IRFH5302TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a PQFN 5x6mm packageFeatures≤ Ω)Low R ( 2.1m Lower Conduction LossesDSon≤ Low Thermal Resistance to PCB ( 1.2°C/W) Ena ..
IRFH5306TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN packageFeatures BenefitsLow charge (typical 7.8nC) Lower switching lossesLow thermal resistance to PCB (< ..
IRFH7911 ,30V Dual N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm Lead Free packageFeaturesIncreased power densityControl and synchronous FET in one package(50% vs two PQFN 5x6) Low ..
IRFH7911TRPBF ,30V Dual N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm Lead Free package HEXFET Power MOSFET
IRFH5302TRPBF
30V Single N-Channel HEXFET Power MOSFET in a PQFN 5x6mm package
International
ISBR Rectifier 'RFH5‘302PbF
HEXFET© Power MOSFET
Vos 30 v
RDS(cn) max 2.1 mn
(@Vss = 10V)
09 (typical) 29 nC
RG (typical) 1.6 Q
'0 1006) A .. '
(@Tc(Bonom) = 25°C) PQFN 5X6 mm
Applications
q OR-ing MOSFET for 12V (typical) Bus in-Rush Current
q Synchronous MOSFET for buck converters
q Battery Operated DC Motor Inverter MOSFET
Features and Benefits
Features Benefits
Low Rcson (S 2.1 m9) Lower Conduction Losses
Low Thermal Resistance to PCB (f 1.2°C/W) Enable better thermal dissipation
100% Ra tested Increased Reliability
Low Profile (f 0.9 mm) results in Increased Power Density
Industry-Standard Pinout 2) Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques Easier Manufacturing
RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier
MSL1, Industrial Qualification Increased Reliability
Standard Pack
Orderable part number Package Type . Note
Form Quantity
IRFH5302TRPbF PQFN 5rrm x 6mm Tape and Reel 4000
IfRFH5302TfQPbF Pt2FNSrmrx6mm Tttpe-and-Reel 400 EOL Notice #259
Absolute Maximum Ratings
Parameter Max. Units
l/ss Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage A 20
ID © T, = 25°C Continuous Drain Curren1,VGs © 10V 32
ID @ TA = 70°C Continuous Drain Current,Vss @ 10V 26
lo @ Tasman.) = 25°C Continuous Drain Current, VGS @ 10V 100 © A
lo @ quonom) = 100°C Continuous Drain Current, I/ss @ 10V 100 ©
IBM Pulsed Drain Current co 400
PD @TA = 25°C Power Dissipation s 3.6 W
PD @ Tchmm) = 25°C Power Dissipation s 100
Linear Derating Factor co 0.029 W/°C
TJ Operating Junction and -55 to + 150 o
Tsms Storage Temperature Range
Notes C) through G) are on page 8
il © 2014 International Rectifier Submit Datasheet Feedback March 10, 2014
Etiqil,iR,
Static Iii) T,, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V Vas = 0V, ID = 250pA
ABI/oss/ATU Breakdown Voltage Temp. Coefficient - 0.02 - V/°C Reference to 25°C, ID = 1mA
Roswn) Static Drain-to-Source On-Resistance - 1.8 2.1 m9 Vss = 10V, ID = 50A ©
- 2.8 3.5 Vss = 4.5V, lo = 50A ©
Vesnh) Gate Threshold Voltage . . 1.35 1.8 2.35 V Vos = kss, ID = 100pA
Aszm Gate Threshold Voltage Coefficient - -6.8 - mV/°C
loss Drain-to-Source Leakage Current - - 5.0 PA Vos = 24V, Vas = 0V
- - 150 Vos = 24V, Vas = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 n A Vas = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
gfs Forward Transconductance 180 - - S Vos = 15V, ID = 50A
a, Total Gate Charge - 76 - nC Vss = 10V, Vos = 15V, b = 50A
a, Total Gate Charge - 29 41
0021 Pre-Vth Gate-to-Source Charge - 7.7 - Vos = 15V
Qqss2 Post-Vth Gate-to-Source Charge - 4.4 - n C I/ss = 4.5V
cu Gate-to-Drain Charge - 9.7 - ID = 50A
000d, Gate Charge Overdrive - 8.2 - See Fig.1 & 18
st Switch Charge (0032 + qu) - 14 -
aoss Output Charge - 19 - nC Vos = 16V, Vss = 0V
Rs Gate Resistance - 1.6 2.5 f2
ton) Turn-On Delay Time - 18 Va, = 15V, I/ss = 4.5V
t, Rise Time - 51 - ns ID = 50A
tdmm Turn-Off Delay Time - 22 - RG=1.8Q
t, Fall Time - 18 - See Fig.15
Ciss Input Capacitance - 4400 - I/ss = 0V
Coss Output Capacitance - 890 - pF Vos = 15V
gig Reverse Transfer Capacitance - 360 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy © - 130 mJ
IAR Avalanche Current (D - 50 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 100 © MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 400 integral reverse G
(Body Diode) co p-n junction diode. s
VSD Diode Forward Voltage - - 1.0 V Tu = 25°C, ls = 50A, Vas = 0V (3
trr Reverse Recovery Time - 2O 30 ns Tu = 25°C, IF = 50A, VDD = 15V
a,, Reverse Recovery Charge - 32 48 nC di/dt = 300A/ps ©
ton Forward Turn-On Time Time is dominated by parasitic Inductance
Thermal Resistance
Parameter Typ. Max. Units
ReJC (Bottom) Junction-to-Case GD - 1.2
RUC; (Top) Junction-to-Case co - 15 °CNV
ReJA Junction-to-Ambient s - 35
Ram (<10s) Junction-to-Ambient s - 22
© 2014 International Rectifier
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March 10, 2014
