IRFH5302DTRPBF ,30V Single N-Channel HEXFET Power MOSFET with an integrated Schottky Diode in a 5mm X 6mm PQFN packageFeaturesLow RDSon (<2.5mΩ) Lower Conduction LossesSchottky Intrinsic Diode with Low Forward Voltage ..
IRFH5302TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a PQFN 5x6mm packageFeatures≤ Ω)Low R ( 2.1m Lower Conduction LossesDSon≤ Low Thermal Resistance to PCB ( 1.2°C/W) Ena ..
IRFH5306TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN packageFeatures BenefitsLow charge (typical 7.8nC) Lower switching lossesLow thermal resistance to PCB (< ..
IRFH7911 ,30V Dual N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm Lead Free packageFeaturesIncreased power densityControl and synchronous FET in one package(50% vs two PQFN 5x6) Low ..
IRFH7911TRPBF ,30V Dual N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm Lead Free package HEXFET Power MOSFET
IRFH5302DTRPBF
30V Single N-Channel HEXFET Power MOSFET with an integrated Schottky Diode in a 5mm X 6mm PQFN package
International
ISBR Rectifier
|RFH5302DPbF
HEXFET© Power MOSFET
V03 30 V
RDS(on) max
(@Vss =10V) 2.5 mn
VSD max 0.65 v
(@ ls = 5.0A)
trr (typical) 1 9 ns
100 © A
(@Tc(Soitom) = 25°C)
PQFN 5X6 mm
Applications
q Synchronous MOSFET for high frequency buck converters
Features and Benefits
Features
Low RDSon (<2.5m§2)
Schottky Intrinsic Diode with Low Forward Voltage
Low Thermal Resistance to PCB (<1.2°C/W)
100% Rg tested
Low Profile (<0.9 mm) results in
Industry-Standard Pinout =>
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Lower Switching Losses
Increased Power Density
Increased Reliability
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number Package Type Standard Pack Note
Form Quantity
IRFH5302DTRPBF PQFN 5mm x 6mm Tape and Reel 4000
IRFH5302DTR2PBF PQFNémnHeémm Iapaand4¥eel 400 EOL Notice #259
Absolute Maximum Ratings
Parameter Max. Units
Vros Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage t 20
ID @ T, = 25°C Continuous Drain Current, Vss @ 10V 29
ID @ T, = 70°C Continuous Drain Current, Vss @ 10V 23
ID @ Tchnom) = 25°C Continuous Drain Current, Ves @ 10V © 100 A
ID @ quomm, = 100°C Continuous Drain Current, Vas @ 10V © 100
IDM Pulsed Drain Current co 400
PD @TA = 25°C Power Dissipation S 3.6 W
PD @qumm) = 25°C Power Dissipation © 104
Linear Deratinq Factor co 0.83 W/°C
T: Operating Junction and -55 to + 150 ''C
TSTG Storage Temperature Range
Notes CO through © are on page 8
fl © 2014 International Rectifier Submit Datasheet Feedback March 6, 2014
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Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V Vss = 0V, ID = 500pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - -O.25 - V/°C Reference to 25°C, ID = 1.0mA
RDSM) Static Drain-to-Source On-Resistance -- 2.0 2.5 m9. Vss = 10V, ID = 50A ©
-- 3.1 3.7 l/ss = 4.5V, ID = 50A oo
VGS(th) Gate Threshold Voltage 1.35 1.80 2.35 V Vos = Vss, ID = 100pA
Avesah) Gate Threshold Voltage Coefficient - -1O - mV/°C
loss Drain-to-Source Leakage Current - - 500 pA Vos = 24V, Vss = 0V
- - 5.0 mA Vrys = 24V, Vss = ov, T: = 125°C
less Gate-to-Source Forward Leakage - - 100 n A Vss = 20V
Gate-to-Source Reverse Leakage -- -- -100 Vss = -20V
gfs Forward Transconductance 110 -- -- S Vos = 15V, ID = 50A
q, Total Gate Charge - 55 - nC l/ss = 10V, Vos = 15V, k, = 50A
ch Total Gate Charge - 26 39
0951 Pre-Vth Gate-to-Source Charge - 6.2 - l/os = 15V
0952 Post-Vth Gate-to-Source Charge - 4.0 - nC Ves = 4.5V
di Gate-to-Drain Charge - 7.9 - ID = 50A
ngdr Gate Charge Overdrive - 7.9 -
st Switch Charge (0952 + di) - 11.9 -
QDSS Output Charge - 19 - nC Vos = 16V, Vas = 0V
Re Gate Resistance - 1.9 - Q
tum", Turn-On Delay Time - 16 - VDD = 15V, Vss = 4.5V
t, Rise Time -- 30 -- ns ID = 50A
tum) Turn-Off Delay Time -- 2O -- RG=1.8Q
t, Fall Time - 12 -
Ciss Input Capacitance - 3635 - Ves = 0V
Cass Output Capacitance - 680 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 260 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy © _ 130 mJ
lan Avalanche Current C) _ 50 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - _ 100 MOSFET symbol D
(Body Diode) A 5howing the G
ISM Pulsed Source Current - _ 400 integral reverse
(Body Diode) OD p-n junction diode. S
VSD Diode Forward Voltage -- --. 0.65 V TJ = 25°C, Is = 5.0A, VGS = 0V ©
VSD Diode Forward Voltage -- -- 1.0 V To = 25°C, Is = 50A, VGS = 0V co
trr Reverse Recovery Time - 19 29 ns To = 25°C, IF = 50A, VDD = 15V
Qrr Reverse Recovery Charge - 28 42 " di/dt = 300A/ps ©
ton Forward Turn-On Time Time is dominated by parasitic Inductance
Thermal Resistance
Parameter Typ. Max. Units
ROJC (Bottom) Junction-to-Case © - 1.2
ch (Top) Junction-to-Case G) - 15 T/IN
RwA Junction-to-Ambient © _ 35
Ram (<10s) Junction-to-Ambient © --.- 22
© 2014 International Rectifier Submit Datasheet Feedback March 6, 2014
