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IRFIZ46NIRN/a6000avai55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package


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IRFIZ46N
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
International
TOR, Rectifier
o Advanced Process Technology
0 Isolated Package
o High Voltage Isolation = 2.5KVRMS G)
o Sink to Lead Creepage Dist. = 4.8mm
o Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectiher
utilize advanced processing techniques to achieve the
lowest possible on-resistance persilicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commerciaI-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Absolute Maximum Ratings
PD - 9.1306A
IRFlZ46N
HEXFET© Power MOSFET
VDSS = 55V
H- af RDS(on) = 0.0209
s ID = 33A
TO-220 FULLPAK

Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGS @ 10V 33
ID @ To = 100°C Continuous Drain Current, VGS @ 10V 23 A
IDM Pulsed Drain Current C06) 180
PD @Tc = 25°C Power Dissipation 45 W
Linear Derating Factor 0.3 W/°C
VGS Gate-to-Source Voltage 120 V
EAs Single Pulse Avalanche Energy ©© 230 mi
IAR Avalanche CurrentC)© 16 A
EAR Repetitive Avalanche EnergyO© 4.5 mJ
dv/dt Peak Diode Recovery dv/dt ©© 5.0 V/ns
T: Operating Junction and -55 to + 175
TSTG Storage Temperature Range (
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbf-in (1 .1N'm)
Thermal Resistance
Parameter Min. Typ. Max. Units
ReJC Junction-to-Case - - 3.3
RNA Junction-to-Ambient - - 65 ''CIW
8/25/97
I RFIZ46N International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V VGS = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.017 - V/°C Reference to 25°C, b = 1mA©
RDs(on) Static Drain-to-Source On-Resistance - - 0.020 n VGs = 10V, ID = 19A co
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDs = VGs, ID = 250pA
gfs Forward Transconductance 16 - - S VDs = 25V, ID = 28A©
I Drain-to-Source Leaka e Current - - 25 A VDS = 55V, VGS = 0V
DSS g - - 250 p Vos = 44V, VGS = 0v, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGs = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
q, Total Gate Charge - - 61 ID = 28A
As Gate-to-Source Charge - - 13 nC VDs = 44V
Ogd Gate-to-Drain ("Miller") Charge - - 24 VGS = 10V, See Fig. 6 and 13 ©©
tum”) Turn-On Delay Time - 12 - VDD = 28V
tr RiseTime - 80 - ID = 25A
tam) Turn-Off Delay Time - 43 - ns Rs = 129
tf FallTime - 52 - RD = 0.989, See Fig. 10 ©©
LD Internal Drain Inductance - 4.5 ' - Between lead, D
nH 6mm (0.25in.) Q: )
trom package G
Ls Internal Source Inductance - _ 7.5 - and center of die contact s
Ciss Input Capacitance - 1500 - VGs = 0V
Coss Output Capacitance - 450 - pF _ Vos = 25V
Crss Reverse Transfer Capacitance - 160 - f = 1.0MHz, See Fig. 5©
C Drain to Sink Capacitance - 12 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 33 MOSFET symbol D
(Body Diode) A showing the H2:
13M Pulsed Source Current . - - 180 integral reverse G E
(Body Diode) (OO) p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V T: = 25°C, Is = 19A, VGS = ov 69
trr Reverse Recovery Time - 72 110 ns TJ = 2YC, IF = 28A
Qrr Reverse Recovery Charge - 210 310 nC di/dt = 100A/ps (4)6)
Notes:
C) Repetitive rating; pulse width limited by Q) VDD = 25V, starting TJ = 25°C, L = 410pH
max. junction temperature. ( See fig. 11 ) Re = 259, IAS = 28A. (See Figure 12)
© ISD S 28A, di/dt S 240A/ps, VDD S V(BR)DSSa © Pulse width S 300ps; duty cycle S 2%.
T J f 175°C
s t=60s, f=60Hz © Uses IRFZ46N data and test conditions

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