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IRFI624G
250V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
PD-9.833
International
TOR Rectifier IRFI624G
HEXFET® Power MOSFET
o Isolated Package
q ' . = 2. KVRM D
High Voltage Isolation 5 s © VDSS = 250V
o Sink to Lead Creepage Dist.--.. 4.8mm
o Dynamic dv/dt Rating
o Low Thermal Resistance G RDS(on) = 1-19
S ID=3AA
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-MO Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100 micron mica
barrier with standard TO-220 product. The Fullpak is mounted to a heatsink
using a single clip or by a single screw fixing. TO-220 FULLPAK
Absolute Maximum Ratings
Parameter Max. Units
ID © Tc = 25% Continuous Drain Current, Vias @ 10 V 3.4
In @ Tc = 100°C Continuous Drain Current, VGS @ 10 V 2.2 A
IDM Pulsed Drain Current co 14
Po @ Tc = 25°C Power Dissipation 30 W
Linear Derating Factor 0.24 W/°C
Ves Gate-to-Source Voltage ur20 V
EAS Single Pulse Avalanche Energy (2) 100 mJ
JAR aw Avalanche Current co 3.4 A
EAR Repetitive Avalanche Energy (D 3.0 " mJ
dv/dt Peak Diode Recovery dv/dt (3) 4.8 V/ns
TI, Operating Junction and ~55 to +150
TSTG Storage Temperature Range 1 °C
Soldering Temperature, for 10 seconds E 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw , 10 lbfdn (1.1 N.m) J
Thermal Resistance
- __g_‘__~R R __:era_meter _ _ Min. Typ. Max. Units
fie] - J,is2t_i.o'-Co-fai.si.s - - 4.1 oc/IN
Rem Junction-to-Ambient - - 65 J
llRFl624G
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(enmss Drain-to-Source Breakdown Voltage 250 - - V VGs=OV, lots: 250PA
_,' AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.36 - V/°C Reference to 25°C, ID: 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 1.1 Q VGs=10V, ID=2.0A ©
VGS(1h) Gate Threshold Voltage 2.0 - 4.0 V Vos=Vss, ID: 25011A
gfs Forward Transconductance 1.5 - - S Vos=50V, 10:2.0A ©
loss Drain-to-Source Leakage Current - - 25 11A VDs=250V, Vss=OV
- .-. 250 Vos=200V, VGS=0V, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A VGs=2OV
Gate-to-Source Reverse Leakage - - -100 Ves=-20V
09 Total Gate Charge .-. - 14 b=4.4A
Qgs Gate-to-Source Charge - - 2.7 nC VDs=200V
di Gate-to-Drain ("Miller") Charge - - 7.8 VGs=10V See Fig. 6 and 13 GD
Hon) _ Turn-On Delay Time - 7.0 - VDD=125V
tr Rise Time - 13 - ns ID=4.4A
tam) Turn-Off Delay Time - 20 - Rs--18n
t, Fall Time - 12 - Ro=289 See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - tr1vriitl.lti1nd:) D
nH from package 6Q:
Ls Internal Source Inductance - 7.5 - and center 6f
die contact s
_ Ciss Input Capacitance -.'.t.. 260 - Ves=0V
1 Coss Output Capacitance - 77 -- pF V03: 25V
1 Crss Reverse Transfer Capacitance - 15 - f=1.0MHz See Figure 5
1 C Drain to Sink Capacitance - 12 - pF f=1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - 3 4 MOSFET symbol D
(Body Diode) . A showing the F7:
ISM Pulsed Source Current - - 14 integral reverse G (tCl]
(Body Diode) Ci) p-n junction diode. S
Van Diode Forward Voltage - - 1.8 V TJ=25°C, Is=3.4A, I/as-HN ©
tn Reverse Recovery Time - 200 i 400 I ns TJ=25°C, lp=4.4A
Qrr Reverse Recovery Charge - 0.95 1.9 1 1.10 di/dt=100A/us ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
Q) VDD=50V, starting TJ=25°C, L=13mH
RG=25Q lAs=3.4A (See Figure 12)
TJS1SODC
C4) ISDS4.4A, di/dtSQOA/ps, VDDSV(BR)Dss,
© t=60s, f=60Hz
© Pulse width LC 300 us; duty cycle 32%.
