IRFI530N ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications.The moulding compound used provides a high isolationTO-220 FULLPAKcapability and a low ..
IRFI540G ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used provides a
high isolation capability and a low thermal re ..
IRFI620G ,200V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used provides a
high isolation capability and a low thermal re ..
IRFI624G ,250V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used provides a
high isolation capability and a low thermal re ..
IRFI630G ,200V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageInternational
IEBR
Rectifier
PD-9. 652A
IRFI630G
HEXFET® Power MOSFET
. Isolated ..
IRFI630GPBF ,200V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageInternational
IEBR
Rectifier
PD-9. 652A
IRFI630G
HEXFET® Power MOSFET
. Isolated ..
ISL6522CB ,Buck and Synchronous Rectifier Pulse-Width Modulator (PWM) ControllerISL6522®Data Sheet November 2002 FN9030.3Buck and Synchronous Rectifier
ISL6522CBZ-T , Buck and Synchronous Rectifier Pulse-Width Modulator (PWM) Controller
ISL6522CR ,Buck and Synchronous Rectifier Pulse-Width Modulator (PWM) Controllerfeatures. SeeTech JA Brief TB379.3. For θ , the "case temp" location is the center of the exposed m ..
ISL6522CRZ-T , Buck and Synchronous Rectifier Pulse-Width Modulator (PWM) Controller
ISL6522CV ,Buck and Synchronous Rectifier Pulse-Width Modulator (PWM) ControllerISL6522®Data Sheet November 2002 FN9030.3Buck and Synchronous Rectifier
ISL6522CVZ-T , Buck and Synchronous Rectifier Pulse-Width Modulator (PWM) Controller
IRFI530N
100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
International PD-9.1353A
TOR Rectifier PRELIMINARY IRFl530N
HEXFET® Power MOSFET
0 Advanced Process Technology
q Isolated Package D
0 High Voltage Isolation = 2.5KVRMS (S) VDss = 100V
o Sink to Lead Creepage Dist. = 4.8mm
o Fully Avalanche Rated G r rn RDSM) = 0.119
Description s ID = 12A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance persilicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient F,
Fe',','.','...".,...
device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab TO-220 FULLPAK
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25''C Continuous Drain Current, VGS @ 10V 12
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 8.6 A
IDM Pulsed Drain Current C)(5) 60
Po @Tc = 25°C Power Dissipation 41 W
Linear Derating Factor 0.27 W/°C
VGS Gate-to-Source Voltage $20 V
EAs Single Pulse Avalanche Energy ©© 150 mJ
IAR Avalanche Current0D© 9.0 A
EAR Repetitive Avalanche Current® 4.1 mJ
dv/dt Peak Diode Recovery dv/dt (MD 5.0 V/ns
T: Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, tor 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rauc Junction-to-Case - - 3.7 a C /W
ReJA Junction-to-Ambient - - 65
3/16/98
IRFl530N
International
TOR Rectifier
Electrical Characteristics ti) T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V VGS = 0V, ID = 250pA
AV(BR)DsslATJ Breakdown Voltage Temp. Coefficient - 0.12 - V/°C Reference to 25°C, ID = 1mA©
Rosmn) Static Drain-to-Source On-Resistance - - 0.11 Q VGS = 10V, ID = 6.6A ©
Vegan) Gate Threshold Voltage 2.0 - 4.0 V I/ras = VGs, ID = 250pA
gfs Fon/vard Transconductance 6.4 - - S VDS = 50V, ID = 9.0A©
loss Drain-to-Source Leakage Current _- _- Ji, pA x3: =" T)):,'::'),, = 1 5 O'' C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
% Total Gate Charge - - 44 lo = 9.0A
Q95 Gate-to-Source Charge - - 6.2 nC Vros = 80V
di Gate-to-Drain ("Miller") Charge - - 21 l/ss = 10V, See Fig. 6 and 13 ©©
tam) Turn-On Delay Time - 6.4 - VDD = 50V
t, Rise Time - 27 - ID = 9.0A
tam Turn-Off Delay Time - 37 - ns Rs = 12n
tf Fall Time - 25 - Ro = 5.59, See Fig. 10 ©©
Ln Internal Drain Inductance - 4.5 - Between tal _ D
nH 3mm (0.2k5m.) cf ":;
Ls Internal Source Inductance - 7.5 - gggnc:::efg:die contact lit'- 5/
Ciss Input Capacitance - 640 - VGS = 0V
Coss Output Capacitance - 160 - pF I/os = 25V
Crss Reverse Transfer Capacitance - 88 - f = 1.0MHz, See Fig. 5©
C Drain to Sink Capacitance - 12 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 12 MOSFET symbol D
(Body Diode) A showmg me
ISM Pulsed Source Current - _ 60 integral reverse
(Body Diode) COO) p-n junction diode. s
Vso Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 6.6A, VGS = 0V ©
trr Reverse Recovery Time - 130 190 ns T., = 25°C, IF = 9.0A
Qrr Reverse Recovery Charge - 650 970 nC di/dt = 100A/ps Cr)6)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11 )
© VDD = 15V, starting TJ = 25°C, L = 3.1mH
RG = 259, IAS-- 9.0A. (See Figure 12)
© la, f 9.0A, di/dt S 520A/ps, VDD f V(BR)DSSI
T J 3 175°C
co Pulse width s: 300ps; duty cycle S 2%.
(s) t=60s, f=60Hz
© Uses IRF530N data and test conditions
