IRFIB7N50APBF ,500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageApplicationsV Rds(on) max IDSS Dl Switch Mode Power Supply ( SMPS )500V 0.52Ω 6.6Al Uninterruptable ..
IRFIB8N50K ,500V Single N-Channel HEXFET Power MOSFET in a TO-220FullPak packageApplicationsV R typ. IDSS DS(on) D Switch Mode Power Supply (SMPS) 500V 290mΩ 6.7A UninterruptIb ..
IRFIBC20 ,Power MOSFET(Vdss=600V/ Rds(on)=4.4ohm/ Id=1.7A)applications. The moulding compound used provides a
high isolation capability and a low thermal re ..
IRFIBC20G ,600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used provides a
high isolation capability and a low thermal re ..
IRFIBC20GPBF ,600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packagePD-9.850
IRFll3C20G
1nteroatktr?al
TOR Rectifier
HEXFET® Power MOSFET
q Isolated Packa ..
IRFIBC30G ,600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageInternational
TOR Rectifier
HEXFET® Power MOSFET
. Isolated Package
q High Voltage Isolatio ..
ISL6527AIR ,Single Synchronous Buck Pulse-Width Modulation (PWM) ControllerApplicationsISL6527CB 0 to 70 14 Lead SOIC M14.15• Power supplies for microprocessorsISL6527ACB 0 t ..
ISL6527CB ,Single Synchronous Buck Pulse-Width Modulation (PWM) ControllerApplicationsISL6527CB 0 to 70 14 Lead SOIC M14.15• Power supplies for microprocessorsISL6527ACB 0 t ..
ISL6527IB ,Single Synchronous Buck Pulse-Width Modulation (PWM) ControllerFeaturesModulation (PWM) Controller• Operates from 3.3V to 5V inputThe ISL6527 makes simple work ou ..
ISL6528CB ,Dual Regulatorapplications. The dual-output • Small converter sizecontroller drives an N-Channel MOSFET in a stan ..
ISL6528CB-T ,Dual RegulatorFeaturesand Linear Power Controller• Provides two regulated voltagesThe ISL6528 provides the power ..
ISL6528CBZ-T , Dual Regulator - Standard Buck PWM and Linear Power Controller
IRFIB7N50A-IRFIB7N50APBF
500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
International
Tart, Rectifier
Applications
SMPS MOSFET
PD-91810
IRFll37N50A
HEXFET© Power MOSFET
o Switch Mode Power Supply ( SMPS ) Voss Rds(on) max ID
. Uninterruptable Power Supply 500V 0.529 6.6A
. High speed power switching
. High Voltage Isolation = 2.5KVRMS©
Benefits
o Low Gate Charge Clg results in Simple
Drive Requirement
o Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
o Fully Characterized Capacitance and D S
Avalanche Voltage and Current TO-220 FULLPAK
o Effective Coss specified ( See AN 1001)
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Ves @ 10V 6.6
ID @ To = 100°C Continuous Drain Current, Ves @ 10V 4.2 A
G, Pulsed Drain Current CKE) 44
PD @Tc = 25°C Power Dissipation 60 W
Linear Derating Factor 0.48 W/°C
VGS Gate-to-Source Voltage * 30 V
dv/dt Peak Diode Recovery dv/dt (36) 6.9 V/ns
T: Operating Junction and -55 to + 150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw 10Ibf-in (1.1N-m)
Applicable Off Line SMPS Topologies:
0 Two Transistor Forward
o Half & Full Bridge Convertors
o Power Factor Correction Boost
Notes C) through ©are on page 8
1
6/15/99
IRFll37N50A
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage 500 - - V VGS = 0V, ID = 250pA
AV(BR,DSSIATJ Breakdown Voltage Temp. Coemcient - 0.61 - V/°C Reference to 25°C, ID = 1mA©
Roswn) Static Drain-to-Source On-Resistance - - 0.52 n l/ss = 10V, ID = 4.0A G)
Vegan) Gate Threshold Voltage 2.0 - 4.0 V l/ns = Vss, ID = 250pA
loss Drain-to-Source Leakage Current : : Ji pA V: , ibt', V2: =" g, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 30V
Gate-to-Source Reverse Leakage - - -100 VGs = -30V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gts Forward Transconductance 6.1 - - S Vos = 50V, ID = 6.6A©
% Total Gate Charge - - 52 ID = 11A
Qgs Gate-to-Source Charge - - 13 nC Vos = 400V
di Gate-to-Drain ("Miller") Charge - - 18 VGS = 10V, See Fig. 6 and 13 ©©
tdwn) Turn-On Delay Time - 14 - VDD = 250V
tr Rise Time - 35 - ns ID = 11A
tuiott) Turn-Off Delay Time - 32 - Rs = 9.19
tr Fall Time - 28 - RD = 22n,See Fig. 10 ©©
Ciss Input Capacitance - 1423 - VGS = 0V
Coss Output Capacitance - 208 - Vos = 25V
Crss Reverse Transfer Capacitance - 8.1 - pF f = 1.0MHz, See Fig. 5©
COSS Output Capacitance© - 2000 - VGS = 0V, VDs = 1.0V, f = 1.0MHz
Coss Output Capacitance© - 55 - l/ss = 0V, VDS = 400V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 97 - I/ss = 0V, VDS = 0V to 400V S©
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy©© - 275 mJ
IAR Avalanche CurrentO© - 11 A
EAR Repetitive Avalanche Energy© - 6.0 mJ
Thermal Resistance
Parameter Typ. Max. Units
Rac Junction-to-Case - 2.1
' Junction-to-Ambient - 65 "C/W
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 6 6 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) (OO) - - 44 p-n junction diode. s
VSD Diode Forward Voltage - - 1.5 V To = 25°C, Is = 11A, VGS = 0V ©
trr Reverse Recovery Time - 510 770 ns To = 25°C, IF = 11A
G, Reverse RecoveryCharge - 3.4 5.1 PC di/dt = 100A/ps ©©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
