal Source Inductance - 6.0 - and center Of
die contact s
Ciss Input Capacitance m 300 - VGs=OV
Coss Output Capacitance -- 160 - pF V03: 25V
Crss Reverse Transfer Capacitance - 29 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - 2 7 MOSFET symbol D
(Body Diode) . A showing the L,-,.,
ISM Pulsed Source Current - - 22 integral reverse Cl {:L
(Body Diode) co p-n junction diode. s
Vso Diode Forward Voltage - - 1.6 V TJ=25°C, kr=2.7A, VGs=0V ©
trr Reverse Recovery Time - 70 140 ns TJ=25°C, IF=10A
Clrr Reverse Recovery Charge - 0.20 0.40 pC di/dt=1OOA/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+luo)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=25V, starting TJ=25°C, L=16mH
RG--25f2, lAs=2.7A (See Figure 12)
TJSI 50°C
© ISDS10A. di/dts90A/ws, VDDSV(Bn)Dss,
© Pulse width S 300 us; duty cycle C2%.
