IRFK4H250 ,200V SINGLE HEXFET Power MOSFET in a TO-240AA packageapplications.
Absolute Maximum Rating
Parameter - Max. Units
ID © TC=25°C Continuous Drain Curre ..
IRFK4H350 ,400V SINGLE HEXFET Power MOSFET in a TO-240AA packageBulletin E27106
International
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IRFK4H350+ ,400V SINGLE HEXFET Power MOSFET in a TO-240AA packageapplications.
Vias = 400V
RDS(on) = 75mQ
Absolute Maximum Rating
Parameter Max. _Uni_ts - ..
IRFK4H450 ,500V SINGLE HEXFET Power MOSFET in a TO-240AA packageBulletin E27107
International
TOR Rectifier IRFK4H450,lRFK4J450
Isolated Base Power HEX-pakT ..
IRFK4H450+ ,500V SINGLE HEXFET Power MOSFET in a TO-240AA packageapplications.
Absolute Maximum Rating
Parameter Max. T Units
b @ TC=25°C Continuous Drain Cu ..
IRFK4J350+ ,ISOLATED BASE POWER HEX PAK ASSEMBLY PARALLEL CHIP CONFIGURATIONapplications.
Vias = 400V
RDS(on) = 75mQ
Absolute Maximum Rating
Parameter Max. _Uni_ts - ..
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IRFK4H250
200V SINGLE HEXFET Power MOSFET in a TO-240AA package
ilnternatiiontg
Rectifier
Bulletin E27105
IRFK4H250,lRFK4J250
Isolated Base Power HEX-pakTM Assembly - Parallel Chip Configuration
High Current Capability.
UL recognised E78996.
Electrically Isolated Base Plate.
Easy Assembly into Equipment.
Description
The HEr-roakTMytilises the wgn-proven HEXFETTM die, combining V - 200V
low on-state resistance with high transconductance. These superior DS -
technology die are assembled by state of the art techniques into the
TO-240_package, featuring 2/ik.1/ rms isolation and splidlMS screw RDS(on) = 21 m n
connections. The small footprint means the package IS highly suited to
power applications where space is a premium. Available in two
versions, IRFK.H... for fast switching and IRFK.J... for oscillation ID = 108A
sensitive applications.
Absolute Maximum Rating
Parameter - Max. Units
ID @ TC=25°C Continuous Drain Current 108 A
lo © Tc=100oC Continuous Drain Current 68 A
bs, Pulse Drain Current 432 A co
PD @ TC=25°C Maximum Power Dissipation 500 W
vss Gate-to-Source Voltage 20 V
VINS R.M.S. Isolation Voltage, circuit to base 2.5 W
T J Operating Junction Temperature Range -40 to 150 oc
TSTG Storage Temperature Range MO to 150 oc
Thermal and Mechanical Specifications
Parameter Min. Typ. Max. Units
RING Junction-to-Case 0.25 W ©
Rthcs G-ata-si/csv-mar, & greased surface 0.1 W
T Mounting Torque +10% ©
HEXpak to Heatsink 5 Nm
Busbar to HEXpak __5_____h______ 3 __lt1
wt Approximate Weight - 140 g
Notes:
C) - Repetitive Rating: Pulse width limited by maximum junction temperature see figure 8.
Cf) - Per Module.
© - A mounting compound is recommended and the torque should be rechecked after a period of three
hours to allow for the spread of the compound.
IRFK4H250,lRFK4J250
Electrical Characteristics © T J = 25°C (Unless otherwise specified)
Parameter Min. pr. Max. I Units Test Conditions
Bvoss Drain-to-Source Breakdown 200 V Vss=OV, |D=1.0mA
voltage
RDS(on) Static Drain-to-Source 18 21 mil VGS=10V, |D=34A
__‘On-State 1etisiiar_ntt ----_-_, - 2
[Mom On-State Drain Current 108 - - A Vos > |D(0n) x RDS(0n)max,
I Vss=10V -
VGS(lh) Gate Threshold Voltage 2.0 4.0 V Vos=Vss, b=1.0mA
-ge,- - - " FaFaaTrTvaorTdrctGce7 ---- Ks - -75- - : “s - @5531. ID=68A
IDSS Zero Gate Voltage Drain Current I 1.0 mA VDS=VDSmax, Vss--0v
4.0 mA VGS=10V, Tc=125°0.
l VDS=VDsmax x 0.8
less _ Gate-to-Source Leakage Forward " 400 nA VGS=20V
Kass Gate-to-Source Leakage Reverse - -400 nA Vss---20V
09 Total Gate Charge 350 500 " b=108A, Vss=10V,
lugs Gate-to-Source Charge - 50 85 n0 VDS=VDSmax x 0.8
di Gate-to-Drain ("Miller") Charge - 175 l 260 nC
tdwn) Turn-on Delay Time [ IRFK4H250 - 65 - n WDE9W.E=68A.
_ IRFK40250 - 75 - ns -
t, Rise Time IRFK4H250 --__2_0C_-, ns VGS=10V,
IRFK4J250 - 250 - ns
tow) Turn-off Delay Time IRFK4H250 - 230 - ns RsouncE=3-3Q
IRFK4J250 - 300 - ns
l Fall Time IRFK4H250 - 75 ns
IRFK4J250 100 - ns
-Cs" Drain-to-Source Inductance - 18 nH
ciss l Input Capacitance - 13.0 - nF Vas=OV, Vos=25V,
Coss --- 1hrtry_t Capacitance l 3.6 nF f=1.0MHz
Crss Reverse Transfer Capacitance - 1.0 nF
Linear Deraiing Factor _ - 4 W/K
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max Units Test Conditions
IS Continuous Source Current - - 108 A
(Body Diode) _ -
ISM Pulsed Source Current - - _-_ _ _ -ayT - T _ -
(Body Diode)
VSD Diode Forward Voltage 2.0 V VGS=0V, ' 108A, TC=25°C
tr, Reverse Recovery Time 140 300 630 ns dildt=400A/us, T J=150°C
Q,, Reverse Recovered Charge 7.2 16.0 34.0 no IS=108A
Notes:
@ - Pulse Width s 300ps; Duty cycle s: 2%.
