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Absolute Maximum Rating
5 Parameter Max. Units
b © TC=25°C Continuous Drain Cu ..
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IRFK6H350
400V SINGLE HEXFET Power MOSFET in a TO-240AA package
Bulletin E27112
[International _
EOR Rectifier IRFK6H350,lRFK6J350
Isolated Base Power HEX-pakTM Assembly - Parallel Chip Configuration
High Current Capability.
_ UL recognised E78996.
Electrically Isolated Base Plate,
Easy Assembly into Equipment.
Description
The HEX-pakTM utilises the well-proven HEXFETTM die, combining V - 400V
low on-state resistance with high transconductance. These superior DS -
technology die are assembled by state of the art techniques into the
TO-24O package, featuring 2.5kV rms isolation and si.oli.d.M. screw RD S (on) = 50mf2
connections. The small footprint means the package IS highly suited to _
power applications where space is a premium. Available in two
versions, IRFK.H... for fast switching and IRFK.J... for oscillation ID = 75A
sensitive applications.
Absolute Maximum Rating
I Parameter Max. Units
T ID @ TC=25°C l Continuous Drain Current 75 A
l, © Tc--100% I Continuous Drain Current 48 A
bs, Pulse Drain Current 300 A C)
-PJiiy TC=25°C Maximum Power Dissipation EE - - A - - w
vss Gate-to-Source Voltage 20 V
les R.M.S. Isolation Voltage, circuit to base 2.5 j, W
:i - - - - V dperetin‘g Juicionhanbrrtiuaiange -40 to 150 oc
TSTG Storage Temperature Range q -40 to 150 oc
Thermal and Mechanical Specifications _
1 Parameter Min. Typ. -] Max. Units
ch I Junction-to-Case - - 0.20 K/W ©
Rthc_rtbe-arto-sink, smooth & greased surface _ 0.1 T--- -wNV
T C Mounting Torque +10% . (3‘)
HEXpak to Heatsink - 5 - Nm
- - Busbar to HEXpak T - _J__P_3 - Nm
Tr" - - Approximate Weight - 140 - l g h
5 - I 02
Notes:
O) - Repetitive Rating: Pulse width limited by maximum junction temperature see figure 8.
© .. Per Module. T
Q) - A mounting compound is recommended and the torque should be rechecked after a period of three
hours to allow for the spread of the compound.
IRFK6H350,IRFK6J350
Electrical Characteristics © T J = 25°C (Unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
BVDSS Drain-to-Source Breakdown 400 - - V VGS=0V, Io=1.0mA
voltage
RDSM) Static Drain-to-Source - 42 50 mn VGS=10V, lo=48A
On-State Resistance
loam) On-State Drain Current 75 - - A Vos > low") x HDs(on)max,
VGS=10V
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos--Vss, ID=1.5mA
Qs Forward Transconductance © 48 75 - S Vos > 50V, ID=48A
loss Zero Gate Voltage Drain Current - 1.5 mA Vos=Vosrnax, I/ss-HW
- 6.0 mA VGS=10V, TC=125°C.
Vos=Vnsmax x 0.8
ksss Gate-to-Source Leakage Forward - - 600 nA Vss=20V
IGSS Gate-to-Source Leakage Reverse - -600 nA Var--20V
Qg Total Gate Charge 660 820 no _ ID=75A, Vas--10V,
' Gate-to-Source Charge - 100 125 nC Vos=Vosmax x 0.8
di Gate-to-Drain ("Miller") Charge 275 400 nC
tdm) Turn-on Delay Time IRFK6H350 - 55 - ns VDD=1aov, |D:48A,
IRFK6J350 - 65 - ns
t, Rise Time IRFK6H350 55 ns Var10V,
IRFK6J350 - 70 - ns
tdmn) Turn-oft Delay Time IRFK6H350 - 300 - ns RSOURCE=33£1
IRFK6J350 400 - ns
t, Fall Time IRFK6H350 - 70 ns
IRFK6J350 - 110 - ns
Los Drain-to-Source lnductance 18 .. nH
Ciss Input Capacitance - 16.3 - nF VGS=OV, VDS=25V.
Cms Output Capacitance - 3.8 - nF f=1.0MH2
Crss Reverse Transfer Capacitance . - 2.0 - nF
Linear Dearating Factor - 5 W/K
Source-Drain Diode Ratings and Characteristics
- Parameter Min. Typ. Max. Units Test Conditions
IS Continuous Source Current - 75 A
(Body Diode)
ISM Pulsed Source Current 260 A
(Body Diode)
Vso Diode Forward Voltage - 1.6 V VGS=0V, ls-- 75A, TC=25°C
tr, Reverse Recovery Time 180 400 880 ns di/dt=400A/ps, T J=150°C
0,, Reverse Recovered Charge 12.0 30.0 70.0 pC IS=75A
Notes:
(4) - Pulse Width Lt 300ps; Duty cycle S 2%.
