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IRFIZ24N-IRFIZ24NPBF
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
PD - 9.1501A
IRFIZ24N
HEXFET® Power MOSFET
International
TOR, Rectifier
Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS s
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated G
Description
Fifth Generation HEXFETs from International Rectifier S
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
VDSS = 55V
RDS(on) = 0.079
|D=14A
The TO-220 F ullpak eliminates the need for additional
insulating hardware in commercial-industrial
applications. The moulding compound used provides
a high isolation capability and a Iowthermal resistance
between the tab and external heatsink. This isolation
is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to
a heatsink using a single clip or by a single screw
TO-220 FULLPAK
fixing.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, Ves @ 10V 14
ID @ Tc = 100°C Continuous Drain Current, I/ss @ 10V 10 A
IDM Pulsed Drain Current COO) 68
PD @Tc = 25°C Power Dissipation 29 W
Linear Derating Factor 0.19 W/°C
VGS Gate-to-Source Voltage i 20 V
EAS Single Pulse Avalanche Energy©© 71 m]
IAR Avalanche Current0D© 10 A
EAR Repetitive Avalanche Energy00 2.9 mJ
dv/dt Peak Diode Recovery dv/dt ©© 5.0 V/ns
T: Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJc Junction-to-Case - 5.2 o
RNA Junction-to-Ambient - 65 C/W
8/25/97
IRFlZ24N International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V VGS = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.052 - V/°C Reference to 25°C, ID = 1mA©
RDs(on) Static Drain-to-Source On-Resistance - - 0.07 n VGs = 10V, ID = 7.8A ©
VGs(th) Gate Threshold Voltage 2.0 - 4.0 V Ws = VGs, ID = 250pA
git Forward Transconductance 4.5 - - S VDS = 25V, ID = 10A©
loss Drain-to-Source Leakage Current - - 25 pA VDS = 55V, VGS = 0V
- - 250 VDS = 44V, VGS = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGs = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
Qg Total Gate Charge - - 20 ID = 10A
Qgs Gate-to-Source Charge - - 5.3 nC 1hos = 44V
' Gate-to-Drain ("Miller") Charge - - 7.6 VGs = 10V, See Fig. 6 and 13 ©©
Gon) Turn-On Delay Time - 4.9 - VDD = 28V
tr Rise Time - 34 - ns ID = 10A
td(off) Turn-Off Delay Time - 19 - Rs = 249
tr Fall Time - 27 - RD = 2.69, See Fig. 10 C06D
. Between lead, D
LD Internal Drain Inductance - 4.5 - .
nH 6mm (0.25in.) E )
Ls Internal Source Inductance -- 7 5 - from package G
. and center of die contact s
Ciss Input Capacitance - 370 - VGs = 0V
Coss Output Capacitance - 140 - pF VDS = 25V
Crss Reverse Transfer Capacitance - 65 - f = 1.0MHz, See Fig. 5©
C Drain to Sink Capacitance - 12 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 14 MOSFET symbol D
(Body Diode) showing the __,
A . ix
ISM Pulsed Source Current integral reverse G E
(Body Diode) C069 - - 68 p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 7.8A, VGS = 0V ©
trr Reverse Recovery Time - 56 83 ns TJ = 25°C, IF = 10A
G, Reverse RecoveryCharge - 120 180 pC di/dt = 100A/ps@©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by G) Pulse width I 300ps; duty cycle 3 2%.
max. junction temperature. ( See fig. 11 )
© VDD = 25V, starting Tu = 25°C, L = 1.0mH s t=60s, f=60Hz
Re: 250, IAS-- 10A. (See Figure 12)
© ISD f 10A, di/dt g 280A/ps, VDD g V(BR)DSS: © Uses IRFZ24N data and test conditions
T J 3 175°C
