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IRFI830GIRN/a28600avai500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
IRFI830GPBFIRN/a4550avai500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package


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IRFI830G-IRFI830GPBF
500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
miter1iailiii..t,tt,ttig
BOR Rectifier
PD-9.646A
IRFl830G
HEXFET6 Power MOSFET
O Isolated Package
0 High Voltage Isolation-- 2.5KVRMS (5) V - 500V
0 Sink to Lead Creepage Dist.= 4.8mm DSS -
tt Dynamic dv/dt Rating
qt Low Thermal Resistance RDS(on) 1=. 1.59
ID = 3.1 A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. a
The TO-MO Fullpak eliminates the need for additional insulating hardware in agiib'
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100 micron mica "ii1ilii)s,,
barrier with standard TO-220 product. The Fullpak is mounted to a heatsink
using a single clip or by a single screw fixing. TO-22O FULLPAK
Absolute Maximum Ratings
Parameter Max. Units
lo @ To = 25°C Continuous Drain Current, VGs © 10 V 3.1
In @ To = 100°C Continuous Drain Current, Ves @ 10 V 2.0 A
IDM Pulsed Drain Current (D 12
Pry @ To = 25°C Power Dissipation 35 W
Linear Deréting Factor 0.28 WPC
l/tas Gate-to-Source Voltage :20 V
EAS Single Pulse Avalanche Energy C) 180 mJ
IAR Avalanche Current (D 3.1 A
EAR Repetitive Avalanche Energy co 3.5 mJ
dv/dt Peak Diode Recovery dv/dt © 3.5 V/ns
To Operating Junction and ~55 to +150
Tsms Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbf-in (1.1 N.m)
Thermal Resistance
Parameter Min. Typ, Max. Units
Redo Junction-to-Case - - 3.6 a C /W
Ram Junction-to-Ambient - - 65
IRFl830G
Electrical Characteristics Iii) TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BH)DSS Drain-to-Source Breakdown Voltage 500 - - V Vas=OV, ID: 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.61 - VPC Reference to 25°C, In: 1mA
RDS(on) Static Drain-to-Source On-Resistance -..-. - 1.5 n VGs=1OV, |o=1.9A ©
Vtasim) Gate Threshold Voltage 2.0 - 4.0 V Vos=VGs, ID: 250WA
gis Forward Transconductance 2.0 - - S Vos=50V, |o=1.9A ©
loss Drain-to-Source Leakage Current - - 25 WA VDS=5OOV' VGS=OV
- - 250 VDs=400V, VGs=0V, TJ=125°C
loss Gate-to-Source Forward Leakage - - 100 n A Ves=20V
Gate-to-Source Reverse Leakage - - -100 VGs=-20V
th Total Gate Charge - - 38 lo=3.1 A
ths Gate-to-Sou rce Charge - - 5.0 " Vos=400V
di Gate-to-Drain ("Miller") Charge - - 22 Vss=10V See Fig. 6 and 13 ©
tam Turn-On Delay Time ._ 8.2 - VDD=250V
tr Rise Time - 16 - ns |o=3.1A
tos) Turn-Off Delay Time - 42 - RG=129
t; Fall Time - 16 - RD--79n See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - ttr1vrii's1.lti1nd.') D
nH from package iii])
Ls Internal Source Inductance - 7.5 - Ind center 6f
die contact s
Ciss Input Capacitance - 610 - VGs=0V
Cass Output Capacitance - 160 _...-.'. PF VDS= 25V
Crss Reverse Transfer Capacitance - 68 - f=1.0MHz See Figure 5
C Drain to Sink Capacitance - 12 - pF =1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - 3 1 MOSFET symbol D
(Body Diode) . A showing the 'Iii)
ISM Pulsed Source Current - - 12 integral reverse G (tr''-]
(Body Diode) co p-n junction diode. s
Vso Diode Forward Voltage - - 1.6 V TJ=25°C, Is=3.1A, vsszov ©
trr Reverse Recovery Time ..-.. 320 640 ns TJ=25°C, IF=3.1A
G, Reverse Recovery Charge _ 1.0 2.0 pc di/dt---100A/ws ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
(IC) Repetitive rating; pulse width limited by
_max. junction temperature (See Figure 11)
© VDD=50V, starting TJ=25°C, L=33mH
RG=25§2, |As=3.1A (See Figure 12)
© Isoss.1A, di/dtsi75A/ps, VDDSV(BR)DSS,
TJS150°C
G) t=60s, f=60Hz
© Pulse width s; 300 us; duty cycle 52%.
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