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ISBR
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PD-9.838
IIRFl9630G
HEXFET® Power MOSFET
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IRFI9530GPBF
-100V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
llnterrtatiortall
149R Rectifier
PD-9.836
llRFl9530G
HEXFET® Power MOSFET
0 Isolated Package
tt High Voltage Isolation,--. 2.5KVRMS (5) D V - 100V
0 Sink to Lead Creepage Dist.= 4.8mm DSS - -
0 P-Channel v
0 175°C Operating Temperature G RDS(on) = 0.309
0 Dynamic dv/dt Rating
0 Low Thermal Resistance s ID = -7.7A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. a
The TO-220 Fullpak eliminates the need for additional insulating hardware in $15
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100 micron mica i"hi)liiiis1,
barrier with standard TO-220 product. The Fullpak is mounted to a heatsink '')iiiij.
using a single clip or by a single screw fixing. TO-220 FULLPAK
Absolute Maximum Ratings
Parameter Max, Units
10 @ Tc = 25°C Continuous Drain Current, Vas @ -10 V -7.7
In © To = 100°C Continuous Drain Current, Vss © -10 V -5.4 A
IDM Pulsed Drain Current Cl -31
PD @ To = 25°C Power Dissipation 42 L W
Linear Derating Factor 0.28 ' WPC
VGS Gate-to-Source Voltage t20 V
EAS Single Pulse Avalanche Energy © 380 md
IAR Avalanche Current co -7.7 A
EAR Repetitive Avalanche Energy Ci) 4.2 . mJ
dv/dt Peak Diode Recovery dv/dt © -5.5 V/ns
TJ Operating Junction and -55 to +175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 {bf-in (1.1 N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rm Junction-to-Case - - 3.6 °C/W
_l%A Junction-to-Ambient - - 65
|RFI953OG
Electrical Characteristics © TU = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(amoss Drain-to-Source Breakdown Voltage -100 - - V Vss---0V, lo=-2500A
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - -O.10 - VPC Reference to 25°C, ID=-1mA
Bosh") Static Drain-to-Source On-Resistance - - 0.30 Q VGs=-10V, Io=-4.6A ©
Vesuh) Gate Threshold Voltage -2.0 - -4.0 V Vos=VGs, Io----250pA
gm Forward Transconductance 3.4 - - s Vos=-50V, ID=-4.6A ©
loss Drain-to-Source Leakage Current - - -100 pA Vos=-100V, Vas=OV
- - -500 VDs=-80V, Vas=01/, TJ=150°C
less Gate-to-Source Forward Leakage - - -100 n A Ves=-20V
Gate-to-Source Reverse Leakage .'.-. - 100 VGs=2OV
th Total Gate Charge - - 38 ID=-12A
Qgs Gate-to-Source Charge - - 6.8 no Vos=-80V
di Gate-to-Drain ("Miller") Charge -... - 21 Ves=-10V See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 12 - Voo=-50V
tr Rise Time - 52 - ns ID=-12A
td(om Turn-Off Delay Time - 31 - RG=1ZQ
tr Fall Time - 39 - RD=3.QQ See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - g $121163 ste. ') D
nH from package GE
Ls internal Source Inductance - 7.5 - Ind center 6f 'ii)
die contact s
Ciss Input Capacitance - 860 - VGs=0V
Coss Output Capacitance - 340 - pF Vros----25V
Crss Reverse Transfer Capacitance - 93 - f=1.0MHz See Figure 5
C Drain to Sink Capacitance - 12 - pF f=1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - -7 7 MOSFET symbol D
(Body Diode) . A showing the 'r.,-,,),
ISM Pulsed Source Current - __ -31 integral reverse G tlr
(Body Diode) C) p-n junction diode. s
Vso Diode Forward Voltage - - -6.3 V Tr--25oC, Is=-7.7A, VGs=0V ©
tn Reverse Recovery Time - 120 240 ns TJ=25°C, IF=-12A
er Reverse Recovery Charge - 0.46 0.92 wc di/dt=100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
(D Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=-25V, starting TJ=25°C, L=9.6mH
RG=25§2. |As=-7.7A (See Figure 12)
TJS175°C
© ISDS-7.7A, di/dts140A/us, VDDSV(BR)Dss,
© t=60s, f=60HZ
G) Pulse width f 300 us; duty cycle 32%.
