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IRFI9634G
-250V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
PD - 9.1488
IRFI9634G
HEXFET© Power MOSFET
International
IEER Rectifier PRELIMINARY
Advanced Process Technology
Dynamic dv/dt Rating D VDSS = -250V
150°C Operating Temperature
Fast Switching
P-Channel
mil RDS(0n) = 1.09
Fully Avalanche Rated ID = -4.1A
Description s
Third Generation HEXFETs from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
and cost-effectiveness.Third Generation HEXFETs from
International Rectifier provide the designer with the
best combination of fast switching, ruggedized device F, if-3CCiakl-
design, low on-resistance and cost-effectiveness. r-ie-iii.'..',
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using TO-220 FULLPAK
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw Fixing.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Vss @ -10V -4.1
ID © Tc = 100°C Continuous Drain Current, VGS @ -10V -2.6 A
IDM Pulsed Drain Current (l) -16
Pro @Tc = 25°C Power Dissipation 35 W
Linear Derating Factor 0.28 W/°C
VGS Gate-to-Source Voltage , 20 V
EAS Single Pulse Avalanche Energy© 520 mJ
IAR Avalanche Current© -4.1 A
EAR Repetitive Avalanche Energyc0 3.5 mJ
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
Tu Operating Junction and -55 to + 150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 lbf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJc Junction-to-Case - 3.6 °C/W
ReJA Junction-to-Ambient - 65
8/8/96
IRFI9634G International
IOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -250 - - V VGS = 0V, ID = -250PA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - -0.27 - V/°C Reference to 25°C, ID = -1mA
Roam) Static Drain-to-Source On-Resistance - - 1.0 Q VGS = -10V, ID = -2.5A ©
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V Vos = VGS, ID = -250pA
gts Forward Transconductance 2.2 - - S Vos = -50V, lo = -4.1A
loss Drain-to-Source Leakage Current - - -25 pA Vros = -250V, VGS = 0V
- - -250 Vros = -200V, VGS = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 I/ss = -20V
% Total Gate Charge - - 38 [D = M.1A
Qgs Gate-to-Source Charge - - 8.0 no v.33 = -200V
di Gate-to-Drain ("Miller") Charge - - 18 V93 = -1OV, See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 12 - VDD = -130V
tr Rise Time - 23 - ID = -4.1A
tum Turn-Off Delay Time - 34 - ns Rs = 12n
tf Fall Time - 21 - Ro = 319, See Fig. 10 ©
Lo Internal Drain Inductance - 4.5 - Between le"': f D
nH 6mm (0.25m.) GALE
from package
Ls Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 680 - l/ss = 0V
Cass Output Capacitance - 170 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 40 - f = 1.0MHz, See Fig. 5
C Drain to Sink Capacitance - 12 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - -4 1 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) OD - - -16 p-n junction diode. s
VSD Diode Forward Voltage - - -6.5 V TJ = 25°C, Is = -4.1A, VGs = 0V ©
trr Reverse Recovery Time - 190 290 ns TJ = 25°C, IF = -4.1A
Qrr Reverse RecoveryCharge - 1.5 2.2 pC di/dt = -100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (tum-on is dominated by L3+LD)
Notes:
co Repetitive rating; pulse width limited by @ ISD f -4.1A, di/dt f -640A/ps, VDD f V(BR)DSS,
max. junction temperature. (See Ftg. 11 ) TJ 3 150°C
© Starting TJ = 25°C, L = 62mH G) Pulse width S 300ps; duty cycle S 2%.
Re: 259, IAS = -4.1A. (See Figure 12)
