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IRFI4212H-117P
100V Dual N-Channel Digital Audio HEXFET Power MOSFET in a TO-220 Full-Pak(Iso) package
International
OR Rectifier
Features
Integrated half-bridge package
Reduces the part count by half
Facilitates better PCB layout
DIGITAL AUDIO MOSFET
PD - 97249A
lRFl4212H-117P
Key Parameters s
. Key parameters optimized for Class-D
audio amplifier applications
. LowR
) for improved efficiency
. Low Clg and st for better THD and
improved efficiency
. Low On for better THD and lower EMI
. Can delivery up to 150W per channel into
49 load in half-bridge configuration
amplifier
. Lead-free package
Description
Vos 100 V
RDS(ON) typ. @ 10V 58 ms;
q, typ. 12 nC
st typ. 6.9 nC
Ream) typ. 3.4 Q
T J max 150 °C
TO-220 Full-Pak 5 PIN
G1, G2
D1, D2
SI, S2
Source
This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It
consists of two power MosFET switches connected in half-bridge configuration. The latest process is used
to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery,
and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors
such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and
reliable device for Class D audio amplifier applications.
Absolute Maximum Ratings ©
Parameter Max. Units
Vos Drain-to-Source Voltage 100 V
Vss Gate-to-Source Voltage t20
ID @ To = 25°C Continuous Drain Current, Vss @ 10V 11 A
ID @ Tc = 100°C Continuous Drain Current, Vas @ 10V 6.8
G, Pulsed Drain Current co 44
PD @Tc = 25°C Power Dissipation © 18 w
PD @TC = 100°C Power Dissipation © 7.0
Linear Derating Factor 0.14 W/°C
EAS Single Pulse Avalanche Energy© 41 mJ
Tu Operating Junction and -55 to + 150 ''C
Tsms Storage Temperature Range
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 1OIb-in (1.1N-m)
Thermal Resistance S
Parameter Typ. Max. Units
Rmc Junction-to-Case (D - 7.1 °CNV
RQJA Junction-to-Ambient (free air) - 65
08/21/06
n erno ionol
IRFl4212H-r17P t,,rg1itC)
Electrical Characteristics © T, = 25°C (unless otherwise specified) s
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 100 - - V Vss = 0V, ID = 250pA
ABVDsslATJ Breakdown Voltage Temp. Coefficient - 0.09 - V/°C Reference to 25°C, ID = 1mA
Roam, Static Drain-to-Source On-Resistance - 58 72.5 mg Vss = 10V, ID = 6.6A ©
Vasmm Gate Threshold Voltage 3.0 - 5.0 V Vns = Vss, ID = 250pA
AVGS(th)/ATJ Gate Threshold Voltage Coefficient - -11 - mV/°C
loss Drain-to-Source Leakage Current - - 2O pA VDS = 100V, Vss = 0V
- - 250 VDS = 100V, Vas = 0V, T, = 125°C
less Gate-to-Source Forward Leakage - - 200 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -200 VGS = -20V
gfs Forward Transconductance 11 - - S Vos = 50V, b = 6.6A
Qg Total Gate Charge - 12 18
0951 Pre-l/th Gate-to-Source Charge - 1.6 - VDS = 80V
0952 Post-Vth Gate-to-Source Charge - 0.71 - nC Vss = 10V
di Gate-to-Drain Charge - 6.2 - ID = 6.6A
ngd, Gate Charge Overdrive - 3.5 - See Fig. 6 and 15
st Switch Charge (Qgsz + di) - 6.9 -
Ream) Internal Gate Resistance - 3.4 - Q
ton) Turn-On Delay Time - 4.7 - VDD = 50V, Vas = 10V ©
t, Rise Time - 8.3 - ID = 6.6A
ton Turn-Off Delay Time - 9.5 - ns RG = 2.59
t, Fall Time - 4.3 -
Ciss Input Capacitance - 490 - Vss = 0V
Coss Output Capacitance - 64 - pF l/os = 50V
Crss Reverse Transfer Capacitance - 34 - f = 1.0MHz, See Fig.5
cu, eff. Effective Output Capacitance - 110 - VGS = 0V, Vos = 0V to 80V
Lo Internal Drain Inductance - 4.5 - Between lead, D
nH 6mm (0.25in.) (rr,' l
Ls Internal Source Inductance - 7.5 - from package Gig
and center of die contact s
Diode Characteristics (9
Parameter Min. Typ. Max. Units Conditions
ls @ TC = 25°C Continuous Source Current - - 11 MOSFET symbol D
(Body Diode) A showing the H2:
G, Pulsed Source Current - - 44 integral reverse G c,
(Body Diode) co p-n junction diode. cl
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 6.6A, Vss = 0V ©
t,, Reverse Recovery Time - 36 54 ns TJ = 25°C, IF = 6.6A
0,, Reverse Recovery Charge - 56 84 nC di/dt = 100A/ps ©
Notes:
CO Repetitive rating; pulse width limited by max. junction temperature.
© Starting Tu = 25°C, L =1.9mH, Rs = 259, IAS = 6.6A.
© Pulse width 3 400ps; duty cycle s: 2%.
© Re is measured at T: of approximately 90°C.
s Specifications refer to single MosFET.
2
