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IRFIB5N65AN/a50avai650V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
IRFIB5N65APBFIRN/a49avai650V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package


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IRFIB5N65A-IRFIB5N65APBF
650V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
International
TOR Rectifier
SMPS MOSFET
PD-91816B
IRFIB5N65A
HEXFET® Power MOSFET
Applications
q Switch Mode Power Supply (SMPS) VDSS RDS(on) max ID
o Uninterruptible Power Supply 650V 0.939 5.1A
q High Speed Power Switching
o High Voltage Isolation = 2.5KVRMS©
Benefits
o Low Gate Charge Qg results in Simple
Drive Requirement
o Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness -
o Fully Characterized Capacitance and
Avalanche Voltage and Current TO-220 Full-Pak G D s
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 5.1
ID @ To = 100°C Continuous Drain Current, Ves @ 10V 3.2 A
G, Pulsed Drain Current C) 21
Pro @Tc = 25°C Power Dissipation 60 W
Linear Derating Factor 0.48 W/''C
VGS Gate-to-Source Voltage , 30 V
dv/dt Peak Diode Recovery dv/dt © 2.8 V/ns
T: Operating Junction and -55 to + 150
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw 10 Ibf-in (1.1N-m)
Typical SMPS Topologies
o Single Transistor Flyback
o Single Transistor Forward
Notes (D through ©are on page 8 1

6/21/00
IRFll35N65A
International
TOR Rectifier
Static @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BRpss Drain-to-Source Breakdown Voltage 650 - - V VGS = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.67 - Vl°C Reference to 25°C, ID = 1mA©
RDS(on) Static Drain-to-Source On-Resistance - 0.93 Q l/ss = 10V, ID = 3.1.A ©
Vegan) Gate Threshold Voltage 2.0 - 4.0 V I/os = VGs, lo = 250pA
loss Drain-to-Source Leakage Current _- _- Ji, pA x: , gig x: =" g, To = 125°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 30V
Gate-to-Source Reverse Leakage - - -100 VGS = -30V
Dynamic © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 3.9 - - S VDs = 50V, ID = 3.1A
09 Total Gate Charge - - 48 ID = 5.2A
Qgs Gate-to-Source Charge - - 12 no Vos = 400V
di Gate-to-Drain ("Miller") Charge - - 19 Vas = 10V, See Fig. 6 and 13 ©
tam") Turn-On Delay Time - 14 - VDD = 325V
tr Rise Time - 20 - ns ID = 5.2A
td(off) Turn-Off Delay Time - 34 - Rs = 9.19
t, Fall Time - 18 - RD = 62n,See Fig. 10 ©
Ciss Input Capacitance - 1417 - VGS = 0V
Coss Output Capacitance - 177 - Vos = 25V
Crss Reverse Transfer Capacitance - 7.0 - pF f = 1.0MHz, See Fig. 5
C055 Output Capacitance - 1912 - l/ss = 0V, VDs = 1.0V, f = 1.0MHz
Coss Output Capacitance - 48 - l/ss = 0V, VDS = 520V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 84 - VGS = 0V, VDs = 0V to 520V ©
Avalanche Characteristics
Parameter Typ. Max. Units
EAs Single Pulse Avalanche Energy© - 325 mJ
IAR Avalanche Current© - 5.2 A
EAR Repetitive Avalanche Energy© - 6 m]
Thermal Resistance
Parameter Typ. Max. Units
Rouc Junction-to-Case - 2.1
ReJA Junction-to-Ambient - 65 "C/W
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 5.2 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 21 integral reverse G
(Body Diode) co p-n junction diode. s
Vso Diode Forward Voltage - - 1.5 V To = 25°C, Is = 5.2A, VGS = 0V ©
trr Reverse Recovery Time - 493 739 ns To = 25''C, IF = 5.2A
Qrr Reverse RecoveryCharge - 2.1 3.2 pC di/dt = 100A/ps (9
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)

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