IRFH7914TR2PBF ,30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package HEXFET Power MOSFET
IRFH7921 ,30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN packageApplicationsBenefits Very low R at 4.5V VDS(ON) GS Low Gate Charge Fully Characterized Avalanche ..
IRFH7923PBF ,30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN packageApplicationsBenefits Very low R at 4.5V VDS(ON) GS Low Gate Charge Fully Characterized Avala ..
IRFH7923PBF ,30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN packageApplications in Neworking &Computing Systems8.7m
IRFH7914-IRFH7914TR2PBF
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
International
ISER liectifier ltM,''dlf9W1,RAp
Applications HEXFET© Power MOSFET
q Control MOSFET of Sync-Buck Converters V R max Q
used for Notebook Processor Power DSS DS(on) g
q Control MOSFET for Isolated DC-DC 30V 8.7mQ@VGs = 10V 8.3nC
Converters in Networking Systems
Benefits
q Very low RDS(ON) at 4.5V Vss 5 D ' G 4
q Low Gate Charge
q Fully Characterized Avalanche Voltage and E6 D S 3
Current 'oy D ' , 2
o 100% Tested for Rs " D T . s 1
o Lead-Free (Qualified up to 260°C Reflow)
o RoHS compliant (Halogen Free) PQFN 5X6 mm
q Low Thermal Resistance
0 Large Source Lead for more reliable Soldering
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
l/tas Gate-to-Source Voltage * 20
ID @ TA = 25°C Continuous Drain Current, Vas @ 10V 15
ID @ TA = 70°C Continuous Drain Current, Vss @ 10V 12
ID @ Tc = 25°C Continuous Drain Current, Ves @ 10V 35 A
IDM Pulsed Drain Current OD 110
Pro OTA = 25°C Power Dissipation © 3.1 W
PD @TA = 70°C Power Dissipation S 2.0
Linear Derating Factor s 0.025 W/°C
T., Operating Junction and -55 to + 150 °C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case © - 7.2 °C/W
RNA Junction-to-Ambient s -- 40
Notes (D through © are on page 9
ll © 2013 International Rectifier August 16, 2013
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Static © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V Vas = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient -- 0.022 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 7.5 8.7 Vas = 10V, ID = 14A ©
- 11.2 13 mn VGS=4.5V,ID=11A®
VGS(1h) Gate Threshold Voltage 1.35 1.8 2.35 V
. . Vos = Vss, ID = 25pA
Avesuh) Gate Threshold Voltage Coefficient - -6.08 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 VDS = 24V, Vas = 0V
-- -- 150 PA Vrss = 24V, Vss = OV, To = 125°C
less Gate-to-Source Forward Leakage - - 100 Ves = 20V
Gate-to-Source Reverse Leakage - - -100 nA Vas = -20V
gfs Forward Transconductance 77 - - S Vrss = 15V, ID = 11A
q, Total Gate Charge - 8.3 12
0951 Pre-Vth Gate-to-Source Charge - 2.1 - Vos = 15V
0952 Post-Vth Gate-to-Source Charge - 1.0 - Vss = 4.5V
di Gate-to-Drain Charge - 2.8 - nC lo = 11A
ngdr Gate Charge Overdrive - 2.4 - See Fig.17 & 18
st Switch Charge (0952 + di) - 3.8 -
Qoss Output Charge - 4.8 - nC Vos = 16V, l/ss = OV
Re Gate Resistance - 1.3 2.2 Q
tam) Turn-On Delay Time - 11 - VDD = 15V, Vss = 4.5V
t, Rise Time - 11 - lo=11A
tam Turn-Off Delay Time - 12 - ns RG=1 .89
t, Fall Time - 4.6 - See Fig.15
Ciss Input Capacitance - 1160 - Vss = 0V
Coss Output Capacitance - 220 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 100 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy © - 17 mJ
IAR Avalanche Current OD - 11 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current 3 9 MOSFET symbol D
(Body Diode) - - . A showing the
ISM Pulsed Source Current _ _ 110 integral reverse G
(Body Diode) OD p-n junction diode. s
Vso Diode Forward Voltage - --- 1.0 V TJ = 25°C, Is = 11A, VGS = 0V ©
trr Reverse Recovery Time - 14 21 ns TJ = 25°C, IF = 11A, VDD = 15V
er Reverse Recovery Charge - 9.5 14 l di/dt = 200A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
© 2013 International Rectifier
August 16,2013
